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This paper presents a low-offset comparator based on n-type amorphous indium gallium zinc oxide thin-film transistors (TFTs). An a-Si:H TFT model was adapted to fit the electrical characterization data obtained for these devices. The proposed comparator comprises three pre-amplification stages, a positive-feedback analog latch and a fully dynamic digital latch. Simulation results show that the proposed...
Simulator accuracy is an important, but seldom examined, part of study on 3D integration. This paper examines inaccurate technology parameters as a source of error for the CACTI and PRACTICS cache simulation tools. By replacing the default parameters with ones derived from information made available in the literature, CACTI simulation error for the 90 nm Itanium2 L3 cache is eliminated almost entirely...
Explicit continuous models for both double-gate (DG) and surrounding-gate (SG) MOSFETs are presented. These models evolve from previous DG and SG MOSFETs models, which need to solve implicit equations for intermediate parameters by numerical iteration or the table lookup method. By developing approximate explicit solutions for the intermediate parameters, we can express the drain current, terminal...
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