The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Gallium Nitride, in the form of epitaxial HEMT transistors on silicon carbide substrates is now almost universally acknowledged as the replacement for silicon bipolar, power MOSFET, high power devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-SiC based MMIC's which enable state-of-the-art high frequency performance and bandwidth to be extended into Ku-Band and Ka-Band...
Industry is adopting GaN HEMTs in 3kW or higher power systems, which exhibit excellent figure of merit compared to conventional Silicon devices. Thermal considerations as well as circuit parasitics in high power and high density GaN-based systems play a significant role in achieving overall performance. A high density and high efficiency Insulated Metal Substrate (IMS) based GaN HEMT power module...
This work reports the reliability of Infineon's CoolGaNTM 600V Enhancement mode GaN-on-Si transistors under high temperature reverse bias operation. Using the most conservative lifetime model; the extracted lifetime at use conditions of 480V, 125°C at 0.01% failure rate is greater than 70 years. The extracted activation energy (Ea) is 0.77eV with a single failure mode, Drain to Substrate. A common...
We present a new bonding process for gallium nitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and sCd at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout)...
Lateral GaN-on-Si HEMT technology enables integrated high-voltage half-bridges with gate drivers. However, the capacitive coupling through a common conductive substrate influences switching characteristics. The measured hard-switching turn-on time with floating substrate increased to over 16 ns as compared to conventional source-connected substrate (1 ns), switching 300 V/4A with GaN ICs comprising...
A lattice-matched AlInGaN digital alloy structure is studied based on the lattice-matched AlInN/GaN ultra-short period superlattices. The numerical findings suggest the potential capabilities of such AlInN/GaN digital alloy in mid- and deep-ultraviolet applications attributed to its tunable bandgap and broadband optical transitions.
Fully functional thin-film blue LED was fabricated by novel means of (1) performing epitaxial growth of a single crystalline InGaN/GaN heterostructure on a recycled graphene/SiC substrate (2) followed by release and transfer of the heterostructure.
GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.
We report on the monolithic integration of RGB InGaN dot-in-a-wire LEDs on a single chip. The correlated color temperature can be continuously varied in the range of 1900K to 6800K, while maintaining excellent color rendering index capability (CRI>90). Moreover, submicron scale RGB pixels were demonstrated.
Technological results about low temperature epitaxial deposition of GaN layers on LTCC substrates are reported. Epitaxial growths of GaN layers have been performed on commercially available LTCC substrates at 540 °C. Pre-growth preparations of the LTCC substrates has been carried out by aluminum oxide buffering layers on the LTCC surface. Further depositions have been performed in an epitaxial reactor...
Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-VDP (Van Der Pauw) are associated with temperature dependent dynamic Ron transients analysis showing that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation...
Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the...
Packages of commercial Gallium-Nitride power semiconductors present increasingly small dimensions to enable low parasitic inductance, increasing the heat flux density of the package and the challenges associated with their thermal management. This paper compares between Printed Circuit Boards and Direct Copper Bonded as substrates for a Gallium Nitride based half-bridge from a thermal and reliability...
Recently a multilayered structure with a low-velocity layer sandwiched between two high-velocity materials, one of which also works as a supporting substrate and another one as a coat isolating the wave from the influence of undesired external factors, was suggested for application in packageless sensors [1,2]. The thickness of a middle piezoelectric layer must be sufficient to confine the wave within...
Conventional acoustic wave correlators are known for their small size (nearly 105 times smaller than an analogous electromagnetic correlator), zero DC power consumption, and linearity. Reconfigurable orthogonally coded correlators could be used at the front-end of a RF transmit and receive chain to provide cross-correlation properties that can aide in simultaneous transmit and receive (STAR) systems...
III-nitrides InGaN solar cells have exhibited many favorable physical properties for space photovoltaic (PV) applications. Here we demonstrate the first nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on nonpolar m-plane and semipolar (2021) plane bulk GaN substrates. The optical properties and PV performance of these InGaN solar cells were systematically studied, including...
Hybrid integration of GaN and Si photonic devices is promising. Using a polymer bonding technique, GaN microring resonators are fabricated on Si substrate. Transmission characteristics of the GaN microring is measured.
Within this paper the development and design of a hybrid Ku-band block upconverter (BUC) with a GaN-HEMT amplifier is shown. The BUC is supposed to work within a very small aperture terminal (VSAT) where more often higher output power levels are required. Therefore the authors already developed GaN-HEMT power amplifiers up to Pout= 70 W. In here an integration of a 10 W amplifier within a newly developed...
The drain current of the Schottky barrier (SB) MOSFET is modeled mathematically by considering both thermionic emissions and Schottky barrier tunneling from the source to the channel. The drain current is dependent on the Schottky barrier height, but is barely affected by the doping concentration. For the depletion type gallium nitride SB MOSFET with both an ITO source and drain electrodes, the threshold...
Substrate termination of lateral 600 V-class GaN-on-Si HEMTs and half-bridges other than source-connection is investigated: Using conductive Si-substrates as current-return path and the GaN-buffer for high-side transistor-to-heatsink isolation eliminates parasitic inductances and thermal interfaces. Floating-substrate reduced 440 V switching times to 60% (reduced output capacitance) and fixed-to-ground...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.