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To take full advantages of Wide Bandgap power semiconductor devices, breakthroughs on power module development are heavily explored nowadays. This paper introduces a 1.2kV SiC half bridge intelligent power module utilizing 80μm flexible epoxy-resin as substrates instead of traditional Direct-bonded Copper, for better thermal-stress management and lower cost. The investigation on the flexible epoxy-resin...
High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of high-voltage semiconductors, such as 10 kV SiC MOSFETs, has the added challenge of maintaining low electric field concentration in order to prevent premature dielectric breakdown. This work proposes a wire-bond-less, sandwich structure with embedded...
Due to its potential applications in optoelectric area, WS2/graphene heterojunction attracts much attention in past years. But until now, modulation of their working performance is still a big challenge for the researchers. In this work, WS2/graphene heterojunctions have been sucessfully fabricated on Si substrate. Moreover, their surface configuration were researched by STM and AFM techniques. Finally,...
A switching circuit system based on FPGA is designed and implemented in this paper to provide high-frequency adjustable-phase voltages for the ultrasonic motor. For the existing drive systems of the ultrasonic motor, the bus voltage is usually 12V DC or 24V DC supporting by an external adapter, the driving voltages of the ultrasonic motor, however, are required to be boosted yet. Then, the step-up...
High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentration in order to prevent premature dielectric breakdown. Consequently, in addition to the usual electromagnetic,...
In the recent years, diamond Schottky diodes with high Figures of Merit have been demonstrated. Static and dynamic characteristics of diamond Schottky diodes are presented in this paper. The diamond substrate is associated with silicon MOSFETs in a power switching cell, showing promising switching characteristics. However, even if these diodes show a high current density, the effective total current...
This study report a simulation approach to fabricate virtually III-V MOSFET with high-k dielectrics using technology computer aided design, TCAD tools software from the company Silvaco International. In this, submicron InxGa1-xAs enhancement mode MOSFETs is simulated. This study presents current-voltage, I-V characteristics of III-V MOSFETs. Next, simulation work using Silvaco's TCAD Tools based on...
A switching circuit system based on FPGA is designed and implemented in this paper to provide high- frequency adjustable-phase voltages for the ultrasonic motor. For the existing drive systems of the ultrasonic motor, the bus voltage is usually 12 V DC or 24 V DC supporting by an external adapter, the driving voltages of the ultrasonic motor, however, are required to be boosted yet. Then, the step-up...
In this paper, twin gate rectangular recessed channel (TG-RRC) MOSFET with independent gate control is used to realize its application in digital electronics by using it as two input logic. The input logic is controlled by the independent gates which have different work functions (Φ1 for gate 1 and Φ2 gate 2) which are separated by oxide layer of 2 nm, thus controlling various electrical parameters...
Forward body bias method for evaluating total ionizing dose (TID) effect in deep sub-micron CMOS integrated circuits is proposed. Without traditionally complicated, time consuming and costly transistor radiation modeling or chip irradiation test, it is demonstrated here that by applying equivalent forward body bias on susceptible NMOS transistors, TID effect evaluation for deep sub-micron CMOS ICs...
Butting and inserted pickup layout in MOSFETs leads to substrate resistance shunting effect and serious ESD robustness degradation. This work develops novel layout with external well/ diffusion resistance embedding between the substrate and the grounding terminal in the NMOS transistors. This layout method can greatly enhance ESD performance of the inserted pickup devices. The second breakdown current...
The drain current of the Schottky barrier (SB) MOSFET is modeled mathematically by considering both thermionic emissions and Schottky barrier tunneling from the source to the channel. The drain current is dependent on the Schottky barrier height, but is barely affected by the doping concentration. For the depletion type gallium nitride SB MOSFET with both an ITO source and drain electrodes, the threshold...
Electron mobility of ultra thin body (UTB) GeOI «MOSFETs with body thickness (Tbody) down to 3 nm has been systematically investigated and significant mobility enhancement with decreasing Tbody has been observed for the first time. This channel thickness scaling induced mobility enhancement can be attributed to the unique physical property of ultra thin Ge where the electron effective mass reduces...
We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68...
Twenty-five years ago I had the honor of serving as technical program chair for the 50th Device Research Conference. For the plenary session we invited grey beards: Chapin Cutler, Makoto Kikuchi, Jim Early, and Herb Kroemer. I enjoyed the talks and after the session a young attendee remarked how great it must have been to be involved in the device research the plenary speakers recounted. I agreed...
GaN lateral transistors (HEMTs) continue to penetrate the power electronics market demonstrating excellent performance in the medium power applications. However, for power applications 10kW and higher, vertical GaN devices are preferred over lateral one, since the former offers higher current and power densities. To date, several different vertical transistor structures have been proposed and reported,...
β-Ga2O3 is being actively pursued for power devices owing to its wide bandgap of 4.5 eV and the availability of melt-grown native substrates for high quality epitaxy. Depletion and enhancement mode Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETS) reported to date have been implemented as lateral devices. For high voltage and high power ratings, vertical topologies are preferred since...
In this paper, recent topics of vertical GaN power devices fabricated on GaN substrates are presented with particular emphasis on SBDs and trench MOSFETs we developed.
The performance of integrated DC/DC converters is affected by substrate parasitic devices, such as bipolar transistors and thyristors: these devices cause enhanced substrate noise that can lead to the malfunctioning of the control circuitry, they degrade the efficiency, and thyristors can even cause the failure of the converter by latch-up. Due to the lack of software tools for the evaluation of the...
This paper presents the assembly and characterization of an integrated all silicon-carbide (SiC) 3-to-1 phases matrix converter, intended for harsh environment withstand capability and highly reliable operation (e.g., renewable energies, solid-state transformation, smart grids, electric transport). Commercial SiC MOSFETs in bare-die form are used to develop custom-packaged bi-directional switches,...
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