Search results for: Chun-Min Zhang

Items from 1 to 14 out of 14 results

article

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Farzan Jazaeri, Chun-Min Zhang, Alessandro Pezzotta, Christian Enz

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 85 - 94

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations of both oxide and Si/oxide interface trapping. This charge-based approach represents an essential step toward compact modeling of ionizing dose and...

article

A grey artificial bee colony algorithm

Wan-li Xiang, Yin-zhen Li, Xue-lei Meng, Chun-min Zhang, more

Applied Soft Computing > 2017 > 60 > C > 1-17

Artificial bee colony (ABC) algorithm is a very popular population-based algorithm. Unfortunately, there exists a shortcoming of slow convergence rate, which partly results from random choices of neighbor individuals regarding its solution search equation. A novel scheme for the choice of neighbors is introduced based on grey relational degrees between a current individual and its neighbors to overcome...

article

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Chun-Min Zhang, Farzan Jazaeri, Alessandro Pezzotta, Claudio Bruschini, more

IEEE Transactions on Nuclear Science > 2017 > 64 > 10 > 2639 - 2647

This paper investigates the radiation tolerance of 28-nm bulk

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and

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MOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex interplay of oxide and interface charge trapping relevant to the gate-related dielectrics and the shallow trench isolation. The narrowest/longest...

article

Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory Cell

Xi Lin, Xiao-Yong Liu, Chun-Min Zhang, Lei Liu, more

IEEE Transactions on Electron Devices > 2015 > 62 > 4 > 1177 - 1183

A semifloating-gate transistor had been proposed and its memory function has been demonstrated recently. In this paper, we further investigate its temperature dependency, device scalability, and device modeling. The high-temperature behavior is studied by measuring its endurance, retention, and disturbance immunity at 85 °C. The device scalability down to the 14-nm technology node is investigated...

chapter

Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)₂ and O2 plasma

Hao-Xiang Zhang, Chun-Min Zhang, Peng-Fei Wang

2015 China Semiconductor Technology International Conference > 1 - 3

2015 China Semiconductor Technology International Conference (CSTIC)

Ruthenium dioxide (RuO₂) thin films can be used as the electrode material for future technology nodes. In this work, atomic layer deposition (ALD) was used to deposit thin films of RuO₂ on SiO₂ using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp)₂] as the precursor and oxygen (O₂) plasma as the reducing agent. The thermal stability of the deposited films were investigated in the N₂ ambient and in...

article

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

Xiao-Yong Liu, Sheng-Xun Zhao, Lin-Qing Zhang, Hong-Fan Huang, more

Nanoscale Research Letters > 2015 > 10 > 1 > 1-6

Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented...

chapter

Investigation of spin-on-dopant for fabricating high on-current tunneling field effect transistor

Wei-Chao Zhou, Xi Lin, Xiao-Yong Liu, Xiang-Ming Xu, more

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) > 1 - 3

2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

Spin-on-dopant and rapid thermal diffusion are used as the doping method for fabricating planar tunneling field effect transistor (TFET) in this paper to acquire abrupt doping profile and high surface doping concentration. Due to the heavy surface doping the on-current of TFET is enhanced. The ambipolar characteristics of TFET are also inhibited by reducing the drain doping concentration.

article

Design of U-Shape Channel Tunnel FETs With SiGe Source Regions

Wei Wang, Peng-Fei Wang, Chun-Min Zhang, Xi Lin, more

IEEE Transactions on Electron Devices > 2014 > 61 > 1 > 193 - 197

In this brief, a novel U-shape-channel tunneling field-effect transistor (UTFET) with a SiGe source region is investigated by 2-D technology computer aided design simulation. The enlarged tunneling area and enhanced tunneling rate dramatically increase the tunneling current when the device is turned on. Meanwhile, the off-leakage current of UTFET is suppressed because of the extended physical channel...

article

Role of Fas/FasL Pathway-mediated Alveolar Macrophages Releasing Inflammatory Cytokines in Human Silicosis

San Qiao YAO, Qin Cheng HE, Ju Xiang YUAN, Jie CHEN, more

Biomedical and Environmental Sciences > 2013 > 26 > 11 > 930-933

chapter

PEALD Ru/RuO_x films for ULSI applications and its transition control between metal and metal oxide

Chun-Min Zhang, Qing-Qing Sun, Peng-Fei Wang, David Wei Zhang

2013 IEEE 10th International Conference on ASIC > 1 - 4

2013 IEEE 10th International Conference on ASIC (ASICON 2013)

Ruthenium (Ru) is a promising material for the future backend of line of semiconductor technologies beyond 20 nm. In this work, high quality Ru and ruthenium oxide (RuO_x) thin films were grown on SiO₂ substrates by plasma-enhanced atomic layer deposition (PEALD) technique using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp)₂] as the precursor and oxygen (O₂) plasma as the reducing agent. The impacts...

article

Transmission ratio of the Glan–Taylor prism with deviated optical axes in the static polarization interference imaging spectrometer

Chun-min Zhang, Xin Bai, Chun-yuan Jing, Hai-ying Wu

Optik - International Journal for Light and Electron Optics > 2011 > 122 > 19 > 1770-1775

Glan–Taylor prism is the key component of the static polarization interference imaging spectrometer. In this paper, we consider the case that optical axes of the Glan–Taylor prism have departure angles from their ideal directions that in the principal section, however principal section varies with optical axes. Ray tracing method is employed to detailedly present the light trails in the birefringent...

article

Fas/FasL pathway-mediated alveolar macrophage apoptosis involved in human silicosis

San-qiao Yao, Liying Wang Rojanasakul, Zhi-yuan Chen, Ying-jun Xu, more

Apoptosis > 2011 > 16 > 12 > 1195-1204

In vitro and in vivo studies have demonstrated that lung cell apoptosis is associated with lung fibrosis; however the relationship between apoptosis of alveolar macrophages (AMs) and human silicosis has not been addressed. In the present study, AM apoptosis was determined in whole-lung lavage fluid from 48 male silicosis patients, 13 male observers, and 13 male healthy volunteers. The relationships...

chapter

Analysis of over-speed coupling accidents on hump based on fuzzy Petri Net

Chun-min Zhang, Yin-zhen Li

2010 IEEE 17Th International Conference on Industrial Engineering and Engineering Management > 1014 - 1018

2010 IEEE 17th International Conference on Industrial Engineering and Engineering Management (IE&EM2010)

The over-speed coupling on hump could lead to some serious accidents, such as the damage of cars and the shift of fastening freight, which could affect the security of shunting operation. According to uncertainty and fuzziness of the accidents' factors, their cause-and-effect relationship is analyzed and fuzzy Petri Net model is established by transferring a fuzzy Fault Tree into a fuzzy Petri Net,...

article

The coefficients of reflection and refraction on interface of the crystals in the Savart polariscope

Jun-Fang Wu, Chun-Min Zhang

Optik - International Journal for Light and Electron Optics > 2010 > 121 > 20 > 1835-1839

According to the boundary conditions of the electromagnetic field, the coefficients of reflection and refraction on the interface of crystal in the Savart polariscope are obtained for ordinary ray (o-ray) and extraordinary ray (e-ray).The coefficients of reflection and refraction are different from an isotropic medium and have more complicated forms than isotropic medium.

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