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Presents the introductory welcome message from the conference proceedings. May include the conference officers' congratulations to all involved with the conference event and publication of the proceedings record.
Assessing electronic systems regarding ionizing radiation is often costly and requires complex facilities capable of generating the ionizing radiation, and highly qualified human resources to fulfill all the requirements for the radiation tests. This work proposes a fast and low-cost setup to evaluate soft errors on digital programmable systems owing to Single Event Effects caused by ionizing radiation...
Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80 K to 350 K.
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latchup (SEL) protection circuitry.
Heavy-ion device effect cross-sections from irradiated MRAM Magnetic Tunnel Junctions are LET/atomic number, and not fluence, dominated, with distribution tails similar to thermally-accelerated resistance and magnetoresistance shifts that also depend physically on the tunnel barrier.
The Total Ionizing Dose and Single Event Effects test results of YHFT-DV, a 32-bit floating-point digital signal processor are reported in this paper. The result shows the DSP is well radiation hardened.
Total ionizing dose and single event effects testing was performed on 4 Gb NAND flash die used in DDC's 69F24G24 flash NAND devices. If the data is regularly refreshed, the devices show good resistance to corrupted bits during total dose irradiation. In the case of heavy ion irradiation, multi-bit upsets could prove problematic to some error correction schemes.
Neutron fields are created inside and outside the vault as byproducts of radioisotope production of the 70 MeV cyclotron at Zevacor Molecular Inc. Neutron energy distribution measurements were obtained for a 10 μΑ accelerator proton beam incident on a Rb/Ga target using the Nested Neutron Spectrometer. The neutron fluence rate at a 30 cm diameter conduit outside of the vault reached 3.95×104 cm−2...
Heavy ion latch-up test on Microchip microcontroller dsPIC30F6014A has been performed in order to analyze its suitability for ExoMars 2020 mission. The estimation of SEL rate shows the applicability of the microcontroller for non-critical functions.
The Northrop Grumman 4558 Analog Processor / Analog-to-Digital Converter was evaluated for tolerance to ionizing radiation at moderate doses. Radiation-induced shifts in non-linearity, noise, gain, offset and power dissipation are inferred from the transfer characteristics. Neither irradiation nor post-irradiation anneal has a measurable effect on the performance parameters. The radiation hardness...
The SEE, TID, and SET effects of the LMH5401-SP, industry leading fully differential amplifier, are presented. No latch up events were observed up to an LET of 85 MeV.cm2/mg at 125 C.
This paper examines the single-event upset response of a customer memory interface design on the Xilinx 20nm XCKU040 Field Programmable Gate Array (FPGA) irradiated with 64MeV proton source. Results for single-event upsets on configuration RAM (CRAM) cells are provided. The difference between architectural vulnerability factor (AVF) and design vulnerability factor (DVF) of the customer memory interface...
Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Zynq UltraScale+ MPSOC are presented. Upset rates in the space radiation environment are estimated.
Vroton induced SEU cross-section of DSP cores within the KeyStone™ II system-on-chip 66AK2L06 is presented. Upset rates in the space radiation environment are estimated.
A new version of the CLARO8 ASIC has been designed in AMS 0.35 μm CMOS technology, based on radiation hardened by design cells, and extensively tested. Results on the complete radiation hardness characterization are presented.
The effect of post irradiation annealing on the following radiation degradation rate of bipolar integrated circuit parameters was estimated. The degradation rate increases significantly during the irradiation in comparison with the irradiation before the annealing.
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