Search results for: Yueh-Chin Lin

Items from 1 to 20 out of 41 results

article

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Ming-Wen Lee, Yueh-Chin Lin, Kuan-Hsien Lai, You-Chen Weng, more

physica status solidi (a) > 220 > 8 > n/a - n/a

High‐Electron‐Mobility Transistors In article number 2200536, Ming‐Wen Lee, Edward Yi Chang, and colleagues report on AlGaN/GaN HEMTs on silicon substrates using thick copper‐metallized interconnects with a Pt diffusion barrier layer for Ka‐band application. The reported AlGaN/GaN HEMTs can enhance the device performance with good reliability. High voltage stress and high thermal stability tests...

article

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Ming-Wen Lee, Yueh-Chin Lin, Kuan-Hsien Lai, You-Chen Weng, more

physica status solidi (a) > 220 > 8 > n/a - n/a

Herein, the AlGaN/GaN high‐electron‐mobility transistors (HEMTs) on silicon substrates using thick copper‐metallized interconnects with Pt diffusion barrier layer for Ka‐band application are reported. High output power density of 6.6 W mm⁻¹ with power‐added efficiency (PAE) of 45.6% at 28 GHz is achieved for the 4 × 50 μm device in continuous‐wave (CW) mode. No obvious change in the drain–source...

article

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al₂O₃ Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

Huan-Chung Wang, Ting-En Hsieh, Yueh-Chin Lin, Quang Ho Luc, more

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 110 - 115

We demonstrate the electrical performances of AlGaN/GaN metal–insulator–semiconductorhigh electron mobility transistors (MIS-HEMTs) with high quality Al₂O₃ gate dielectric deposited by plasma enhanced atomic layer deposition using both H₂O and remote O₂ plasma as oxygen sources. Excellent gate-dielectric/GaN interface and Al₂O₃ film quality were obtained, resulting in a very small threshold voltage...

article

Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells

Shun Sing Liao, Chuan Lung Chuang, Yueh Chin Lin, Chang Fu Dee, more

Thin Solid Films > 2018 > 660 > C > 1-9

In this study, we show that the efficiency and carrier life time of multi-crystalline silicon solar cells were significantly improved by using a low pressure (20,000 Pa) and temperature (650 °C~750 °C) environment grown thermal oxide (TO) as the surface passivation layer. In this experiment, during the first stage, the oxidation process was done at 650 °C and a lower pressure of 20,000 Pa for 2 mins...

article

Enhancement-Mode GaN MIS-HEMTs With LaHfO_x Gate Insulator for Power Application

Yueh Chin Lin, Yu Xiang Huang, Gung Ning Huang, Chia Hsun Wu, more

IEEE Electron Device Letters > 2017 > 38 > 8 > 1101 - 1104

This letter reports an E-mode GaN MIS-HEMT using a composite La₂O₃/HfO₂ gate insulator for power device applications. The composite dielectric formed an amorphous LaHfOx layer after post-deposition annealing. The GaN MIS-HEMT with amorphous LaHfOx gate dielectric showed good oxide film quality and excellent HfLaOx/GaN interface properties, as demonstrated by the measured C–V characteristics. Consequently,...

article

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Tien Tung Luong, Franky Lumbantoruan, Yen‐Yu Chen, Yen‐Teng Ho, more

physica status solidi (a) > 214 > 7 > n/a - n/a

One of the epitaxial issues pertaining to the growth of AlGaN/GaN HEMTs on Si is the decrease of parasitic losses that can adversely impact the RF device performances. We characterized the microwave losses in coplanar waveguides (CPWs) on GaN‐based high‐electron‐mobility‐transistors (HEMTs) and their buffer layers on Silicon substrate, up to 40 GHz. The RF losses depend not only on the crystalline...

article

Reliability improvement in GaN HEMT power device using a field plate approach

Wen-Hao Wu, Yueh-Chin Lin, Ping-Chieh Chin, Chia-Chieh Hsu, more

Solid-State Electronics > 2017 > 133 > C > 64-69

This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore,...

article

Investigation of Mo/Ti/AlN/HfO₂ High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application

Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, more

IEEE Electron Device Letters > 2017 > 38 > 5 > 552 - 555

Use of the Mo/Ti/AlN/HfO₂ metal/dielectric stack to increase the permittivity of HfO₂ for low power consumption InGaAs-based MOSFET is investigated in this letter. The dielectric constant of HfO₂ was found to increase by 47%, from 17 to 25, after Ti doping without affecting the interface trap density around the mid-gap of the MOSCAPs. A strong inversion behavior with low leakage current for the MOSCAP...

article

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

Shih-Chien Liu, Chung-Kai Huang, Chia-Hua Chang, Yueh-Chin Lin, more

IEEE Journal of the Electron Devices Society > 2017 > 5 > 3 > 170 - 174

An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under Fermi level. Besides, to satisfy charge balance, the net charge density at the AlGaN surface must equal to the 2DEG carrier density. Thus, the positive...

chapter

Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111)

Tien Tung Luong, Franky Lumbantoruan, Yen-Yu Chen, Yen-Teng Ho, more

2017 China Semiconductor Technology International Conference (CSTIC) > 1 - 3

2017 China Semiconductor Technology International Conference (CSTIC)

The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such mechanisms of the RF loss of GaN/Si is discussed. It is proven that using a thin high-low-high temperature...

article

InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH₃ Post Remote-Plasma Treatment

Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Yen-Ku Lin, more

IEEE Electron Device Letters > 2017 > 38 > 3 > 310 - 313

In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH₃ post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO₂/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO₂/AlN/InGaAs, the subthreshold swing and the peak effective...

article

Effect of surface passivation on the electrical performance of AlGaN/GaN high‐electron‐mobility transistors with slant field plates fabricated using deep‐UV lithography

Lu‐Che Huang, Chia‐Hua Chang, Yueh‐Chin Lin, Heng‐Tung Hsu

physica status solidi c > 14 > 1-2 > n/a - n/a

AlGaN/GaN high‐electron‐mobility transistors (HEMTs) have been extensively applied for high power applications at high frequencies. To further improve the device performance, field plates and passivation layers are commonly integrated with the device technology. This paper is to investigate the effects of surface passivation thickness on the electrical performance of AlGaN/GaN HEMTs with slant field...

article

Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In_0.53Ga_0.47As

Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, more

IEEE Transactions on Electron Devices > 2016 > 63 > 12 > 4714 - 4719

To achieve low power consumption for CMOS devices, the gate metals must have effective work function (EWF) aligned with the band edges of the channel material and have a small WF variation (WFV). The multilayer TiNi alloys have been successfully applied as the gate metals for HfO₂/In_0.53Ga_0.47As MOS devices in this paper. The EWF of TiNi alloys was found to increase from 4.41 eV for as-deposited sample...

chapter

HfO2/AlN/In0.53Ga0.47As MOS devices electrical properties and reliability studies

Edward Yi-Chang, Quang-Ho Luc, Huy-Binh Do, Po-Chun Chang, more

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) > 41 - 44

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

In this article, we demonstrate plasma-enhanced atomic layer deposition (PEALD) as an effective passivation technique to establish high interfacial quality of high-k/InGaAs structures. Performing PEALD-AlN as an interfacial passivation layer (IPL), excellent capacitance-voltage (C-V) characteristics have been achieved for the HfO2/n, p-In0.53Ga0.47As MOSCAPs. The effects of AlN-IPL on the effective...

article

Electrical Analysis and PBTI Reliability of In_0.53Ga_0.47As MOSFETs With AlN Passivation Layer and NH₃ Postremote Plasma Treatment

Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Shih-Chien Liu, more

IEEE Transactions on Electron Devices > 2016 > 63 > 9 > 3466 - 3472

We report a notable improvement in performance, electron transport, and reliability of HfO₂/In_0.53Ga_0.47As nMOSFETs using a plasma-enhanced atomic layer deposition AlN interfacial passivation layer (IPL) and NH₃ postremote plasma treatment (PRPT). The interface state density

