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Solder joint crack is increasing with increasing of warpage caused by larger Wafer Level Chip Size Package (WLCSP). Bump Support Film (BSF) were proposed as a protect material for preventing a solder joint crack of bumps. The BSF was constructed of a back grind tape and Bump Support Layer (BSL) which was composed of thermosetting epoxy resin. One of the key points of forming the BSL on a wafer which...
In this paper, wafer level transfer of graphene on to a dielectric substrate is demonstrated based on SiO2-SiO2 fusion bonding and de-bonding processes. The developed technique allows to transfer graphene on 200 mm wafer without any contamination; thus CMOS compatible. The experimental data verifies the successful transfer of the graphene on to another substrate with high quality and a yield value...
In this paper, we described a miniaturized microfluidic device able to electro-loading small volumes (200nl) of biologic samples via ElectroWetting on Dielectric (EWoD) actuation and detect DNA via polymerase chain reaction (PCR). The miniaturized silicon-based chip contains 48 microchambers properly chemically treated for EWOD process. The device was designed to contain also integrated temperature...
In this paper capabilities of electrical discharge plasma and laser irradiation processes in liquids for synthesis of nanoparticles (NPs) of different morphology and composition are discussed. The main attention has been focused on the properties of carbon, silicon, as well as alloyed and composite NPs. Particles with size in the nanometric range (3–50 nm) with different crystal structures were produced...
We applied terahertz (THz) time-domain spectroscopy (THz-TDS) to reveal the mechanism of the relativistic Doppler reflection of THz light from a photo-induced plasma front in a silicon wafer. The frequency up-shift caused by the Doppler reflection was identified by measurement of the reflected THz waveforms and compared to the calculated results obtained using the one-dimensional finite-difference...
Hyperglycemia is common in critically ill patients and leads to several severe complications and even death. Although it is shown that keeping blood glucose within the range of 80–110 mg/dL (4.4–6.1 mmol/L) reduces mortality and morbidity in intensive care unit, it is not easy to maintain glycemia within that range due to the time variability of insulin sensitivity in critically ill patients. In this...
We report deep reactive ion etching of silicon gratings via cryogenic and Bosch processes. An aspect ratio of > 50 is achieved for 400 nm period gratings with both processes.
In this paper, we propose a Si/GaAs based dopingless heterostructure TFET (DHTFET). Instead of using silicon-drain as in conventional dopingless TFET, GaAs is used to replace the drain region. Using charge plasma concept, source and drain regions are obtained on intrinsically doped Si/GaAs body. With the help of 2D simulation study, we report that the proposed Si/GaAs DHTFET exhibits full ambipolar...
We design and fabricate a silicon based 1×2 optical switch based on the free-carrier plasma dispersion effect, with a Mach-Zehnder interferometer structure on silicon-on-insulator (SOI) wafer. The experimental result shows that it has an extinction ratio of 21.8 dB at 1546 nm, which meets the requirements of the most applications in optical telecommunication networks.
This paper reports the development of electrically conductive, polymer nanofibers fabricated by electrospinning and electroless copper plating. The electrospun nanofibers were made using a precursor consisting of styrene-isoprene-styrene (SIS) block copolymer and silver trifluoroacetate. For process development and materials characterization, the fibers were electrospun as a thin membrane on glass...
We report the first experimental results on multi-keV X-ray generation from relativistic laser-solid interaction using a mid-IR (3.9 μm) high power femtosecond laser source and nanostructured solid targets. Regimes of relativistic laser-plasma interaction with a long wavelength driver qualitatively differ from experiments with conventional near-IR or visible laser sources. The dynamics of the laser-particle...
All-dielectric nanophotonics based on high-index dielectric nanoparticles became a powerful platform for modern light science, providing many fascinating applications, including high-efficient nanoantennas and metamaterials. High-index dielectric nanostructures are of a special interest for nonlinear nanophotonics, where they demonstrate special types of optical nonlinearity, such as electron-hole...
The increasing demand for higher performance of ULSI circuits requires aggressive shrinkage of device feature sizes in accordance with Moore's law. Plasma processing plays an important role in achieving fine patterns with anisotropic features in metal-oxide-semiconductor field-effect transistors (MOSFETs). Despite advancements in plasma processing, the degradation of material properties due to plasma...
Advanced inductively coupled plasma techniques and surface treatments have been used to demonstrate 5 nm conformal shallow junctions at low energy with no structure damage for both silicon (Si) and germanium (Ge). N-type PH3 plasma-assisted doping was characterized by dopant diffusion and electrical activation with increasing wafer temperature. Plasma-assisted doping at high wafer temperature showed...
Ion implantation and plasma etching are essential process steps for manufacturing semiconductor devices. The damage created by those process steps degrades device characteristics and reliability. Therefore, it is necessary to minimize the damage. The damage structure created by ion implantation is reconstructed during an annealing step, and p-n junction is formed as designed in advance. On the other...
Comprehensive investigations were conducted on identifying integration efforts needed to adapt plasma dicing technology in BEOL pre-production environments. First, the authors identified the suitable process flows. Within the process flow, laser grooving before plasma dicing was shown to be a key unit process to control resulting die sidewall quality. Significant improvement on laser grooving quality...
Plasma Dicing uses Deep Reactive Ion Etch (DRIE), also known as The Bosch Process. This is a well-established "front-end" technology, used in silicon MEMS micromachining and via etching in 3D packaging, which is now finding a new home as a dicing technology in the "back-end" of semiconductor processing. This paper will discuss the key issues and integration challenges. This is...
This paper presents the methods of eliminating the plasma-induced Si substrate damage in periphery regions, resulting from high aspect ratio etching process for 3D NAND fabrication. The impact of Si substrate damage is verified by the low and high bias power experiments. The result indicates more Si damage is present with high energy bombardment; therefore, high bias power is recommended to be inhibited...
A chronic NPN Bipolar ICEO leakage failure mode on a BiCMOS (B+) process was revealed to be caused by marginality in the CMOS oxide spacer film deposition process. It has been shown that residual carbon in the PETEOS spacer oxide film generated defects at the collector/base interface. These defects prevented epitaxial growth of the base region. The defects and ICEO leakage were eliminated by modifying...
Plasma profiling time-of-flight mass spectrometry (PP-TOFMS) is studied for microelectronics applications. Comparative studies with secondary ion time-of-flight mass spectrometry (TOF-SIMS) are presented. PP-TOFMS delivers similar depth-resolved composition information as TOF-SIMS but much faster. For example PP-TOFMS allows assessing the formation of silicides over few nanometers upon annealing of...
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