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Spurred by the knowledge of isolation of graphene, other 2D transition-metal dichalcogenide materials in the form of MX2 (where M=transition metal such as Mo, W, Ti, Nb, etc. and X=S, Se, or Te) have drawn considerable attention. The MX2 family material consists of one or more sets of triple layers with one M and two X in a sandwich structure (X-M-X). Atoms within each layer are strongly held together...
The AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are suitable for discrete components in many high power and high frequency power electronics applications useful for communications, satellites, power amplifiers, inverters/converters for electric and/or hybrid vehicles. Presently, these devices are commonly grown on sapphire, silicon carbide, and recently on 100- to 200-mm diameter silicon...
In this work, we have studied GNM as both FET channel and contact material. We find that the FET performance in terms of on-off ratios is always improved with GNM patterning, due to the modified scattering in the GNM channel and improved channel coupling in the GNM contact case. In particular, our findings suggest that a novel graphene based device using an FLG channel with GNM contacts is able to...
We propose a device model for neuron based on lateral spin valve (LSV) that constitutes of multiple input magnets, connected to an output magnet, using metal channels. The low-resistance, magneto-metallic neuron can operate at a small terminal voltage of ∼20mV, while performing computation upon current-mode inputs. The spin-based neurons can be integrated with CMOS to realize ultra low-power data...
We have demonstrated the first InGaAs MOSFETs with sub-nm EOT featuring a gate-first implant-free process compatible with VLSI. At LG = 65 nm, these devices are among the best reported ones in terms of electrostatic integrity but they suffer from a large access resistance related to a large gate-to-source/drain spacing. Future work will focus on scaling this spacing in the 5 nm range in order to achieve...
For even basic sensing and energy-harvesting functions, large-area systems-on-plastic require digital oscillators as a key circuit block [1]. However, their use to generate control signals, or drive actuator/energy-harvesting circuits requires different performance metrics compared to conventional digital circuits. In this abstract we (1) propose a figure of merit for these applications and (2) show...
Management of process variation and random fluctuation is one of severe challenges in scaling down silicon-based devices continuously according to Moore's law. Emerging fluctuation sources [1‒3] consists of the most critical random dopant fluctuation (RDF) which degrade device characteristic significantly. Unfortunately, recent studies on RDDs were reported for SOI FinFETs [1,5,8]. In this work, we...
We have begun to explore the possibility of thin film three dimensional (3D) topological insulator (TI) based tunnel FETs (TFETs), specifically Bi2Se3 here, using quantum ballistic transport simulations with a tight-binding Hamiltonian in the atomic orbital basis including spin degrees of freedom. TI-based TFETs would be analogous in some ways to graphene nanoribbon TFETs, but without the sensitivity...
We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's...
Independently-driven tri-gate graphene nanoribbon transistors were implemented by CMOS-compatible double-self-aligned spacer lithography, which effectively suppresses the line edge roughness and width variation. The consistent electrical characteristics show bandgap modulation with transverse electrical fields and ambipolar conduction with perpendicular fields in graphene film.
Designing THz detectors that operate at room temperature is highly desirable and challenging for practical applications, such as imaging and quality control. Since the THz photon energy is very close to the thermal excitation, the room temperature operation is very restricted in conventional devices. In contrast, the topological insulators (TIs), e.g. Bi2Se3, pave a way to a new paradigm in low energy...
We report, for the first time, an ultra high gauge factor of more than 3500 observed using AlGaN/GaN Heterostructure Field Effect Transistor (HFET) embedded GaN piezoresistive microcantilever. In addition, the deflection transduction signal from the HFET was utilized to determine dynamic bending as well as AC frequency response of the cantilever. Finally, the piezoresistive microcantilver was used...
Domain wall (DW) motion devices attracts much interest with their prospective logic and memory applications[1][2]. Present on-chip DW manipulations by a magnetic field of electric currents or electron spin torque raise the problem of high Ohmic energy losses. We show that such a difficulty can be avoided by applying an exchange field Heff to the magnetic layer from the proximate graphene (Gr), instead...
Schottky diodes can play a valuable role as rectifiers in Large-Area Electronics (LAE) systems and circuits. They can be used to recover a DC signal when an AC carrier is used to transmit signals between adjacent plastic electronic sheets through near-field wireless coupling [1], rectify DC power after AC transmission between sheets to provide power to sensors, and so forth. In this paper we describe:...
To summarize, we propose that quasi-saturation in short-channel GFET output characteristics can be effectively engineered by doping in the drain-underlap region and show using self-consistent NEGF simulations that a ∼0.2% p-type doping can enhance output resistance by 13× and intrinsic gain by 4× in 20 nm gate-length GFETs
We review our efforts on using numerical simulations to study essential physics of dissipative quantum transport in nanoscale field-effect transistors (FETs). Three types of nanoscale transistors are modeled as examples, (i) graphene nanoribbon (GNR) FETs with a quasi-one-dimensional (1D) channel, (ii) graphene FETs with a two-dimensional channel, and (iii) tunneling FETs with a strained GNR channel...
Resistive random access memories (ReRAM), also referred to as memristors, have gained a great deal of attention recently as a potential high density, low energy replacement for flash and DRAM. Furthermore, the analog properties of this device are a potential enabler of neuromorphic computing. Of particular interest are the class of ReRAM based on based on the valence change mechanism and fabricated...
We have computed the dispersion and scattering rates for the IPP modes. Compared to the uncoupled SPP modes, their scattering rates are significantly lower as a result of dynamic screening which emerges from the plasmon-SPP coupling. At small/large Q, dynamic screening enhances/weakens electron-phonon interaction. Despite being a high-κ oxide, HfO2 seems to show the most promise in terms of IPP scattering...
Electrical detection of biomolecules using Field-Effect-Transistors (FETs) [1–5] is very attractive, since it is label-free, inexpensive, allows scalability and on-chip integration of both sensor and measurement systems. Nanostructured FETs, especially nanowires have gained special importance due to their high electrostatic control and large surface-to-volume ratio. In order to configure the FET as...
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