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This paper details a co-design and modelling methodology to optimise the flip-chip assembly parameters so that the overall package and system meets performance and reliability specifications for LED lighting applications. A co-design methodology is employed between device level modelling and package level modelling in order enhance the flow of information. As part of this methodology, coupled electrical,...
With the rapid increase in the number of integrated circuits I/O, the traditional wire bonding package has been unable to meet the high I/O number of interconnection needs, flip-chip process can undoubtedly solve the high I/O number of miniaturization package problems, especially flip-chip plastic package can fundamentally meet the increasing number of pins, improve speed and high frequency performance,...
In this article we present the conception, technological fabrication and electrical characterization of 3D hybrid pixel detector modules based on read out chips (ROCs) with through silicon vias (TSVs) which are flip chip bonded onto silicon photon sensors for X-ray detection. The TSVs in the ROCs enable a vertical routing of their peripheral IOs to the back side where they are spread to a land grind...
Nowadays, copper bump is often used in driver IC which usually used in high current density environment. High current density leads to electromigration. Therefore, the main objective of this paper is reliability analysis, including observing the changing by electromigration in copper pillar bump with different magnitude of current and temperature. Use gridding and Scanning Electron Microscope (SEM)...
The quest for thin, low profile packaging solutions for mobile devices and cost reduction with improved performance continues to drive the development of new packages. The development of fan-out wafer level package (FO-WLP) is the latest industry trend. There are increasing number of suppliers for FO-WLP and a growing number of applications. This paper examines the market trends and drivers for package...
For several years, an approach to use fine-pitch flip chip package (<150um) with copper pillar/ microbump is for the realization of 2.5D/3D packages of higher density and performance enhancement. Generally, flux is widely used to clean the surfaces to be soldered for good wetting and form reliable joints. The upcoming concerns about fluxes are clean-ability for fine-pitch package, voiding and compatibility...
In this work, the 14 nm CPI (Chip and Package Interaction) challenges, development and qualification were investigated by using 80 um pitch Cu pillar BOL (Bump on Lead) technology in flip chip CSP package. We evaluated 14 nm BEOL (Backend of Line) film strength and adhesion in the torture tests as an early assessment. After passing the torture tests, the package is evaluated in the CPI reliability...
It is a trend of electronic packaging for light weight and thin package due to the increasing demand for 3C electronics and adaptive devices. As the device get smaller and lighter the substrate of the package get thinner and more complex. Therefore, it is an issue of substrate warpage due to factors such as shrinkage rate, uneven stress distribution in the substrate, and layout of copper layer, and...
BGA substrates made of organic materials are now industry standard as they provide significant advantages over the ceramic dielectric-based predecessors in manufacturing cost and electrical performance. A typical organic laminate structure consists of one or more layers of build-up and copper on each side of a copper clad core. In recent years, the industry has also introduced the concept of organic...
In this paper, a p-pad-up InGaN-based flip-chip (FC) thin-film light-emitting diode (TFLED) on electroplating metallic substrate was fabricated by a combination of electrodes isolation, FC configuration, copper electroplating, and laser lift-off techniques. This allowed formation of n-contacts on Ga-polar n-GaN and superior design of n-electrode pattern, resulting in an improved electrical performance...
In this work, the 14 nm CPI (Chip and Package Interaction) challenges, development and qualification were investigated by using 130 um pitch Cu pillar bump in flip chip BGA package without heat spreader. We evaluated 14 nm BEOL film strength and adhesion in the torture tests. After passing the torture tests, the package is evaluated in the CPI reliability tests following the JEDEC standard. We optimized...
Copper dendrites on a flip chip die was analysed by SEM/EDX, FIB and TEM. The dendrites were found to consist of two layers. The upper layer visible under optical and SEM inspection consist of a carbon rich copper compound. TEM analysis revealed another layer under this carbon rich layer that consist of copper, tin and lead compounds. A possible mechanism of dendrite formation due to an electrochemical...
Smart phone & portable devices have dominated the Semiconductor growth, and drive the IC packages to smaller, lighter & thinner, but integrate more function. Besides SOC solution being driven by design house or system company, we have seen more packages of Quad Flat Non-lead (QFN), wafer level CSP (WLCSP), fan out WLCSP (FOWLP) and system in package (SIP) are being widely used in smart phone...
The industry saw the transition of flip chip technology from lead free solder system to Cu pillar bump a few years ago. The risk of fail location under electromigration (EM) shifts from the solder/UBM interface of the standard solder bump to the solder joint of the Cu pillar solder joint. This study investigated the performance of the Cu pillar solder interconnect under current stress testing and...
Different radios require different levels of power output; for example, GSM demands up to 4 W (36 dBm) for its RF operations. CMOS RFICs are frequently designed up to 2 W (32+ dBm) [1, 2]. Recently, copper to copper bonding technology has been fiercely pursued in C2W and W2W domains [3-5]. However, the technology is equally applicable in other packaging platforms where similar materials are packaged;...
2.5D packaging technology utilizing silicon interposers is being developed and used for high-performance applications as the demand for miniaturization and higher density continues to increase. Silicon interposers enable very high density interconnects using standard semiconductor fabrication process technology, but are challenged as size increases. An alternative solution, high density laminate interposer,...
Compliant interconnects are a viable solution for coefficient of thermal expansion (CTE) mismatch failures and it is therefore important to understand their performance at high frequency. In this work, we present double helix shaped compliant interconnects that are designed and fabricated on top of a coplanar waveguide (CPW) test structure followed by flip chip bonding. The high frequency performance...
Replacing Silicon Dioxide (SiO2) with low-k and ultralow-k (ULK), as a dielectric, in the Back-End-Of-Line (BEoL) has allowed the trend of miniaturization and convergence to continue. Although using low-k and ULK greatly increases the device performance, being mechanically weak these dielectric materials pose a serious challenge from the reliability standpoint. Delamination along the metal-dielectric...
Commonly, during the process development cycle for new products, limitations exist on the materials that are available for the prototype work. Most SMT devices are readily available in different formats and solder alloys to satisfy most of the needs for passive components, however, many times, IC devices are limited to what is available from the fab or IC brokers. These limitations range from die...
ITRS has predicted that integrated chip (IC) packages will have interconnections with I/O pitch of 90 nm by the year 2018. Lead-based solder materials in flip chip technology will not be able to satisfy the thermal mechanical requirement these fine pitches. Of all the known interconnect technologies, nanostructure interconnects such as nanocrystalline Cu are the most promising technology to meet the...
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