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Conventional text-based information communications may cause misunderstanding particularly in case of a dialog between different generations, gender or cultural background. Intelligent communications may solve these problems by the aid of “happiness sensor” and retrieving additional information of personal record of the counterparts. Breakthroughs necessary to realize the intelligent communications...
This paper presents piezoresistive nanowires based pressure sensor with a novel and low-cost nanowire fabrication technique. Silicon nanowire sensing element (width<100 nm) is chosen because of their higher piezoresistive coefficient compared to bulk silicon and integrated into MEMS diaphragm to measure pressure up to 2 bar. The novelty of the proposed process lies in making nanowires with controllable...
In this work, the electrical isolation of nanowires fabricated on bulk wafers is investigated. It is shown that electrical isolation can be realized with a Ground Plane isolation implant at the beginning of the process flow. For transistors using extensions, it is seen that a relatively high dose of Ground Plane doping is needed in order to avoid punchthrough through a parasitic channel less controlled...
Recently, the outcome of SiNWs had been greatly anticipated because of the remarkable properties including for biomolecules detection. SiNWs had been developed with size reduction lithography to form silicon wires as the final device sensor. The results of the sensor are analyzed to determine surface morphological and electrical behavior of the silicon wires. The relationship between value of the...
The optical excitation effect on the transmission of a terahertz pulse through aligned silver nanowires on a silicon substrate was studied. Terahertz pulses almost pass through the silver nanowires without optical excitation. However, the optically excited sample significantly reduces the transmittance, comparing with the excited silicon substrate only.
An analytical analysis of stress profile in cylindrical nanowires vertically grown on silicon (Si) substrate has been performed. Depending on the lattice-mismatch a tensile stress as high as 1GPa for TiO2 nanowires and a compressive stress of 900MPa for InP nanowires has been obtained. The angular component of stress remains small indicating the nanowires will not be twisted as a result of the substrate-induced...
The effect on the stress profile for more than one nanowire constituting a matrix has been analyzed. There from it has been made evident that substrate as well as process-induced stress, irrespective of its nature, within the basal plane of a single nanowire gets reduced in a cluster of closely packed nanowires.
In this work, we present FEAs based on silicon field emitter tips on top of silicon nanowires with four different device structures: (a) buried tips, (b) buried tips with graphene, (c) released tips, and (d) released tips with graphene. Measured device parameters are used to characterize the performance of the devices. In general, we obtain low turn-on voltages when bFN is low. Additional studies...
As beta-phase gallium oxide is gaining attention for potential application in electronic and optoelectronic devices, this paper addresses techniques for nanowire fabrication that offer the potential for low cost simplicity with the uniformity and reproducibility that are necessary for useful device implementation of these nanowires.
This paper reports the experimental investigation of the impact of vacuum chamber conditions (cleanliness level and vacuum pressure) of scanning electron microscopy (SEM) on the contact resistance of two-point in-situ nanoprobing. Using two typical types of conductive nanoprobe, two-point electrical nanoprobing is performed on silicon nanowires, during which changing trends of the nanoprobing contact...
A dual-nanowire heterostructure with a GeSn layer laterally laying on Ge nanowires is demonstrated by MBE. The strain field analyzed by FEM shows that the novel proposal can significantly release the compressive strain in GeSn for potential direct bandgap conversion as a Si-based light source.
The quasi-ballistic hole transport capabilities of Ge and Si NWs were calculated using atomistic electron-phonon coupling and Boltzmann transport equation. Analyzing the forward and backward current fluxes, it was shown that the positive impact of high mobility of Ge is canceled by its slower energy relaxation, which results in comparable transmission coefficients and current transport capabilities...
Monolithically integrated light sources on silicon are key for future semiconductor microchips that comprise Si CMOS and on-chip optical interconnects as prerequisite for more energy efficient computers and data centres. Recently, major advances were achieved regarding direct integration of III-V gain material on silicon without introducing threading dislocations, especially via heteroepitaxy of semiconductor...
Inorganic nanomaterials such as nanowires (NWs) and nanotubes (NTs) are explored for future flexible electronics applications due to their attributes such as high aspect ratio, enhanced surface-to-volume ratio, prominent mobility and ability to integrate on non-conventional substrates. Device performance of semiconducting NWs are demonstrated to be superior compared to the organic counterparts. Among...
I will give an overview of our recent work on the integration of III-V semiconductor nano-structures on silicon (Si) for electronic devices. The template-assisted selective epitaxy (TASE) used to monolithically integrate high crystal quality III-V nanostructures on Si is introduced. The challenges and recent progress of the development of nanoscale III-V MOSFETs and Tunnel FETs is discussed and a...
Energy harvester is a key device for realizing trillion sensors network society. Thermoelectric generator (TEG) is regarded as the ultimate energy harvester to provide semipermanent power from heat energies via Seebeck effect. The recent discovery of the superior thermoelectric (TE) property of silicon nanowires (Si-NWs) opens the way for Si-based TEGs. In this paper, a very simple device architecture...
This paper gives an overview of several approaches utilizing new parameters and effects, which may be useful for improving the calibration and functionality of nanowire (NW) field-effect transistor (FET) biosensors. We discuss the basic principles of high-speed low-noise Si NW FETs for biosensor applications. We explain the results of a capacitance coupling effect as a consequence of liquid-gate and...
In this work, we used infrared (IR) heating as a new soldering method for the melting and joining of metallic nanowires. IR soldering method is a non-contact soldering method with focused heating area and the soldering process can be done within a few seconds without spreading too much unnecessary heat to the surrounding so as to protect polymer or other low melting temperature or heat sensitive substrates...
SiO2 amorphous nanoparticles have been successfully synthesized on the surface of the SiO2 amorphous nanowires via a thermal evaporation method using SiO powders as the source agents. The as-synthesized products have been systematically studied by X-ray powder diffraction (XRD), Raman spectroscopy (RS), scanning electron microscope (SEM), electron energy-dispersive X-ray (EDX) and photoluminescence...
We propose a wafer-scale technique for nanostructure formation inside vertically oriented, through-membrane nano-pores. It uses 50 nm monocrystalline silicon pillars as a mold, embedded in a silicon nitride membrane formed in an innovative step. The proposed technique paves the way towards advanced functionalization of parallel oriented nano-pores for actuation, sensing, filtering/trapping purposes.
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