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an innovative TSV approach that removes the historical limitations of Cu and W filled TSVs, making W TSVs once again attractive. Both films have their own advantages and disadvantages. Cu TSVs has two major advantages, one Cu electroplating has the ability to fill high aspect ratio vias enabling a wider via compared to W, and two Cu resistivity is much lower than W enabling a lower resistance via...
A mechanical study of silicon interposer bow reduction, from wafer level manufacturing to large die stacking including analytical modeling, is presented in this paper. Indeed, understanding and reducing the warpage of a dissymmetrical substrate is fundamental for assembly yield and interconnects reliability. The target here is a bow less than 50 µm for a 650 mm2 Si-interposer.
Electronic power systems follow the general trend of miniaturization and functional density. 3D technologies provide an interesting response if adapted to power specifications. In the framework of the ENIAC JU funded project Enhanced Power Pilot Line (EPPL), a new type of device has been proposed consisting of an H bridge of power transistors and a Si interposer. This paper presents an H bridge of...
Current TSV integration schemes include via-first, via-middle and via-last process flows. In this paper, a low thermal budget, 10ìm pitch and aspect ratio 10 (5ìm diameter, 50ìm depth) via-last TSV module is presented. The proposed via-last module is plugged in after the thinning module, with 50ìm thinned device wafers temporary bonded to a Si carrier, using Brewer Science Zonebond® material. After...
Etch is one of the most critical processes for high-aspect ratio TSV as it defines the profile and wafer level depth uniformity of TSV, thus having a great impact on other downstream processes in TSV module and TSV backside reveal. This paper presents the challenges encountered in developing the 6μm × 55μm TSV (6μm diameter × 55μm depth) with a number of continuous process optimizations. These include...
Despite big progress with respect to improving Ag pastes for contact formation on Si solar cells most of today's Si solar cells are significantly limited in their performance by the front contacts and the constraints that these contacts impose on front emitter diffusion and surface passivation. Furthermore, Ag contacts are imposing a high consumable cost. This work demonstrates that laser ablation...
TSV (through-silicon-via) has been regarded as a key technology for 2.5D and 3D electronic packaging. However, the manufacturing of the through silicon interposer (TSI) is very challenging and costly. The minimization of the warpage of the TSV interposer wafer is crucial for successful subsequent processing, for example, thin wafer handling, backside via revealing and copper pillar bumping. In this...
The technology of 3D IC integration is highly probable to achieve the demand for high performance, better reliability, miniaturization and lower-priced portable electronic products. Since the through silicon via (TSV) is the heart in 3D IC integration architectures, the reliability issues of TSV interconnects should be extremely concerned. Due to the large thermal expansion mismatch among the Cu,...
Fabrication of high aspect ratio through silicon vias (TSVs) in a Si interposer and fine pitch solder microbumps on a top Si die is discussed in this paper. Chip stacking result of the Si interposer and the top Si die is also presented. TSVs with 25 in pitch and aspect ratio higher than 10 are etched with BOSCH process. To avoid difficulties in wetting the sidewall of the TSVs, bottom-up...
Silicon interposers with through-silicon vias (TSVs) will enable further miniaturization and reduction in power consumption for future electronic systems. The design and method of integration of the TSVs can have a significant effect on the interposer process complexity, yield, and reliability. This paper will compare two different process approaches for Si interposer fabrication. In one approach,...
Thin wafer handling has become a very challenging topic of emerging 3D technologies, and temporary wafer bonding to a carrier support wafer is one way to guarantee the required mechanical stability and rigidity to the thin wafer during subsequent backside processing. The temporary bonding approach followed by Imec is based on the adhesive material HT10.10 from Brewer Science (WaferBond® HT-10.10)...
For the demands of multifunction, high density interconnection, high performance and integration of homogeneous or heterogeneous ICs, three dimensional IC (3DIC) packaging technologies by through silicon via (TSV) and microbump were widely studied recently. Intending to learn the reliability performance of Pb-free microjoints, 4 chips were interconnected with one Si interposer by Sn2.5Ag microbumps,...
Since 3D-IC becomes popular nowadays, solder micro-bumps plays an important role to develop TSV technology. This study verifies solder micro-bump efficiency via cracking as index. The micro-bump cracking is observed at the interface of intermetallic compound (IMC) layer after Si chip and Si carrier bonding. It was found that P-rich Ni layer will perform weaker and brittle solder joint by means of...
We report on recent experimental studies performed as part of a 3D integrated circuit (3DIC) production-worthy process module roadmap check for 300 mm wafer-to-wafer (WtW) copper-to-copper thermocompression bonding and face-to-face (F2F) aligning. Specifically, we demonstrate submicron alignment capabilities (3sigma alignment variability ~ 1 μm) post Cu bonding on topography M1V1-to-M2 Cu wafers with...
In this paper, through silicon via (TSV) based interposer fabrication processes for 3D stack packaging has been presented. An interposer test chip of 25 ?? 25 mm size, has been designed with full array TSVs of 50 um size vias at 300 um pitch. TSVs of aspect ratio 4 are formed on 8 inch wafer using DRIE process and these vias are isolated by thermal oxide, followed by barrier/seed layer of Ti/Cu deposition...
Crystalline silicon photovoltaic (PV) industry is growing at an average rate of ~ 15%. Continuing carbon-based fuel depletion in combination with increasing green house effects will continue to add to this robust growth trend. Conservative estimates indicate that PV market will reach ~ 100 GWp/year before the year 2020. In order to sustain such production levels, impact on materials and supplies supporting...
A novel approach on wafer-level passivation using a thin, hermetic borosilicate glass layer replacing the polymers in redistribution is presented here. The technology will be benchmarked to those conventional technologies. The glass layer is deposited at low temperatures (T<100degC) using a plasma-enhanced e-beam deposition and can be structured by a lift-off process using a standard photoresist...
High density three dimensional (3D) interconnects formed by high aspect ratio through silicon vias (TSVs) and fine pitch solder microbumps are presented in this paper. The aspect ratio of the TSV is larger than 10 and filled with Cu without voids; there are electrical nickel and immersion gold (ENIG) pads on top of the TSV as under bump metallurgy (UBM) layer. On the Si chip, Cu/Sn solder microbumps...
A technology yielding thin, hermetic borosilicate glass layers at high deposition rates and low substrate temperatures and its potentials for a novel approach on wafer-level passivation is described. The benefits of this CMOS-compatible technology are highlighted, comparing the achievable film characteristics to polymers commonly used for these purposes. The glass layer is deposited at low temperatures...
A new ISM (image sensor module) WLP (wafer level package) for reflow process is designed, fabricated and tested. The ISM WLP is composed of polymer bonding layer, glass cap wafer for particle free process and CIS (CMOS Image Sensor) chip wafer which has micro via hole interconnection. During the last decades, WLP is highlighted as the next generation ISM Package method for many advantages like high...
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