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Presents the introductory welcome message from the conference proceedings. May include the conference officers' congratulations to all involved with the conference event and publication of the proceedings record.
The ever-shrinking world of semiconductors has always challenged the interplay of tool capability, process integration, and characterization. The fine line between structural or electrical success and failure has steadily been redefined from microns to nanometers with leading edge technology using terms with the likes of angstroms and layers of atoms. Failure modes at these nodes become increasing...
Copper voids are critical defect issues in the metal lines. Massive voids cause functional fails and the smaller ones that do not cause any function fails carry high risk of failing later in life. They are threats to product lifetimes. In this work, we discuss a process for dual damascene copper for metal lines capable of causing surface voids.
For metal pitches below 50nm, triple patterning (LELELE) integration is utilized in most advanced technologies to build the Cu interconnect. This integration relies on etch to shrink to the target critical dimension. As a result of high iso-dense bias in conventional etch process, nested serpentine structures formed by different metal colors show massive shorts that limit defect density yield. In...
Power and Advanced BiCMOS technologies use deep trench architecture to reduce capacitance and leakages that are enhanced by high electric fields and high current applications. In this paper, a power and an advanced BiCMOS technology with deep trench architectures used micro Raman spectroscopy to identify non-uniform stress regions in the circuit. Using this information, architectural changes were...
Electroplating for the sub-50 nm pitch back-end-of-line (BEOL) interconnect metallization has become increasingly challenging mostly because of marginal seed coverage, inadequate plating process and/or chemistry, the limitation of scaling the barrier-liner and seed thickness. In this study we show how inadequate plating due to the marginal seed caused degraded via open yield along the perimeter of...
Manufacturing process control of porous SiOC:H low-k dielectrics is challenging due to their hybrid nature and process damage vulnerability. We discuss advanced optical modeling of various low-k dielectrics that allows one to reflect their material properties and improves accuracy and precision of scatterometry models widely utilized in manufacturing process control. Furthermore, we explore usage...
As chip makers move to advanced nodes and device geometries shrink, design and production costs have risen rapidly. As a result, it has become increasingly critical to reduce costs in established technology nodes by increasing device yield. For a given process, differences in individual process chambers can lead to process variations that may have a large impact on both overlay control and yield management...
We discuss utilization of TMU (Total Measurement Uncertainty) analysis based on Mandel Regression for scatterometry model referencing. We demonstrate practical instances where the reference metrology uncertainty seems to exceed that of the scatterometry model which, in turn, forces the TMU analysis into an invalid regime. Knowing that the source of this result is the wrong estimation of the reference...
In this paper we will demonstrate a systematic approach for controlling the inputs around a measurement process which has been applied at GLOBALFOUNDRIES Fab 8. The approach covers a wide range of topics which are each individually known but not uniformly applied across the industry. We will discuss the various manufacturing control factors involved around performing a measurement, which can be considered...
Epitaxially grown SiGe and Ge layers on Si <100> substrate have been analyzed by terahertz multispectral reconstructive 3D imaging technique. In particular, 3D images of both samples were generated via a non-contact and no-destructive route and were analyzed by utilizing the terahertz reconstructive imaging algorithm. It was found that the algorithm of “gridding with inverse distance to power...
Generation of particle defects in semiconductor manufacturing is inevitable, but it has to be minimized for high IC yield. There are various causes for the generation of particle defects, depending upon semiconductor manufacturing processes. This work discusses various strategies, such as clean on go, idle paste, kit hardware selection that help to reduce the generation of defects in metal thin films...
Methods for detecting contamination with native transistor probes are reviewed. This review is based on experience which was accumulated during development of multilevel epitaxial (EPI) high voltage DMOS process technologies including Deep Trench Isolation (DTI) with isolation capabilities up to and above 100V. Potential contamination sources, mechanisms and characterization are critically discussed...
This paper shows results from condensation particle counter for typical H14 & U15 filtration media (>99.995%, resp. >99.9995% efficiency at most penetrating particle size (MPPS)) using different raw materials and designs, down to 20 nm particle sizes. We demonstrate that glass fiber (GF) materials display very high nanoparticle removal efficiency compared to commercially available polytetrafluoroethylene...
Aluminium-copper (Al-Cu) interconnect corrosion can be observed in some integrated circuit technologies processed through dry metal etch using chlorine (Cl) gas followed by wet polymer clean and wet particle removal steps. Corrosion onset after metal each, wet polymer clean and wet particle removal were investigated respectively. For each steps, 3 major tests were used to induce corrosion: (a) environment...
Advanced electronic materials called precursor molecules are designed for the deposition of thin films that are expected to be reliable, contamination free and pristine. Deleterious effects of metallic contamination have been demonstrated in dielectric properties of thermal oxides grown on silicon [1]. In order to achieve ultra-high purity products, essentially free from trace metals (TM) and organic...
On the way to full production control, wire bonding equipment requires data-driven condition-based maintenance of the mechanical setup. In this paper, we identify aspects of regular mechanical equipment setups that severely affect bonding quality and equipment health in mass production. We show that mechanical equipment setups lower process stability in aluminum wire bonding. Typical faults in mechanical...
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