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In order to study the electromigration characteristics of the butting solder joint in microelectronic packaging devices, this paper designs a Cu/Solder/Cu electromigration experiment to observe the change of the microstructure of the interface by scanning electron microscopy (SEM). It is found that the evolvement of the IMC at anode follows a parabolic growth rule under the condition of electric current...
The effects of thermal aging and electromigration on the tensile strength and microstructure of SnAgCu micro-interconnection solder joints with different volume were discussed in this paper. The experimental results show that isothermal aging results in coarsening of the microstructure in the solder joint, and electromigration leads to micro-hole or micro-crack in the cathode interface, which bring...
The butting solder joint of Cu/Sn-3.0Ag-0.5Cu/Cu was used to investigate the evolution of the intermetallic compound (IMC) and the degradation of the tensile strength of solder joint in this paper with different electromigration and aging time by scanning electron microscopy equipped with energy dispersive spectrometer and micromechanical testing. Meanwhile, the fracture of solder joint was also evaluated...
This paper investigated the individual effects of thermomigration behavior in Cu/Sn58Bi/Cu solder joints by applying a pure thermal gradient field at an ambient temperature of 20°C. To separate electromigration behavior, a novel apparatus was used to carry out the thermomigration experiment. The thermal finite-element simulation results showed that a sufficient thermal gradient existed in the Cu/Sn58Bi/Cu...
The line-type Cu/Sn/Ni interconnects were used to determine the effect of electromigration (EM) on the Cu-Ni cross-interaction under the current density of 1.0×104 A/cm2 at 150 °C for 100 h and 200 h. For the purpose of comparison, the line-type Cu/Sn/Ni interconnects were also aged at 150 °C for 100 h and 200 h. After soldering, Ni3Sn4 and Cu6Sn5 IMCs formed at the Sn/Ni and Sn/Cu interfaces, respectively...
The effect of electromigration (EM) on the solid state interfacial reactions in line-type Cu/Sn/ENIG interconnect was investigated under the current density of 5.0×103 A/cm2 at 150 °C for 100 h and 200 h. The Cu/Sn/ENIG specimens were also aged at the same temperature and durations for comparison. After soldering, Cu6Sn5 and Ni3Sn4 IMCs formed at the Cu/Sn and ENIG/Sn interfaces, respectively. During...
The alloying of Al interconnects with Cu has been shown [1] to give a vast improvement in electromigration performance over pure-Al interonnects. In the work presented here it has been demonstrated that there is an optimum degree of Cu distribution at which the resistance to electromigration of an aluminium-copper alloy metallization can befur-ther enhanced. This microstructure is achieved using a...
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