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Systems integration (SI) in healthcare uses an enterprise application integration (EAI) or middleware layer to allow disjoint systems on various platforms to exchange information. Health Level 7 (HL7) is the communication exchange standard used in healthcare for this purpose. The message structure and usage of HL7 is standardized but the implementation of HL7 is widely customized to fit specific system,...
In this paper, we propose a Si/GaAs based dopingless heterostructure TFET (DHTFET). Instead of using silicon-drain as in conventional dopingless TFET, GaAs is used to replace the drain region. Using charge plasma concept, source and drain regions are obtained on intrinsically doped Si/GaAs body. With the help of 2D simulation study, we report that the proposed Si/GaAs DHTFET exhibits full ambipolar...
We fabricated a high performance electron beam for the vacuum electronic devices with carbon nanotube (CNT) cathode. For the vacuum electronic devices application, a structure of cold cathode should be highly adhere on cathode substrate and endure a resistive heating during electron emission. For fabrication of stable electron beam, we optimized the CNT emitters and the triode structure. The structural...
In this paper, we report the simulation of high doping nanoscale heterojunction diode, particularly Si1−xGex/Si p-n diode, using Cogenda Visual TCAD. In order to gain knowledge on electrical properties of this diode, we exhaustively simulate the effect of Ge mole fraction in SiGe material on current, voltage and electric field characteristics. The simulation covers Ge mole fraction of 0.2 to 0.7 in...
Recently, thermal problem of electronics is becoming more serious, because electronic devices have been downsizing. Especially, since very high electrical field generates in power devices, it is possible that nano-micro scale high temperature hot spots appear in the device. The hot spot temperature has an impact on performance of electronics, and the hot spot has potential of malfunctioning of the...
The objective of the proposed system is to develop an adaptive iterative linear regression (ILR) based clustering for wireless sensor network. ILR classifies the initial cluster simultaneously in horizontal and vertical patterns to form two sub clusters. Among these two, the best is selected based on similarity index (SI). This selected cluster is taken as reference and the iteration continues until...
In this work, we study the impact of Si and Al implantation on the current conduction mechanisms and operation of 1T-1R TiN/HfO2/Ti/TiN based ReRAM devices. The pre-forming current and forming voltage evolution clearly reveal different trends as a function of the implanted dose and species. We link our results to the microscopic structure of the material using a first principles approach.
Self-propagating exothermic reaction of Al/Ni multilayer film has been developed as a heat source with small heat region and high reaction rate in the field of bonding. In this paper, using this kind of localized and rapid heat source, solder preforms with different melting point such as SAC305 (217°C), Au80Sn20 (278°C) and A88Ge12 (356°C) have been applied to achieve the Si/Si bonding includes stacked...
Effects of Ar beam irradiated during the surface-activated bonding process on n-Si and p-Si based Schottky barrier diodes (SBDs) were investigated by atomic force microscope measurements. Charges in the electrical characteristics of SBDs were attributed to the variation in Schottky barrier heights due to the Ar beam irradiation.
We successfully fabricated Al-foil/p-Si junctions by surface activated bonding (SAB). We found that the junctions revealed Schottky properties by measuring their current-voltage characteristics. We also found that the reverse-bias current of the junctions was decreased, i.e., their electrical characteristics were improved by annealing at temperatures below 200 °C. These results demonstrate that the...
This paper presents an analytic approach to obtain the optimum source and load impedance values for different criteria of maximum power gain, linearity and efficiency. A comparison of two identically rated commercially available 25W RF power transistors in silicon LDMOS and GaN-on-Si HEMT reveals that GaN HEMTs are relatively immune to optimization criteria popularly used by RF amplifier designers,...
The Radio Frequency Micro-electromechanical system (RF MEMS) has compact geometries and are very used in Monolithic Microwave Integrate Circuit (MMIC) for different important applications with respect to their size and their effectiveness. Its effectiveness can be improved by reducing the ElectroMagnetic Interference EMI problem with better Electromagnetic compatibility EMC immunity of the component...
We for the first time evaluate the 3-nm gate Length (LG=3nm) inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode Silicon bulk FinFET performance with optimized nano-fin structure (FW=FH=3nm) using 3-D quantum transport device simulation. The excellent electrical characteristics of LG=3nm Si bulk FinFET are reported. The sub threshold slope values (SS∼65mV/dec.) and drain-induced...
More and more people are watching video over internet using connected devices such as smartphone, and internet traffic is being burst. In order to deal with these environments, technical development and standardization on RF/PON transmission system have been carried out. For commercialization, RF/PON transmission system is designed to accommodate the connected device as a new means to serve broadcast...
The electrical properties of n+-Si/n-GaN junctions by room-temperature bonding were investigated. The n+-Si/n-GaN junctions exhibited linear current-voltage characteristics.
We investigated the electrical properties of highly-doped n-Si/n-Si and p-Si/p-Si junctions fabricated by using the surface activated bonding. Heights of potential barrier formed at the respective bonding interface were estimated by measuring dependence of their current-voltage characteristics on the ambient temperature. The heights of barrier were found to be varied due to annealing often the bonding...
Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe itself...
In this work, we investigate a transparent conducting oxide (TCO)-based, passivated contact for the potential use as a passivated tunnel contact to p-type Si. As a surface passivation layer, the Al2O3 films with varying the thickness are deposited using plasma-enhanced atomic layer deposition (PEALD) at 200 °C, followed by post-deposition annealing. For a ∼15 nm thick Al2O3 layer, a high level of...
In central inverter based photovoltaic (PV) plants, critical functions such as maximum power point tracking (MPPT) are performed on the aggregate I–V curve of all of the PV modules. The disadvantage of this approach is its inability to optimize overall output power when the operating conditions vary from one PV module to another, due to module differences (e.g. mismatch, layout, …) and shading effects...
The ballistic performance of Si and Ge nanowire (NW) is compared in this study. Channel length and diameter of the NW is taken to be 12 nm and 3 nm respectively. Current-Voltage characteristic is obtained by self-consistently solving the Non Equilibrium Greens Function (NEGF) transport equation with Poisson's equation. The result is obtained at <001> channel orientation. Simulation result...
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