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In the IS discipline, the formulation of design principles is an important vehicle to convey design knowledge that contributes beyond instantiations applicable in a limited context of use. However, their formulation still varies in terms of orientation, clarity, and precision. In this paper, we focus on the design of artifacts that are oriented towards human use, and we identify and analyze three...
The threshold switching characteristics of amorphous NbOx thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to...
This work presents a novel 30 nm n-channel Silicon Germanium-on-Insulator (SGOI) based Tunnel Field Effect transistor with asymmetric source/drain material using Non-Local Band-to-Band tunneling model, where we have observed the better switching characteristic. This work also shows that the Miller capacitance is very small using Non-Local BTBT model with bandgap lowering. We also observed the effect...
In the most industrial processes, weighing machines are designed to automatically fill one or more types of the containers with a predetermined weight of particulates raw material using a controller. The performance of the machine is closely related to the accuracy of measurement and speed of dynamic response, which are contradictory. For a gravimetric filling machine, a novel adaptive dynamic state...
We report our experiences of attempting to configure a single-walled carbon nanotube (SWCNT) / polymer composite material deposited on a micro-electrode array to carry out two classification tasks based on data sets from University of California, Irvine (UCI)[1]. The tasks are attempted using hybrid “in materio” computation: a technique that uses machine search to configure materials for computation...
The mechanism for the streamer-to-leader transition of a positive surface discharge in atmospheric air was studied from the viewpoint of gas heating in a discharge channel. In the experiment, a quartz glass having a conductive indium tin oxide (ITO) coated back-surface was used as an insulation material having a back electrode. The gas temperature change of an impulse surface discharge ranging from...
Silver tungsten carbide (AgWC) contacts are often applied to circuit breaker applications due to their good arcing erosion properties. The low material loss is beneficial for repeatable high interruption capacity. This paper characterizes the influences of contact material microstructure and sintering agents on the switching properties of AgWC40 material. A detailed description of the microstructure...
Break operations of a DC inductive (L=20mH) current from about 1A to about SA at 14V were conducted with Ag and AgSnO2 contact pairs under different contact opening speeds from 0.5 to 200mm/s in air. Average break arc duration at each current level was calculated under the respective opening speeds. With the small load current levels, the average break arc durations were not influenced by the contact...
Main goal of this research is to design and fabricate an exoskeleton type assistive device for polymyositis patients, which is extremely compact, lightweight and also comfortable. In order to achieve this goal, the target motion of the device is focused on eating motion which is one of the most important task of daily life. Also, the exoskeleton is designed with soft materials such as fabric, rubber,...
This paper presents SPICE modeling of Phase-change Random Access Memory (PCRAM). Different models of PCRAM have been already proposed but those models still lack capability to exactly model the behavior of PCRAM. In this paper we have introduced various physical parameters in the programming, to accurately model PCRAM behavior. The modeling of PCRAM cell has been done in Verilog-A and simulation results...
Resistance uniformities of Au/TiO2/Au memristors with oxide layer of 20-nm-thick, 30-nm-thick and 40-nm-thick have been study respectively. For each device, uniformity of high resistances is much higher than that of low resistances in cycles, no matter how thickness the oxide layer is. It indicates that conductive filaments based on oxygen vacancies are the dominated effect on resistive switching...
Public lighting's primary purpose is nighttime visibility for security and safety. How to meet so many requirements of so many stakeholders? The key to developing a good plan is to relate lighting to functions of public spaces, because street lighting is more than a technical requirement, a security need, or a design element. It can be thought of and utilized in terms of how the type, placement, and...
Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performance of physical TiO2 and TaO2 nonvolatile memristive devices were compared in terms of switching speed, retention and endurance. TaO2 memristive devices have shown better endurance (108 times more switching cycles) and...
Nanoscale resistive switching devices are nowadays widely employed in applications of storage, logic and computing. The switching mechanism of metal oxide based devices is normally assumed to be the filamentary formation and rupture within the devices' active cores but the origin of filaments growth is still controversial. Previous research has already demonstrated that initial filamentary states...
We engineer a scalable and CMOS-friendly RRAM stack using down to 3nm ALD-based Ta2O5. The 20nm-sized TiN\Ta2O5\Ta device operated at 50µA exhibits ultra-fast write (∲5ns) at moderate voltage (<2V) with >109 write endurance. We also demonstrate excellent disturb and retention characteristics, which we relate to the appropriate tuning of the oxygen chemical-potential profile along the filament...
In this paper, 5Xnm cross point cell array for the low power ReRAM operation was developed with 1S1R cell structure. Through the optimization of both TiOx/TaOx based-1R and NbO2 based-1S stacks with TiN based-electrode, the world's first and best bipolar switching characteristics with the lowest operation current (20∼50uA) and sneak current (∼1uA) level were acquired.
Hybrid memory systems that incorporate Storage Class Memory (SCM) as non-volatile cache or DRAM data backup are expected to bolster system efficiency and cost because SCM promises higher density than DRAM cache and higher speed than the storage I/F. This paper demonstrates a Cu-based resistive random access memory (ReRAM) cell that meets the SCM performance specifications for a 16Gb ReRAM with 200MB/s...
Stray inductance of the DC bus in switching power converters causes transient overvoltages across the power devices, creating a need for higher rated, more costly switches. Moreover, EMI filters become necessary to mitigate the high frequency noise generated by the inductive loop of the busbar. In automotive applications, due to low cost and improved power density requirements, low inductance busbars...
Aostract is ReRAM mereasmgiy being developed for applications that require higher speeds and lower voltages than flash memory. We have found TaOx to have high performance and high reliability. However one of the phenomena observed in ReRAM is that each resistance after Set and Reset varies during every cycle. To stabilize resistive switching, the key is to limit these variations in resistance. In...
Effects of AlOx interfacial layer in the W/AlOx/TaOx/TiN structures have been investigated for the first time. This RRAM device shows long endurance of 106 cycles and good retention at 85°C for a low current compliance of 100 μA. A physics based simulation is studied to understand the set and reset mechanism of RRAM. The nature of ions migration, potential profile and temperature of filament during...
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