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This paper presents a new concept of PUF based on a chaotic behavior. Chaos is essentially not a random phenomenon but a deterministic non-periodic flow which can be utilized to extract reproducible unique ID entropy. The strong parametric sensitivity of the chaos guarantees ID variety and unclonability over unpredictable manufacturing variations. An undesirable disturbance due to dynamic parametric...
The recently emerging SiC devices provide a promising solution to improve power converter efficiency and power density. However the expensive cost limited the widely use of SiC device. The parallel connection of SiC MOSFET and Si IGBT is introduced in this paper to utilize the advantage of this two different kinds of devices and proposed corresponding switching strategies. The switching loss and current...
The modular multilevel converter (MMC) is attractive for medium-or high-power applications because of the advantages of its high modularity, availability, and high power quality. Reliability is one of the most important challenges for the MMC consisting of a large number of submodules (SMs). The capacitor monitoring in each SM of the MMC is an important issue, which would affect the performance of...
This paper presents Direct Power Control (DPC) based on instantaneous power theory is presented. The simulation of a grid connected five level inverter via an inductive filter with a new direct power strategy is used. However, this control method is similar to the classic DPC method, in which used triangles instead of the sectors. Furthermore, the regulation of DC link without interfering the hysteresis...
Looking from the ICT (Information and Telecommunication Technology) observatory, the 21st Century is characterized by the explosion of requests for computing, storage and communication capabilities. Over the past few years global IP traffic has been growing exponentially. In this picture the dramatic ‘bottleneck’ is represented by the difficulties in moving digital information, at each scale of dimensions:...
The MEMS (Micro-Electro-Mechanical Systems) acronym recalls mechanical structures of micrometric dimensions performing a well-controlled electronically preset function. The real sense of a microelectromechanical system (MEMS) is the interaction of electronic circuits with the mechanical transducers (microstructures) to perform a useful function. However, the MEMS-microstructures require a wide range...
A novel SOI trench LDMOS with vertical double-RESURF is studied in this paper. A p-type silicon pillar is inserted beside the oxide trench as a vertical double RESURF layer, which can effectively modulate the electronic field and enhance the doping concentration in the drift region. The drain n+ region extends to the surface of buried oxide layer, shortening the motion-path in the high-resistance...
Devices aimed for the Internet of Things (loT) market are required to be both low cost and highly secured, as they are expected to be integrated in ordinary "things" while storing and processing sensitive information. In this paper we examine the vulnerabilities of a commercial secured IoT memory chip to precise and localized back-side laser fault injection. We explain the different steps...
The proposed method of depth control of the damaged layer of the polished wafers, based on application of Auger spectroscopy with the precision sputtering of the surface silicon layers and registration of the Auger electrons yield intensity from the wafer surface. The method makes it possible to perform the efficient depth control of the damaged layer and thus ensures the reliable control under the...
The paper is devoted to the sampling theorem in frequency domain, which provides the possibility and method for reconstructing the integral Fourier transform of a time-limited signal over an infinite number of coefficients of its Fourier series. The theorem is formulated and proved under very general assumptions: for non-zero index of signal overview window and frequency samples non-multiplicity of...
In this study, a comparison of the interfacial adhesion strength of Plasma Enhanced Chemical Vapor Deposition (PECVD) silicon nitride (SiN)/Cu and High-Density Plasma Chemical Vapor Deposition (HDP CVD) SiN/Cu was performed using the 4-Point-Bending (4PB) technique. Differences in critical energy release rate value Gc, which is an indicator of the interfacial adhesion strength, were observed. The...
We have developed a new method to quantitatively evaluate the detectability for voids in bonded wafers by using ultrasonic inspection. The test sample for evaluation consists of bonded two Si wafers and has artificial voids between the wafers. The depths of these artificial voids are 5, 10, 20, and 170 nm. In this study, the evaluation was made by obtaining the images of artificial voids by using...
Considering the convergence rate is a very important issue as distributed sensors networks usually consist of low-powered wireless devices and speeding up the consensus convergence rate is also important to reduce the number of messages exchanged among neighbors, a new adaptive method for weight assignment of communication links between sensor nodes is proposed based on the dynamic network topology...
Microchips are more and more complex and designed in thick 3 dimensional packages. In order to access and characterize by electron microscopy (SEM and TEM) any detected defect responsible for malfunction of the device, a large quantity of matter needs to be removed without damaging the surrounded area. The available techniques, such as plasma Focused Ion Beam (FIB), allow achieving high quality surfaces...
High-performance Silicon photonics platform based on an advanced Si CMOS technology is a key to produce low-power integrated photonic chips for the optical interconnect in data transmission. The state-of-the-art Silicon photonics technology has been developed by using 40 nm CMOS technology. Key features are highly reproducible optical devices and high-quality epitaxial growth Ge for photodetectors...
This paper presents an embedded bandstop filter in package to enhance the electromagnetic susceptibility (EMS) of integrated circuits (ICs). Equivalent model and test based on standards and specifications are the possible way to characterize the EMS of ICs. The designed coplanar bandstop filter is able to be embedded in the interposer of package and can decrease the noise from the external side to...
To enable simultaneous full-duplex radios, self-interference (SI) cancellation (SIC) circuits that attain large cancellation bandwidths (BWs) are needed to support modern standards such as Long-Term Evolution (LTE). For mobile applications, SIC should be linear, tunable, fully monolithic (compact form factor) and must be implemented at the radio-frequency (RF) front-end. Emulating the group delay...
This paper carries out a power-driven performance analysis on the most widely used LC oscillators' topologies, by means of the Inversion Coefficient methodology. The aim is to investigate on the best trade-off for Internet-of-Things related applications, where power consumption shall be minimized. The analysis is based on the BSIM6 model targeting a 40nm CMOS technology to investigate the trade-offs...
In this paper, we propose a novel way for 3D packaging of optical and electrical dies for parallel optical interconnections based on wet etched silicon interposer. The process flow of silicon interposer fabrication is demonstrated. Through three steps of deeply wet etching of silicon, a multi-level cavity is formed for embedding and flip-chipping of optical die and electrical die, and the optical...
Large 2.5D IC leads the trend for Field Programmable Gate Array (FPGA), graphic, and network application. Chip module (CM) is comprised of top die and Si interposer, and underfill (UF) is fully filled between them. However, coefficient of thermal expansion (CTE) of UF is greater than 20ppm, and CTE mismatch occurs between UF and Si (CTE~3ppm). How to tune chip module warpage is a key for large 2.5D...
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