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Recently, III–V gate-all-around (GAA) nanowire MOSFETs or III–V 3D transistors have been experimentally demonstrated by a top-down approach [1–2], showing excellent scalability down to channel length (Lch) of 50nm. Although parallel integration of the InGaAs nanowires have been successfully demonstrated in Ref. [1] delivering high drive current per wire, the overall current drivability of the devices...
We demonstrate the first implementation of a highly doped silicon nanowire electromechanical resonator that exploits the depletion charge modulation in a junctionless FET to transduce mechanical motion on-chip. The resonator, with a typical length between 1 and 2 µm, a total height of 44 nm and a total width of 65 nm, is coupled via two lateral 60 nm air-gap gate electrodes. A fundamental resonance...
Although recent years have seen impressive progress on high speed GaN HEMTs [1–3], fabrication approaches allowing for monolithic integration of E and D-mode devices with simplicity and low-cost, such as gate recess and plasma treatment, remain challenging. Carrier mobility in channels subject to gate recess or plasma treatment generally degrades, which is difficult to fully recover even after post-processing...
We report the first direct measurement of the Dirac point, the Fermi level, and the work function of single layer gapless graphene by using photoemission threshold spectroscopy. Since the pioneering work of Novoselov et al in 2004, [1] graphene has attracted an immense amount of interest from all disciplines. [2] The knowledge of the physics of graphene-based devices has grown dramatically. Along...
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original...
The CMOS device technology used for computation is at an inflexion point. Although this is the technology which enabled the Semiconductor industry to make vast progress for the past 30-plus years, it is likely to see challenges going beyond the ten year horizon, particularly with regard to device scaling and energy efficiency. Thus it is extremely important for the semiconductor industry to search...
Biomolecular systems are traditionally studied using ensemble measurements and fluorescence-based detection. Among the most common in vitro applications are DNA microarrays to identify target gene expression profiles [1] and enzyme-linked immunosorbent assays (ELISA) to identify proteins [2]. While much can be determined with ensemble measurements, scientific and technological interest is rapidly...
The performance requirements of defense systems to detect small signals in the presence of clutter or large interferers, to see further than the adversary, and discriminate between targets in a complex environment, has driven the need for ever more capable device technologies for focal plane arrays (FPAs) and monolithic microwave integrated circuits (MMICs). This paper discusses the history, and current...
In this paper, we will present some possible emerging applications for Nano-Electro-Mechanical Systems (NEMS) and the interest of their co-integration with CMOS. We will compare some integration schemes and present mass sensing as a possible emerging application. In particular, experimental results on complex gas measurements with NEMS will be introduced. We will show that multi-physics simulations...
Opto-mechanical systems offer one of the most sensitive methods for detecting mechanical motion using shifts in the optical resonance frequency of the optomechanical resonator. Presently, these systems are used for measuring mechanical thermal noise displacement or mechanical motion actuated by optical forces. Meanwhile, electrostatic capacitive actuation and detection is the main transduction scheme...
We report, for the first time, an ultra high gauge factor of more than 3500 observed using AlGaN/GaN Heterostructure Field Effect Transistor (HFET) embedded GaN piezoresistive microcantilever. In addition, the deflection transduction signal from the HFET was utilized to determine dynamic bending as well as AC frequency response of the cantilever. Finally, the piezoresistive microcantilver was used...
Energy consumption in our society is increasing rapidly. A significant fraction of the energy is lost in the form of heat. In this talk we introduce thermoelectric devices that allow direct conversion of heat into electricity. A key requirement to improve the efficiency is to increase the Seebeck coefficient (S) and the electrical conductivity (σ) while reducing the electronic and lattice contributions...
Piezoelectricity, a phenomenon known for centuries, is an effect that is about the production of electrical potential in a substance as the pressure on it changes. The most well known material that has piezoelectric effect is the provskite structured Pb(Zr, Ti)O3 (PZT), which has found huge applications in electromechanical sensors, actuators and energy generators. But PZT is an electric insulator...
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