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An investigation is made of the trade-off between fluence measurement accuracy and ion changeover time. Allowing users to select fluence measurement accuracy based on the type of testing being performed and time available.
Assessing electronic systems regarding ionizing radiation is often costly and requires complex facilities capable of generating the ionizing radiation, and highly qualified human resources to fulfill all the requirements for the radiation tests. This work proposes a fast and low-cost setup to evaluate soft errors on digital programmable systems owing to Single Event Effects caused by ionizing radiation...
Vulnerability of a variety of components for particle accelerators electronics to single event effects, total ionizing dose and displacement damage has been analyzed. The tested parts include analog, linear, digital, and hybrid devices.
This paper reports recent single-event latchup results for a variety of microelectronic devices that include an ADC, OpAmp, EEPROM, CPLD, PWM, transceiver, voltage regulator, digital signal processor, step-down converter, buck controller and supervisory circuits. The data were collected to evaluate these devices for possible use in NASA ISS payloads.
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latchup (SEL) protection circuitry.
Heavy ion and proton single event effects characterization data on BAE Systems RADNET 1848-PS Application Specific Standard Product are presented. The RADNET 1848-PS is a Serial RapidIO packet switch capable of running at rates up to 3.125 Gbaud. An at-speed SRIO network test for SEE cross section measurement is used to estimate soft error rates for observed upset modes in a reference orbit environment.
We describe heavy ion tests of RHBD configurations (varying guard timing, spacing, number of strings), including DICE, TAG4, TMR, I/O pads and a new 10T voting latch, to identify strategies for a portable nanoscale library. The TAG4, now off patent, provides superior performance to DICE. Large critical node separation requirements in bulk 65 nm are inferred. The new 10t voting latch performs as well...
Single-event effects and total ionizing-dose testing was performed on a flash NAND device. The results are presented here and the consequences for error correction architectures are analyzed taking into account the fact that beginning-of-life flash devices are susceptible to data corruption with no external stress applied. The analysis indicates that many typical error correction architectures may...
Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80 K to 350 K.
The major contribution to the Total Ionizing Dose (TID) damage to EEE components to be flown in the ESA JUICE mission to the Jovian system comes from the electron radiation belts of Jupiter and of its moons. However, standard testing of TID degradation of EEE components is performed with 60Co gammas. In this work the representativity of 60Co testing for the Jovian electron environment was tested by...
This work presents the measurements of single event transients and functional interrupts on two designs of readout integrated circuit under a heavy ions beam at cryogenic temperatures. The temperature dependence of the SEFI occurrence is limited.
Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are...
We report summary test results of commercially available GaN HEMT RF power devices from Cree and Qorvo, Inc., with 1.8 MeV protons in three operational modes. Tested parameters include threshold voltage, transconductance, and S-parameters representative of RF/power performance. Thermoelectric cooling was used to minimize thermally induced parametric shifts.
Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons — one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.
This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy of GaAs differs from that of Si. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature.
Experimental assessment of commercial 100/200 Gbps optical coherent DSP modem ASIC completed with 64 MeV and 480 MeV proton radiation test campaigns. Single event effect cross sections calculated and no performance degradation observed for proton fluence levels up to 1.27×1012 p/cm2 with equivalent total ionizing dose exposure to 170 krad(Si).
We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of displacement damage (DD) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors.
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