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This work demonstrates a new integrated inverse class E amplifier circuit, employing a pHEMT switching device and fully integrated output network for pulse shaping. The circuit is particularly suitable for full integration, since it does not need any RF choke for biasing, and no DC blocking capacitor is needed between the switch and the output network parallel resonance circuit. The back plate capacitances...
This paper presents a wide intermediate-frequency (IF) bandwidth down-conversion double-balanced Gilbert-cell mixer design in a 0.13-μm CMOS process. The load stage of the mixer is implemented by an LC tank with switched capacitors to complete three selectable sub-bands to cover the desired wide IF band. Both the RF and LO ports are integrated with Marchand baluns for single-phase input consideration...
This paper is to explain about the picture in picture technology that is used innovatively for automated wireless home security. The present home security system needs an LCD screen that is located somewhere inside the home to view the camera video. At some point of time, consider the time when you are watching a very interesting program in the television, may be the last over of a T-20 match or the...
Small cell base stations (BSs) that form an overlay layer on the existing macrocell network offer tremendous potential in terms of satisfying high data rate traffic requirements and enabling breakthrough services. However; small cell deployments can pose negative energy-efficiency implications if not equipped with advanced power saving mechanisms. In this work, we address this issue and propose algorithms...
Mobile communication networks are usually planned to provide some minimum service quality level during peak traffic hours. Consequently, in off-peak hours, when traffic loads are lower, the network is characterised by over-capacity, in the sense that same service quality targets can typically be satisfied with a reduced set of network resources, e.g. sites, carriers, etc. In this paper, we propose...
A challenge in designing a RF MEMS switch is the determination of its parameters to satisfy the application requirements. Often this is done through a set of comprehensive time consuming simulations. This paper employs neural networks and develops a supervised learner that is capable of determining S11 parameter for a RF MEMS shunt switch. The inputs are the length its L and the height of its gap...
This paper describes a single pole, single throw (SPST) 180 nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching times are competitive with switch applications utilizing GaAs pHEMT and silicon- on-sapphire technologies.
This paper describes a 180 nm CMOS thin film SOI technology developed for RF switch applications. For the first time we show that the well-known harmonic generation issue in HRES SOI technologies can be suppressed with one additional mask. Power handling, linearity, and Ron*Coff product are competitive with GaAs pHEMT and silicon-on-sapphire technologies.
Silicon-on-insulator technology utilizing very high resistivity handle wafers demonstrates sufficient performance for many cellular handset requirements. Technologies with either thin or thick device layers show promise. Thick-SOI prototype single pole six throw switch (SP6T) P-0.1dB of about 40 dBm and -75 dBc harmonic at 35 dBm output have been demonstrated at 900 MHz. Thin-SOI Ron-Coff product...
This paper presents a DC-30 GHz single-pole-four-throw (SP4T) CMOS switch using 0.13 mum CMOS process. The CMOS transistor layout is done to minimize the substrate network resistance. The on-chip matching inductors and routing are designed for a very small die area (250times180 mum2), and modeled using full-wave EM simulations. The SP4T CMOS switch result in an insertion loss of 1.8 dB and 2.7 dB...
This paper demonstrates a tunable RF filter design that can ldquoself-repairrdquo when the MEMS switch used for tuning the filter fails. The filter is designed so that symmetry exists at the segment where MEMS switch is placed. Redundant structures and MEMS switch are then added to the other side of the symmetry. These redundant structures will be used when the original MEMS switch fails. Minor design...
This paper presents a novel approach to monolithically implementing RF MEMS T-type switches for redundancy switch matrix applications. The T-type switch performs three operational states: two turning states and one crossover state. A six-mask fabrication process is adapted to fabricate the proposed design. Novel RF circuits were used to implement the entire system, including series contact cantilever...
A novel circuital model for a shunt connected RF MEMS coplanar switch, based on a fully analytical approach, is presented. The numerical simulations performed with the proposed new model are in good agreement with experimental measurements.
This paper presents the design and fabrication of fast DMTL RF MEMS phase shifters. Distributed MEMS Transmission Lines are being used with miniature RF MEMS switched capacitors (40times40 mum2), actuating at 25 V with a switching time around 1 mus. Both 90 and 180 degree phase shifters presented here operate at 20 GHz, are respectively less than 4.5 mm and 8.5 mm long. They are designed with 6 and...
This paper gives a quantitative analysis of the main mechanisms setting fundamental limits to the linearity performances of CMOS direct down-conversion mixers. An advanced low voltage solution is proposed for 3G cell-phones in a 90 nm CMOS technology that achieves: 3nV/radicHz average input referred noise in the band from 10 kHz to 1.92 MHz, a flicker noise corner of 300 kHz, 9 dBm IIP3 and 75 dBm...
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