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Because of the extensive application prospect of flexible electronics, a capacitive humidity sensor fabricated on a flexible porous Polytetrafluoroethylene (PTFE) substrate is reported in this paper. Silver nanowires as a floating electrode were dispersed onto a PTFE substrate. Then, as humidity sensitive material, polyimide (PI) was spin-coated onto the silver nanowires. Finally, a pair of interdigitated...
This paper presents flexible ultraviolet (UV) photodetectors (PDs) based on zinc oxide (ZnO) nanowires (NWs) for wearable dosimetry. High-crystal quality ZnO NWs are synthesized by chemical vapour transport on sapphire substrates, and thereafter, they were transferred to flexible substrate and aligned using dielectrophoresis (DEP). The control over DEP parameters permits creating large-area arrays...
This work proposes a new method for the extraction of the flatband voltage, effective nanowire width and doping concentration of junctionless nanowire transistors. The accurate extraction of such parameters is essential for the understating of the device behavior and for the prediction of its performance in circuits through analytical models. The method is validated using 3D numerical simulations...
P-channel solution-processed organic thin film transistors based on a dual layer semiconducting network of polythiophene polymers and oriented germanium nanowires show a marked enhancement of up to five-fold in hole field effect mobility with respect to that of pristine polythiophene devices. The work presented here furthers our understanding of the interaction between polythiophene and oriented nanowires...
An analytical analysis of stress profile in cylindrical nanowires vertically grown on silicon (Si) substrate has been performed. Depending on the lattice-mismatch a tensile stress as high as 1GPa for TiO2 nanowires and a compressive stress of 900MPa for InP nanowires has been obtained. The angular component of stress remains small indicating the nanowires will not be twisted as a result of the substrate-induced...
The effect on the stress profile for more than one nanowire constituting a matrix has been analyzed. There from it has been made evident that substrate as well as process-induced stress, irrespective of its nature, within the basal plane of a single nanowire gets reduced in a cluster of closely packed nanowires.
ZnO nanowires have potential applications as large area field emitters for plat panel x-ray source and high emission current is needed for such application. In this study, patterned ZnO nanowires with different separations have been fabricated on ITO coated glass substrate by thermal oxidation technique. It is found that the separation of the patterns affects the growth of ZnO nanowires. The field...
In this study, we present an environmentally friendly and solution-based synthesis for copper nanowires (CuNWs) at a moderate process temperature. Transparent electrodes (TEs) are fabricated by spray-deposition and evaluated in terms of their electro-optical performance. Using ImageJ, the CuNW diameters are determined in an automated and reproducible way. Without any post-processing, the films show...
We present two novel SERS substrates which allow easily achievable sub-10 nm gaps — ‘Nanoparticles inside Nanolines’ and ‘Nanofingers inside Nanowires’. Theoretical studies based on Finite Difference Time Domain (FDTD) modelling as well as large-are fabrication methodologies for developing these substrates are discussed.
As beta-phase gallium oxide is gaining attention for potential application in electronic and optoelectronic devices, this paper addresses techniques for nanowire fabrication that offer the potential for low cost simplicity with the uniformity and reproducibility that are necessary for useful device implementation of these nanowires.
In this paper, we present our recent progress towards flexible nitride nanowire devices: we propose a method to combine high flexibility of polymer films with high quantum efficiency provided by nitride nanowires. The lift-off and transfer procedure allows to assemble free-standing layers of nanowire materials with different bandgaps without any constraint related to lattice-matching or growth condition...
Monolithically integrated light sources on silicon are key for future semiconductor microchips that comprise Si CMOS and on-chip optical interconnects as prerequisite for more energy efficient computers and data centres. Recently, major advances were achieved regarding direct integration of III-V gain material on silicon without introducing threading dislocations, especially via heteroepitaxy of semiconductor...
Inorganic nanomaterials such as nanowires (NWs) and nanotubes (NTs) are explored for future flexible electronics applications due to their attributes such as high aspect ratio, enhanced surface-to-volume ratio, prominent mobility and ability to integrate on non-conventional substrates. Device performance of semiconducting NWs are demonstrated to be superior compared to the organic counterparts. Among...
Cu-Cu thermocompression bonding is the most widely accepted bonding approach for realizing multilayer chip stacking in three dimensional integrated circuits. Recently new materials and structures such as one-dimensional metallic nanostructures have been extensively investigated for the application of Cu-Cu interconnection due to their superior electrical, thermal, and mechanical properties. Herein,...
In this work, nanowire forests are fabricated by using a plasma repolymerization technique. The fabrication process involves only spin-coating of polyimide and plasma bombardment of the polymer, the whole process is lithography-free, micromachining-compatible and extra simple. Besides, the nanowire forests can further be utilized as nanomasks in reactive ion etching for nanopillar-nanowire composite...
In this article, we present a camouflage sheet consisting of nanophotonic structures that can manage thermal signature of objects. Photonic structures that can absorb a wide range of mid-infrared wavelengths were transferred onto flexible substrates to cover objects and absorb their infrared radiations. Transmission and reflection of surface can be reduced by silicon nanowires in the desired region...
In this paper, nanowires of different diameters were assembled on the substrate by hydrodynamic focusing. Enveloped and positioned by the two sheath flows, the sample flow containing different nanowires were located to different lanes on the substrate, and thus different nanowires were assembled on the substrate. The hydrodynamic focusing approach is easy to control and economic.
Semiconductor nanostructures such as nanowires or nanosheets are extremely tolerant to lattice constant variation and thus allow alloy composition to vary over a large range within a single substrate or structure. We demonstrate multi-color lasing or even a white laser from a single alloy nanostructure.
In this work terahertz (THz) pulse emission of the non-vertically aligned GaAs core-shell nanowires (NWs) is investigated. THz emission azimuthal dependencies of different NW samples have been measured. It is shown that these measurements together with theoretical calculations could be a very promising method to determine the effective index of refraction (n0) of the NW ensemble. The measurement of...
Tunnel FETs (TFETs) with steep subthreshold slope have been attracting much attention as building blocks for future low-power integrated circuits and CMOS technology devices. Here we report on recent advances in vertical TFETs using III–V/Si heterojunctions. These heterojunctions, which are formed by direct integration of III–V nanowires (NWs) on Si, are promising tunnel junction for achieving steep...
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