$D_{{\mathrm {it}}}$

decreased by approximately one order of magnitude from

$6.1 \times 10^{{\mathrm {12}}}$

$4 \times 10^{{\mathrm {11}}}$

...

article

Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials

Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, more

IEEE Electron Device Letters > 2016 > 37 > 9 > 1100 - 1103

Accurate determination of the flat band voltage (

$V_{\mathrm {{FB}}}$

) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal–oxide–semiconductor (MOS) devices. A modified method to accurately determine

$V_{\mathrm {{FB}}}$

of the In_0.53Ga_0.47As n-type MOS device is presented. The effects of capacitance voltage...

chapter

The effect of surface passivation on the electrical performance of Al-GaN/GaN HEMTs with slant field plates

Heng-Tung Hsu, Yueh-Chin Lin, Lu-Che Huang, Chia-Hua Chang, more

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) > 1

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]

We have investigated the effects of surface passivation thickness on the electrical performance of Al-GaN/GaN HEMTs with slant field plates. It is found that the existence of the silicon nitride passivation layer helps to improve the DC characteristics of the devices in terms of the lower drain current collapse, higher maximum DC transconductance, and higher maximum drain current. RF wise, the devices...

chapter

Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures

Quang-Ho Luc, Po-Chun Chang, Huy-Binh Do, Yueh-Chin Lin, more

2016 China Semiconductor Technology International Conference (CSTIC) > 1 - 4

2016 China Semiconductor Technology International Conference (CSTIC)

In situ PEALD processes, including PEALD-AlN pre-gate and post-gate plasma gas treatments, have been studied as a promising passivation method to realize the high interfacial quality of high-k/III-V structures. The formation of excellent dielectric gate stack has been obtained on the HfO2/n, p-In0.53Ga0.47As MOSCAPs by inserting an AlN interfacial layer. The improvements on the electrical properties...

article

Demonstrating 1 nm-oxide-equivalent-thickness La₂O₃ and HfO₂ multi-layer composite oxides on In_0.53Ga_0.47As MOS capacitor

Wen-Hao Wu, Yueh-Chin Lin, Tzu-Ching Hou, Tai-Wei Lin, more

Electronics Letters > 2016 > 52 > 1 > 59 - 61

The use of a high k composite dielectric composed of La₂O₃ and HfO₂ layers as the gate dielectric for In_0.53Ga_0.47As MOS application is proposed. Two multi-layer structures of La₂O₃ (1 nm)/HfO₂ (1 nm) and La₂O₃ (0.5 nm)/HfO₂ (0.5 nm) were deposited and annealed at 450 and 500°C for device performance comparison. X-ray photoelectron spectroscopy, TEM and C–V measurements were used for the interface...

article

Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN_X Schottky Metal Structures for High-Power Applications

Ting-En Hsieh, Yueh-Chin Lin, Chung-Ming Chu, Yu-Lin Chuang, more

Journal of Electronic Materials > 2016 > 45 > 7 > 3285-3289

In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore,...

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INFONA - science communication portal

Search results for: Yueh-Chin Lin

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al₂O₃ Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells

Enhancement-Mode GaN MIS-HEMTs With LaHfO_x Gate Insulator for Power Application

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Reliability improvement in GaN HEMT power device using a field plate approach

Investigation of Mo/Ti/AlN/HfO₂ High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111)

InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH₃ Post Remote-Plasma Treatment

Effect of surface passivation on the electrical performance of AlGaN/GaN high‐electron‐mobility transistors with slant field plates fabricated using deep‐UV lithography

Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In_0.53Ga_0.47As

HfO2/AlN/In0.53Ga0.47As MOS devices electrical properties and reliability studies

Electrical Analysis and PBTI Reliability of In_0.53Ga_0.47As MOSFETs With AlN Passivation Layer and NH₃ Postremote Plasma Treatment

Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials

The effect of surface passivation on the electrical performance of Al-GaN/GaN HEMTs with slant field plates

Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures

Demonstrating 1 nm-oxide-equivalent-thickness La₂O₃ and HfO₂ multi-layer composite oxides on In_0.53Ga_0.47As MOS capacitor

Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN_X Schottky Metal Structures for High-Power Applications

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