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Microsystem technology based on micro machining technology and integrated circuit technology has the advantages of miniaturization, integration, intelligence, low cost, high performance, mass production and so on. An overview of the composition and working principle of the microsystem, it introduces the development history of micro system technology, current situation and industrial distribution pattern,...
Full duplex (FD) cognitive radio (CR) is one of the key enabling technologies for future wireless communication systems. Improvement in the spectrum efficiency, as promised by the CR technology can be further extended to FD-CR networks (FDCRNs) by performing a highly efficient and methodical spectrum sensing. In this paper, energy detection based effective spectrum sensing in FDCRNs considering residual...
An overview of the state-of-the art of the ongoing research on high-k gate dielectrics for the advanced nano-CMOS technology is presented. The most promising high-k candidates for next-generation MOS devices are highlighted. The associated performance degradation and the scaling limitations of these high-k materials are also discussed and emerging solutions and optimization schemes for the subnanometer...
This paper presents a Cylindrical GAA TFET based on germanium source for low power applications. The proposed device used the merits of low band gap material such as germanium, which is used as a material in the source region. Device investigations have been made in terms of DC characteristics like ION, IOFF, SS, ION/IOFF. The proposed device increases ON-current as high as 1.9 × 10−5 A/μm, which...
Ethylene glycol and ortho-dichlorobenzene solvents are used for Nickel (Ni) and Cobalt (Co) nanoparticles (NPs) synthesis, respectively. The wettability by these colloidal nanoparticles samples over silicon oxide wafer substrate has been studied to get insight about distribution of nanoparticles over oxide wafer. It has been found that the samples having nanoparticles in ortho-dichlorobenzene and...
In this paper, low cost 1200V UHV LDMOS device has been proposed. As BVD and Ron are contradictory, so to make low Ron, high breakdown voltage is the challenge of this paper. The key feature of this device is the linear P-top which is used to obtain best charge balance, and increase the diffusion current to move faster in the drift region which reduces the electric field and substantially helps to...
For many years now, SOI devices have been used as microelectronic devices operating in space environment as they have limited silicon volume for charge collection. In this work, the impact of irradiation by alpha-particles with energy in the range of 0.1MeV-1MeV has been analyzed for bulk as well as SOI devices with varying SOI thickness. This work is done using 2-D TCAD with radiation parameters...
Power switch devices which base on wide band-gap (WBG) semiconductor, such as silicon carbide metal-oxide-semiconductor-field-effect-transistor (SiC MOSFET) and gallium nitride high-electron-mobility transistor (GaN-HEMT) perform superior performance as compared with silicon (Si) MOSFET in high switching frequency, high blocking voltage, and high temperature operation. In this paper, a series of characteristic...
In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga2O3. MOSFETs formed by homoepitaxial growth of β-Ga2O3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation >...
Conventional silicon (Si) based power devices are commonly used in industrial battery charging applications. In most cases, fast switching operation is desired in such applications in order to have a compact power converter system in terms of size and weight, while in contrast, it drives for large switching losses. The maturity of wide bandgap (WBG) technology provides enormous opportunities to ameliorate...
During the last decade the devices used in the transmission chain of an ultrasound machine had a huge boost towards the integration. Starting from a discrete solution the trend is to integrate multichannel solution into a single chip. One or two half bridges, a clamp to GND and the TRSW are a standard integrated channel. Actually solutions with 8 channels are the state of the art. However the transmission...
Power semiconductor devices made with wide-bandgap (WBG) materials such as Silicon Carbide (SiC) are improving the energy conversion efficiency, power density, and switching performance of converters. This paper presents a comparative performance evaluation of Si IGBT, SiC JFET, and SiC MOSFET power devices implemented in an otherwise identical, non-isolated dc-dc boost converter. Switching characteristics...
An analysis of the failure modes due to short circuit on planar and trench 1200ν — 40mΩ SiC-MOSFETs is presented, including single and multiple events. Short circuit waveforms, energy, as well as electro-thermal simulations are presented, enabling the identification of the main root causes of failure. Results demonstrate similar performance regarding failure after turn-off (thermal runaway, gate)...
In this paper, we described a miniaturized microfluidic device able to electro-loading small volumes (200nl) of biologic samples via ElectroWetting on Dielectric (EWoD) actuation and detect DNA via polymerase chain reaction (PCR). The miniaturized silicon-based chip contains 48 microchambers properly chemically treated for EWOD process. The device was designed to contain also integrated temperature...
This paper presents a method for radial shift estimation of an electrode array located around the forearm. The algorithm is aimed at band-shaped EMG human-machine interfaces recognising hand gestures. Proposed algorithm relies on the approximation of muscle activity in several regions arranged radially around user's forearm. The intensity is represented as a polygon on a polar plane. To estimate current...
This paper presents Thales main results for the maturity development activities of TopAxyz MEMS Vibrating Beam Accelerometer (VBA) using a differential resonator architecture implemented on a planar SOI silicon layer. Proof of concept with Navigation grade performances level has already been presented at ISS2012. Development focused on two major challenges: to reach a high production yield and to...
Silicon co-implantation into PMOS FinFET fabrication is presented. The co-implantation method is applied at the source and drain to enhance transportation properties of the devices. The device is fabricated using an industry oriented tool, Sentaurus TCAD. Performance assessment is performed on two electrical parameters, which are threshold voltage and driving current. The simulation results show that...
Aiming at the performance evaluation on image captioning and video captioning, this paper discusses the existing performance metrics and then suggests a novel overall performance metric based on grey relational analysis of Grey System Theory. In our metric, all the available performance metrics of each captioning model is used to extract a comparative sequence. Meanwhile, a reference sequence is constructed...
In this work, we present FEAs based on silicon field emitter tips on top of silicon nanowires with four different device structures: (a) buried tips, (b) buried tips with graphene, (c) released tips, and (d) released tips with graphene. Measured device parameters are used to characterize the performance of the devices. In general, we obtain low turn-on voltages when bFN is low. Additional studies...
High performance PZT-on-silicon disk flexure resonators were recently demonstrated with peak |S21| of −1 dB with direct 50 Ω termination, high bandwidth tunability, and high coupling at 22 MHz. This paper explores the performance limits and design optimization of this new resonator in the space of radius and silicon thickness of the (1,1) disk flexure mode. This effort is enabled by the Rapid Analytical/FEA...
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