The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Unusual peaks in the transconductance gm(VGS) characteristics of n-channel UTBOX devices have been evidenced at 10 K and 77 K operation for an applied front gate voltage around 1.1 V while the back gate is grounded. The origin of this behavior was also addressed using additional low frequency noise (LFN) measurements. It is believed that the unusual peak may be related to a tunneling effect through...
In this paper a compact model for intrinsic capacitances for Tunnel field-effect transistors (TFETs) is presented. The model is derived from the carrier concentration and current flowing the channel of a Si Double-Gate (DG) n-type TFET. It represents a particularly good estimation of TFET capacitances and the flexibility of this model makes it possible to apply it for single-gate or p-type TFETs as...
The impact of strain on the electron mobility is investigated in ultra-thin InGaAs-OI channels by combining tight-binding bandstructure simulations, self-consistent Schrodinger-Poisson, and mobility simulations including all relevant scattering mechanisms. Our model shows that strain induced mobility improvement increases with body thickness downscaling, up to 164% in 4 nm-thick InGaAs channels in...
A novel method for surface charge sensing using the Ψ-MOSFET is presented. Systematic measurements of out-of-equilibrium body potential were performed on SOI wafers. The interest of Ψ-MOSFET as a biochemical sensor is experimentally proved. The advantages of this method are good sensitivity, simplicity and low-voltage reading compared to the conventional ID-VG method.
GaN/AlGaN/GaN based normally-off high electron mobility transistors (HEMTs) are promising candidates for future high-power as well as high-frequency applications. Here, a physics-based analytical model is presented to explain the effect of a thick GaN cap layer on the two-dimensional electron gas (2DEG) density at the AlGaN/GaN interface, and the surface barrier height in a AlGaN/GaN heterostructure...
The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI...
With the advent of Wireless Sensor Networks and the Internet of Things, the need for energy efficient components has increased significantly. Sensors consume sometimes a significant part of the energy budget of an autonomous system, while it is not always clear how to make them more efficient. Here we attempt to identify strategies for lowering power consumption in transducers. The discussion is constructed...
This work describes a statistical model for the C-V global variability of 28 nm FD-SOI using the sensitivities of the capacitance to each process parameter calculated using Leti-UTSOI compact model. The percentage contribution of each process parameter to the total C-V variation is explored to identify the dominant source of variation at different bias conditions. The proposed model provides an alternate...
Double barrier structure with silicon layer instead of metal can potentially enable variety of intriguing applications of such a structure. The observations so far have pointed out that behavior of such structures during high temperature process may depend on availability of oxygen. It can potentially influence the result of race for silicon atoms between recrystallization and oxidation processes...
In this work, DC and low frequency noise have been investigated in Gate-All-Around Nanowire MOSFETs at very low temperatures. Static characteristics at 4.2 K exhibit step-like effects that can be associated to energy subbands scattering. The mobility and subthreshold swing are also investigated. Finally the low frequency noise spectroscopy (from 10 K to 70 K) leads to the identification of silicon...
In this work, we have developed a near field scanning microwave microscopy method and applied it to study semiconductor samples. To do so, we have used a commercial Atomic Force Microscope (NT-NMDT Integra) to which we have coupled a half wavelength micro-strip line resonator and an Agilent N5242A PNA-X Network Analyzer. The AFM tip is connected at the edge of the microstrip which is connected to...
This paper presents Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields...
We review the results of silicon measurements, which we have performed on suboxide SiOx formed on n and p type Si wafers with different surface textures. Localized vibrational modes through Raman and FTIR, light emission properties by photoluminescence (PL), energy critical points for optical transitions, excited state dynamics and non-linear electrical properties can be used as effective methods...
In this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks 3 nm of HfO2 (with an EOT of 1 nm) or 2 nm of HfO2 (with an EOT of 0.8 nm). The use of an EOT of 0.8 nm increases the band-to-band tunneling generation and also improves the subthreshold...
This work presents the performance and transport characteristics of vertically stacked p-MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. Electrical characterization is performed for NWs with [110] and [100] channel orientations, as a function of both fin width (WFIN) and channel length (L). Results show a good electrostatic control and reduced short...
In this work we present a simulation study of Si80Ge20 and Silicon vertically stacked lateral nanowires transistors (NWTs) with potential application at 5nm CMOS technology node. Our simulation approach is based on careful selection of simulations techniques in order to capture the complexity of such ultra-scaled devices. We have used ensemble Monte Carlo (MC) simulations to accurately predict the...
A method for fabrication of VeSFETs, three-dimensional fin-type MOS transistors is presented. The VeSTIC process was developed and experimentally implemented in ITE. The test devics were manufactured, and their electrical characteristics were measured. Methods for extraction of a set of the VeSFET physical parameters are proposed based on the device compact model. The flat-band voltage, mobility and...
In this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. It is shown that the device achieves Ion/Ioff ratio of 5×104 considering Ion (Von= VIoff−0.5V) = 0.8×10−8 µA/µm and an average SS of 55mV/dec over two orders of magnitude of Id. Furthermore, the analog figures of merit have been calculated and show that the transconductance efficiency...
The ‘BOX creep’ technique consists in introducing stress in a SOI layer by taking advantage of the creep of the buried oxide enabled its low viscosity at high temperature. In this study, we deeply investigate the impact of the structure geometry and parameters on the efficiency of creep through mechanical simulations. We find that a 1.1GPa stress can be achieved for an active length of 400nm. This...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.