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A tunable aperture using a metal expansion by Joule's heating which operates when the voltage is applied to two copper metal structures having high thermal resistance is proposed. This aperture has four thermal actuators that can obtain 3D image and distance information in a single camera. The proposed thermal actuator is based on two slightly bent beams that can actuated in directed direction and...
Via last TSV (through silicon via) technology is more and more applied in 3D WLCSP, which can decrease package volume and increase I/O density. The process of via last includes temporary bonding, grinding, photolithograph, silicon etching, SiO2 etching, CVD, PVD, plating and so on. Silicon etching and SiO2 etching are important process of via last TSV package for interconnect technology. Temporary...
In this paper we will discuss a method of fabricating a 0.8um and 1.2um diameter, 10um deep tungsten through-silicon-vias (TSV) from the backside of a 200mm silicon wafer at 4um and 2um pitches. These high-density tungsten TSVs connect to a thin copper backend, such as a metal 1 layer (M1) which can be as thin as 1000Å. We've applied this technology on a CMOS wafer from a high volume foundry and inserted...
High speed interfaces in traditional Printed Circuit Board based systems are based on serial data communication circuits. Serializing and deserializing circuitries are used on two ends of the chips communicating with each other. The channel can be either between modules over a Backplane, between chip packages on PCB or between dies on an interposer. Backplane and PCB based serial communication has...
Electronic power systems follow the general trend of miniaturization and functional density. 3D technologies provide an interesting response if adapted to power specifications. In the framework of the ENIAC JU funded project Enhanced Power Pilot Line (EPPL), a new type of device has been proposed consisting of an H bridge of power transistors and a Si interposer. This paper presents an H bridge of...
Open through silicon vias are direct vertical connections between different integration levels of a chip which provide higher performances per unit area in three-dimensional integrated circuits. The reliability of such structures in integrated circuits constitutes an important issue in microelectronics. This paper deals with electromigration reliability and lifetime evaluation of open copper through...
This paper proposes a combination of annular copper and cylindrical copper as the TSV conductor to decrease the effect of thermal mismatch between copper and silicon in MEMS packaging, which results in a reliability risk between redistribution layer (RDL) and TSV. There are three important factors which may have the most serious influence on the reliability being simulated and analyzed. They are the...
With the anticipated slow-down of Moore's Law in the near future, three-dimensional (3D) packaging of microelectronic structures would enable to further increase the integration density required to meet the forecasted demands of future exa-scale computing, cloud computing, big data systems, cognitive computing, mobile communicatoin and other emerging technologies. Through-silicon vias (TSVs) are a...
In this paper, we present an innovative solution to successfully metallize Through Silicon Vias (TSV) with High Aspect Ratio (10:1). These structures represent a key element in the 3D mid-process integration approach. The metallization consists in depositing, respectively, a diffusion barrier and a seed layer, using two different conformal deposition techniques. The technique used for the barrier...
In this paper, investigation of Parylene-HT for using as insulation/liner in through-silicon-via (TSV) is presented. Bottom-up copper filled TSVs with 1 µm Parylene-HT insulator with aspect ratios (ARs) up to 10, are demonstrated on a 100 µm-thick Si wafer through via etching, parylene vapor deposition, and copper electroplating processes. Cross sectional inspections on the fabricated TSVs confirm...
Through Silicon Via (TSV) plays a key role in accomplishing 3D IC integration. In most common approaches, TSV is filled with copper. Due to large mismatch in Coefficients of Thermal Expansion (CTE) between the copper via and the silicon of TSV, significant thermal stresses will be induced at the interfaces of Cu/dielectric layer (usually SiO2) and dielectric layer/Si, which would lead to various reliability...
Temporary bonding and release processes are regarded as the critical technologies in 2.5D and 3D IC integration. The process is especially challenging when the device contains high topography structures like copper pillar bumps. This paper presents the results of simulation, bumping process, wafer temporary bonding, thinning and debonding. Through careful consideration and optimization of the above...
A three-layer-stacked wafer with CMOS devices was fabricated by using hybrid wafer bonding and backside-via-last TSV (7-µm diameter/25-µm length) processes. Successful fabrication of this wafer confirmed that copper/polymer hybrid wafer bonding brings seamless copper bonding in face-to-face (F2F) and back-to-face (B2F) configurations. The low capacitance of the TSVs results in the highest level of...
Temporary bonding and release processes are regarded as the critical technologies in 2.5D and 3D IC integration. The process is especially challenging when the device contains high topography structures like copper pillar bumps. This paper presents the results of simulation, bumping process, wafer temporary bonding, thinning and debonding. Through careful consideration and optimization of the above...
F2F stacking provides an alternative 3D packaging solution for multi-chip integration without use of TSV. High density interconnection can be achieved with direct Face-to-Face (F2F) stacking to enable high bandwidth die to die interface. Simplified stacking process and lower development cost make F2F stacking an attractive solution for cost sensitive applications. A comparative study of performance...
Polymer low-k materials have been considered in literature to meet the requirements of lowering the dielectric constant of the dielectric layer to decrease the problem of signal delay, lower power consumption, and reduce cross-talk between the neighboring paths, as well as, lower the fabrication temperature budget. In this paper, the feasibility of using Parylene-HT as a low-temperature deposition...
A three-layer-stacked wafer with CMOS devices was fabricated for the first time by using hybrid wafer bonding and backside-via-last TSV (7-μm diameter/25-μm length) processes. Successful fabrication of this wafer confirmed that copper/polymer hybrid wafer bonding brings both seamless copper bonding and void-less underfilling in face-to-face (F2F) and back-to-face (B2F) configurations. The backside-via-last...
This paper compared the filling profile of electroplated Cu in through silicon via (TSV) with different aspect ratio at different current density. The experiment results indicated that bottom-up growth of Cu in TSV was obvious when the current density is 1 mA/cm2 and 3 mA/cm2. When the current density was 6 mA/cm2, the conformal growth of Cu was dominant. When the current density was 12 mA/cm2, the...
3D IC integration based on through silicon vias (TSVs) is expected to provide an alternative technology that can exceed the Moore' Law because of its high packaging density, short signal path, low signal delays. Via filling of conductive materials is regarded as one of the key technologies in the TSV process flow. In this paper, conductive materials such as copper was chosen to fill the TSVs due to...
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