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The physical principle of redox based resistive switching memory cells is based on ionic and electronic transport propertips. Both normally reveal a strong temperature dependence. A novel heating setup enables to study the influence of high temperatures on the switching mechanism of these memories. It consists of a 100 nm-wide Pt heating line and includes a Pt/Ta2O5/Ta-based ReRAM cell. It is heated...
Resistive Random Access Memory (RRAM) can be regarded as a promising candidate on the manipulation of both electrical and magnetic properties. There is a widespread concern about the electrical manipulation of magnetic properties in RRAM devices. In our work, Co/HfO2/Pt RRAM device with magnetic conductive filament (CF) is designed and fabricated. Then the anisotropic magnetoresistance (AMR) effect...
We report high multilevel resistive switching in forming free resistive random access memory (RRAM) using Ti (4 nm) as top electrode. We demonstrate that at least six-level resistance states could be obtained by modifying the amplitude of the voltage pulse applied on the memory cell or the compliance current, exhibiting excellent resistance uniformity and retention capability. The resistive switching...
A TiN/SiOx/Pt structure was fabricated at room temperature and its resistive switching behaviors were investigated. The device demonstrated a bipolar resistive switching behavior, good stability and excellent scalability. The size effect of resistance and the resistive memory behavior can be explained based on conducting filaments (CFs) composed of oxygen vacancies. The resistive switching behavior...
This paper describes the synthesis of micro-thick hafnium-oxide (∼ 60 μm) memristors using a low-cost sol-gel drop-coating technique, and emphasizes on key parameters to be considered in the development of the microscale technology. The impact of electrode material on the device I-V electrical behavior is screened with the use of different metals, with different work-functions and oxygen affinities...
This paper explores the impact of high power factor (HPF) on the life of self-ballasted lamps or commonly referred as CFLs. In HPF CFLs the lamp current crest factor is usually very high. From the research work done so far it is well understood that the high current crest factor is detrimental for the life of lamp electrodes. The work done in this paper provides information about the filament current...
We report novel nanoscale synapse and neuron devices for ultra-high density neuromorphic system. By adopting a Mo electrode, the redox reaction at Mo/Pr0.7Ca0.3MnO3 (PCMO) interface was controlled which in turn significantly improve synapse characteristics such as switching uniformity, disturbance, retention and multi-level data storage under identical pulse condition. Furthermore, The NbO2 based...
Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial...
Resistive switching device consisting of metallic oxide layer sandwiched by the metallic electrodes has paid considerable attention to next-generation nano-electronic devices. Two major mechanisms; filament-type and interface-type, are known for the transition between the low-resistive and high-resistive states. In both mechanism, the low voltage operation is the common issue for the reliable and...
This work aims to reveal the underlying effect of improved power factor on the life of Self Ballasted Fluorescent Lamps commonly termed as CFL. In the third world country like India because of cost effectiveness CFLs are still used without any power factor correction circuitry. Recently the power factor improvement tool is made compulsive for CFL and the recommended range as suggested by IEC 61000-3-2...
TiN/HfOx/TiN resistive RAM (RRAM) devices have been fabricated where the hafnium oxide layer has been deposited at three different temperatures via atomic layer deposition (ALD). Material characterization shows the structure of the hafnium oxide is converted from cubic to monoclinic for 400 degrees C. Elemental analysis shows that the temperature affects the stoichiometric behavior of hafnium oxide,...
A thermal robust ReRAM (Resistive RAM) with a new method for suppressing read disturb was investigated. The switching property and ‘on’ resistance were scarcely varied by the operation temperature up to 200°C. Asymmetric structure such as Ru/TiO2/Ta2O5/TiO2/W showed ‘off’ switching only when a positive voltage was applied on the Ru electrode. The ‘reverse bias’ read operation, applying the positive...
The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching...
In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed...
Recently, in our lab we have performed some systemic studies on polarization fatigue in ferroelectric polymers and four possible contributing factors (applied voltages, operation temperature, film crystallinity and electrode structure) are characterized by a homemade sawyer-Tower circuit. All fatigue phenomena observed in these experiments seem to imply the effect of space charges, which are injected...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first...
A special round robin (RR) algorithm has been developed to equalize nickel metal hydride (NiMH) battery packs using a new selective equalizer. This algorithm detects batteries either at a very low state of charge (SOC) or at an extremely high SOC. In this system, a set of electromechanical relays are connected in a matrix to route boost current to the weaker batteries. The relay switching is controlled...
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