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The paper presents an application of magnetic amorphous materials in wire form for measuring deformation. The device is actually a strain gage exhibiting a very high sensitivity, whose principle of operation is based on the stressimpedance effect occurring in magnetic amorphous microwires. The manufacturing technology of the device, as well as its functional characteristics and a variant of signal...
This paper presents a compensation method for the stress dependence of flexible integrated capacitive pressure sensors. Without compensation the differentiation between changes in the sensor signal due to pressure or bending cannot be made [1]. To achieve this requirement a complex back side structuring of thinned capacitive pressure sensors is conducted in preparation for simulations and pressure...
The lifetime of power DMOS devices subjected to Thermal Induced Plastic Metal Deformation (TPMD) is highly dependent on the design of the metallization systems and thus requires the understanding of temperature, stress and strain distribution. This paper introduces and studies via numerical simulations with finite element method (FEM) a simple three dimensional (3D) transistor substructure commonly...
3D Finite Element ensemble Monte Carlo simulations with integrated 2D Schrödinger Equation quantum corrections are employed to forecast the performance of scaled Si gate-all-around (GAA) nanowire (NW) FETs with unstrained/strained channel. The results from the 3D MC toolbox were compared against experimental I-V characteristics of a 22 nm gate length GAA NW FET with excellent agreement. The NW FET...
Recent research progresses on dopant diffusion and segregation, Si-Ge interdiffusion and defect engineering in SiGe material systems are reviewed, which are relevant to SiGe-based semiconductor devices including SiGe PNP hetero-junction bipolar transistors, metal-oxide-semiconductor field-effect transistors, and Ge-on-Si lasers. Experiment data and continuum modeling are discussed.
A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simulator. The inversion charge model with Germanium fraction is formulated using a unified charge model. These characterization studies are performed to investigate...
Bonding front propagation driven by the work of adhesion is restricted by the air drag and mechanical deformation of wafers. Energy variation during room temperature bonding can influence the bonding initiation and front propagation dramatically. In order to evaluate the dissipated energy and elastic strain energy resulting from the air cushion and the wafer bow, both theoretical and finite element...
This work proposes and describes in details a complete setup solution for testing of non-encapsulated electronic devices under mechanical stress. The equipment was implemented and calibrated to later use in electrical characterization of devices, such as MOSFETs and diodes under controlled mechanical stress. The semiconductor bending equipment allows the electrical characterization of devices using...
We present a unique lateral bulk resonance mode with a lateral strain profile that resembles a shirt button that we transduce piezoelectrically in a MEMS disk resonator. This button-like (BL) mode offers the 3-fold benefits of (1) intrinsic feedthrough cancellation using fully-differential transduction, (2) strong piezoelectric coupling from the associated strain profile, and (3) higher quality (Q)...
In this presentation we will demonstrate how it is possible to compute properties of Sii-xGex alloys, using modern first-principles approaches which provide values for the band gaps in the entire range 0 ≤ x ≤ 1, as well as effective masses for Si and Ge (also when strain is applied) which all are in excellent agreement with experiments. These benchmarks show that appropriately chosen DFT methods...
In this work it is showed that compressively strained Ge1−xSnx/Ge quantum wells (QWs) grown on a Ge virtual substrate are very promising TE mode gain medium. Moreover we show how emission wavelength and polarization can be controlled in Ge1−wSnw/SiyGe1−x−ySnx QWs. Demonstration of capabilities of presented QW systems bases on analysis of transverse electric (TE) and transverse magnetic (TM) modes...
This paper presents two mechanisms to enable jumping microrobots. These small jumpers must store considerable mechanical energy and quickly release it. The first mechanism presented is a mechanical gain stage capable of amplifying the force generated by a standard inchworm motor by at least 10 times. This mechanism could be used with any style of inchworm motor. Secondly, a latching mechanism was...
We present a variational study of direct transitions in GeSn/Ge quantum well system for photonic applications. The exciton radiuses, binding energies, and oscillator strengths are calculated for various Sn contents are calculated and discussed.
In our recent work we have shown that the compressively stained GeSn/Ge quantum well (QW) is a very promising gain medium for lasers integrated with Si platform [1]. The material gain for such QW can be tuned in broad spectral range which is interesting for gas sensing [1]. Since Ge1−wSnw QW can be integrated with Si platform via Ge1−zSnz virtual substrate it is also possible to grown tensile strained...
This work investigates performance of strain balanced SiGeSn/GeSn multi quantum well infrared photodetector by numerical analysis. Expression of responsivity is obtained by solving rate equation and continuity equation at steady state considering carrier transport mechanism across multiple well-barrier interfaces. The result shows a significant responsivity is achieved in mid-IR wavelength region...
A dual-nanowire heterostructure with a GeSn layer laterally laying on Ge nanowires is demonstrated by MBE. The strain field analyzed by FEM shows that the novel proposal can significantly release the compressive strain in GeSn for potential direct bandgap conversion as a Si-based light source.
Atomic force microscope (AFM) cantilevers with integrated actuation and sensing provide several distinct advantages over conventional cantilever instrumentation such as clean frequency responses, the possibility of down-scaling and parallelization to cantilever arrays as well as the absence of optical interferences. However, for multifrequency AFM techniques involving higher eigenmodes of the cantilever,...
Ultra-thin wafer (thickness <100 µm) gripper is a challenging component to design since the wafer is one of the thinnest and fragile materials. In this paper, a soft acting non-contact gripper based on the distributed Bernoulli principle for ultra-thin wafer is developed and evaluated. The theoretical analysis and experimental studies of the designed gripper are carried out. The effects of the...
We report high performance extremely-thin-body (ETB) Ge-on-Insulator (GOI) pMOSFETs fabricated by a new Ge condensation process with minimized temperature cycles and slow cooling-down rate. This new condensation process effectively suppresses strain relaxation during Ge condensation and creates high compressive strain. By combining the highly-strained GOI substrates with a digital etching process,...
We investigate the mechanism of interfacial layer formation on Si1−xGex (0 < x < 0.5) channel and its correlation to hole mobility. It is found that the mobility degradation in low-Ge-content Si1−xGex (x < 0.2) pFETs is attributed to a Ge-rich top surface in the channel directly induced by interfacial layer formation. In addition, the depth profile of a Si-rich top surface in high-Ge-content...
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