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This paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half-bridge two-level SiC power module with six MOSFETs and can be used for coupled electrothermal simulation. The finite-element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical resistor–capacitor (RC) network model. It was...
High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of high-voltage semiconductors, such as 10 kV SiC MOSFETs, has the added challenge of maintaining low electric field concentration in order to prevent premature dielectric breakdown. This work proposes a wire-bond-less, sandwich structure with embedded...
High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentration in order to prevent premature dielectric breakdown. Consequently, in addition to the usual electromagnetic,...
SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. After that, Esw of a 650V GaN-HEMT is measured in hard switching condition and is compared with that...
SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. Then static and dynamic characteristics of commercial SiC and GaN power transistors are...
Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to meet all the advantages. In this paper, we present a reliable integrated concept of a new packaging solution for multi-chip SiC devices aiming to have...
The U.S. offers multiple mechanisms for funding both small and large businesses to promote innovations in science and industry. However, dating back to the 80s many U.S. companies have chosen to take products created domestically and manufacture them overseas. This has been a particularly disturbing trend in the semiconductor business leading to the loss of jobs and technical expertise as students,...
This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to accommodate 8 SiC JFETs and 4 SiC diodes. Electromagnetic simulation results reveal extremely low inductance...
3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a hybrid half-bridge in a 3D packaging configuration, dedicated for high voltage application. A dynamic electrical test of the package is presented.
This paper presents an investigation into the integration of high current density inductors into a double side cooled sandwich power module package from the perspective of thermal management of the integrated inductors. The advantage of using this integration method with regards to using the converter thermal management system will be discussed in order to create a high speed optimised commutation...
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