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We fabricated a high performance electron beam for the vacuum electronic devices with carbon nanotube (CNT) cathode. For the vacuum electronic devices application, a structure of cold cathode should be highly adhere on cathode substrate and endure a resistive heating during electron emission. For fabrication of stable electron beam, we optimized the CNT emitters and the triode structure. The structural...
Self-propagating exothermic reaction of Al/Ni multilayer film has been developed as a heat source with small heat region and high reaction rate in the field of bonding. In this paper, using this kind of localized and rapid heat source, solder preforms with different melting point such as SAC305 (217°C), Au80Sn20 (278°C) and A88Ge12 (356°C) have been applied to achieve the Si/Si bonding includes stacked...
Effects of Ar beam irradiated during the surface-activated bonding process on n-Si and p-Si based Schottky barrier diodes (SBDs) were investigated by atomic force microscope measurements. Charges in the electrical characteristics of SBDs were attributed to the variation in Schottky barrier heights due to the Ar beam irradiation.
We successfully fabricated Al-foil/p-Si junctions by surface activated bonding (SAB). We found that the junctions revealed Schottky properties by measuring their current-voltage characteristics. We also found that the reverse-bias current of the junctions was decreased, i.e., their electrical characteristics were improved by annealing at temperatures below 200 °C. These results demonstrate that the...
A simple but effective common-mode noise suppression filter using cavity-backed defected ground structure (DGS) is proposed for the application of multilayer printed circuit board (PCB). This filter adds a substrate-filled metallic cavity beneath a conventional DGS. Due to the shielding effect of the cavity, the back-radiation of the DGS can be significantly reduced, while the filtering behavior of...
The Radio Frequency Micro-electromechanical system (RF MEMS) has compact geometries and are very used in Monolithic Microwave Integrate Circuit (MMIC) for different important applications with respect to their size and their effectiveness. Its effectiveness can be improved by reducing the ElectroMagnetic Interference EMI problem with better Electromagnetic compatibility EMC immunity of the component...
We investigated the electrical properties of highly-doped n-Si/n-Si and p-Si/p-Si junctions fabricated by using the surface activated bonding. Heights of potential barrier formed at the respective bonding interface were estimated by measuring dependence of their current-voltage characteristics on the ambient temperature. The heights of barrier were found to be varied due to annealing often the bonding...
The electrical properties of GaAs/GaAs junctions fabricated by using surface-activated bonding (SAB) were investigated. We extracted the potential barrier heights at 300-°C-annealed GaAs/GaAs interfaces from their current-voltage characteristics measured at varied ambient temperatures and estimated the energy of charge neutral level ECNL and the density of interface states Dit.
Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe itself...
In this work, InN nanowire photo detectors on a Si platform were investigated, and a light response up to 1.55 μm was observed at room temperature. InN nanowire light sources on Si are also discussed.
This paper reports a normally-off high voltage hybrid Al2O3/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al2O3/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer...
In this work, a thermally stable air-bridged matrix (ABM) AlGaN/GaN high electron mobility transistor (HEMT) with micromachined diamondlke carbon (DLC)/Titanium thermal-distributed layers was demonstrated. After removing the Si substrate beneath the HEMT, the DLC/Ti heat dissipation layers were deposited on the backside of the HEMT, and a significant breakdown voltage improvement was observed. The...
Effects of annealing on GaAs/Si bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. Using a cross sectional transmission electron microscope, an amorphous layer was observed at the interfaces of GaAs/Si junctions that had been fabricated by the surface active bonding method. The amorphous layer vanished after the annealing at 400 °C. We also investigated the effects of the...
This paper discusses the characteristics of the InSb/Si heterojunctions. Thin epitaxial layers of the InSb were grown on p-Si substrate by using the surface reconstruction controlled epitaxy. This epitaxial growth technique permits us to grow high quality InSb on Si (111) surface. The n-InSb/p-Si heterojunction pn diodes were fabricated with these samples, and characterized by current-voltage, and...
The effects of annealing on n-Si/n-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.
Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and the surface activated bonding. The SEM observation of their cross section indicated that the height of the mesa was approximately 13 μm. Their capacitance-voltage and current-voltage characteristics were also measured.
InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.
Hydrogenation of Si(110) surface due to hydrogen plasma was investigated, using in-situ infrared spectroscopy in multiple internal reflection geometry (in-situ MIR-IRAS). The amorhpous layer was formed. Especially, the SiH2 components were finally formed in the amorphous layer. The formation of the SiH2 is performed with 0.5-order reaction, in a comparion with the hydrogen exposure time. It is suggested...
The fabrication technology and characterization of PTCDA/p-Si photo-electronic detectors are studied in this paper. The results indicate that Al, in comparison to Au, is preferably suitable for use as the cathode materials of the PTCDA/p-Si photo-electronic detectors. It is also found that the performance of the detectors depends very strongly on the purity of PTCDA. The higher purity of the PTCDA...
Analog IP cores exhibit a multivariate response to dynamic variations of an operation environment, that are typically represented by power and substrate voltage changes. A testbench provides a silicon area to embed and diagnose custom IP cores with power delivery and substrate networks, where the area is surrounded by on-chip precision waveform capturing and configurable power and substrate noise...
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