The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Nanometre scale pores, gaps or trenches are of significant interest for a number of applications in nano and microsystems, including biosensors, nanofluidic devices and mechanical resonators. This paper presents the design of two test structure chips for the development of a process capable of the fabrication of controllable nanoscale trenches or gaps. This process uses uses standard microfabrication...
Due to their flexibility and compatibility with silicon devices, the use of carbon nanotubes as scaffolds for metal interconnect in flexible and wearable electronics has been proposed. This paper examines the performance of dual-height carbon nanotubes as flexible scaffolds for horizontal and vertical interconnects. For this purpose, a number of test structures have been designed and fabricated and...
A wafer-level test approach based on dedicated test structures sensitive to repetitive-power-pulsing stress is described. The approach is suitable for the qualification of different IC backend stack options with respect to thermomechanical robustness in an early phase of technology development and for process control purposes. In this work, we investigate low-cycle robustness by end-of-life tests...
In this work, electrical characterization on insulating aluminium nitride (AlN) and conducting tungsten (W) films was performed using dedicated test structures, in order to determine the thickness at which the films reached continuity. A discontinuous-to-continuous transformation of the AlN layer (occurring around 11 nm) resulted in a transition from ohmic to non-ohmic current conduction, in addition...
Transmission line method (TLM) structures are often employed to extract contact resistivity between a metal and a doped semiconductor region. In this article we treat the situation where the doped region is junction-isolated from the substrate. The junction isolation may be leaky resulting in erroneous parameter extraction. The effect of junction leakage is treated both theoretically and through exemplary...
A 6-pad True Kelvin Test Structure for advanced CMOS devices is proposed in this work. It allows test engineers to make very accurate and repeatable wafer-level measurements required for SPICE modelling applications. This design helps to overcome parasitic resistance of the probe holder and probe which is found to be dependent on test temperatures. It also mitigates increase in probe contact resistance...
In this work, an upgraded version of the so called New Y function [1] MOSFET parameter extraction methodology is proposed, taking the impact of access resistance into account. This new approach emphasizes the importance of considering access resistance variation with gate bias when extracting MOSFET parameters.
this paper describes a set of ring oscillator test structures, with individually measurable static and dynamic supply currents, Nwell/Pwell leakage currents, and frequency. Purpose is to characterize frequency, leakage and aging and their variabilities, serving the stringent low-energy consumption requirements for IoT products. To obtain a comprehensive technology performance overview, these ring...
In this paper, an integrated noise source realized with silicon Schottky diodes is presented. To this aim, dedicated test structures have been designed and characterized; the corresponding Schottky diodes feature an avalanche breakdown voltage close to −6 V. When biased around this breakdown voltage (their anode is grounded), an adjustable Excess Noise Ratio, ranging between 4 dB to 20 dB, was achieved...
It is not so easy to correlate DC Kelvin measurement data of an RF transistor and its non-Kelvin RF measurement data, because the actual bias voltages in the latter are not known precisely. Knowing the bias voltages requires accurate characterization of its embedding structure. This paper reports on an attempt at correlating DC and RF measurements of parasitic resistances associated with a MOSFET...
In this paper we present a new test vehicle designed for Resistive Random Access Memories (RRAM) arrays (from single bit to 1Mbits) characterization. The arrays structure, the decoders, and the selectors are explained as well as the electrical setup that drives the array decoders and performs the electrical characterization. Eventually, we discuss some electrical results concerning the switching voltage...
This paper presents a new methodology to characterize the GaN buffer doping level which is a critical parameter for epitaxial fabrication of GaN wafers. As demonstrated in this study, its characterization is challenging due to parasitic effects. Capacitance-Voltage (C-V) measurements are carried out on a Metal Insulator Semiconductor (MIS) structure with a gate on Al2O3 dielectric using a novel configuration...
This paper presents a test setup to characterize current collapse effects in power diodes such as GaN-based Schottky junctions. The setup principle and its main parts are described. Current/voltage transients can be recorded very shortly (2 microseconds on wafer prober) after reverse to forward switching. The related trapping effects are analyzed through temperature dependent measurements.
Test structures were produced for optimizing the design and fabrication of a patterned solid polymer electrolyte in an electrochemical oxygen sensor. Measurements showed that choice of photoresist developer and the underlying insulator material affected durability of the polymer structures. Test electrodes covered by the polymer were effective at supporting electrochemical oxygen detection.
A detailed statistical characterization of the drain current low-frequency noise (LFN) in sub-15 nm Si/SiGe Trigate NW pMOSFETs is presented. The slow oxide trap density and distribution, as well as the correlated mobility fluctuations effect are probed for several channel geometries. The LFN variability scaling is also presented and compared to established nano-scale planar CMOS technologies. Our...
Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, with particular emphasis on weak inversion region. Enclosed gate transistors show an improved gate voltage mismatch in weak inversion. A compact MOSFET...
This paper proposes a statistical modeling methodology of RTN (Random Telegraph Noise) gate size dependency utilizing skewed ring oscillator (RO) structures. An iterative characterization flow is developed to estimate RTN induced threshold distribution of each gate sizes of pMOSFET and nMOSFET independently. The skewed RO based test structure was fabricated in a 65 nm SOTB (Silicon On Thin Body) process...
Developing MEMS sensors with a high strain sensing range (up to 0.6) and a stepwise sensing mechanism could enable widespread downstream applications, by allowing intimate, mechanically conformable integration with soft biological tissues. Most approaches to date focus on challenges to associate the sensing mechanism with high peak strains under large deformation. By designing and characterizing test...
We apply the contact-end resistance method to TLM structures in order to characterize the graphene-metal contact resistance. A critical analysis of the experimental results shows that the commonly used transmission line model fails to accurately describe the graphene-metal contact under specific biasing conditions. The experiments suggest the presence of an additional resistance contribution associated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.