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In this paper, we demonstrate, for the first time, 3-D Monolithic integration of short-channel replacement metal gate InGaAs n-FinFETs on fully-depleted silicon-on-insulator CMOS, with TiN/W interlayer contacts. Top layer InGaAs nFETs feature raised source–drain and bottom layer CMOS has Si raised source–drain for nFETs, SiGe raised source–drain for pFETS, implants, silicide, and TiN/W plug contacts...
We demonstrate for the first time that InAlAs/InGaAs QW can be selectively grown on micron-sized InP-OI substrates, obtained by selective epitaxy in empty oxide cavities on Si. The concept, material and optical characterizations are presented, paving the way towards integrated light sources for infrared applications.
Realizing CMOS-compatible integrated lasers on silicon is a crucial step towards cost-efficient, high-functional optoelectronic integrated circuits (OEICs). Here, we report on a concept to embed active optical devices based on a bonded III–V epitaxial layer stack between the FEOL and BEOL of a CMOS silicon photonics chip. Ultra-shallow laser devices are realized with this concept and optically-pumped...
Interconnects have become a severe bottleneck in today's computing hardware [1]. For large-scale data centers in particular, the interconnect situation is even more severe [2]. The interconnect bandwidth and bandwidth density have to be increased on all system-levels. The ideal technology to increase the density is Si photonics (SiPh). While the integration of most of the SiPh components has been...
We demonstrate, for the first time, the 3D Monolithic (3DM) integration of In0.53GaAs nFETs on FDSOI Si CMOS featuring short-channel Replacement Metal Gate (RMG) InGaAs n-FinFETs on the top layer and Gate-First Si CMOS on the bottom layer with TiN/W inter-layer contacts. State-of-the-art device integration is achieved with the top layer InGaAs utilizing raised source drain (RSD) and the bottom layer...
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