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An inherent variable stiffness approach was proposed to suppress the rebound and impact of the electrostatic switch due to waveform deviations. A simple clamped-guided beam spring with large deflection, which generated inherent cubic nonlinear restoring force, was adopted for implementation of the approach. The initial stiffness is very small but increases significantly with the displacement. In this...
Post-arc current significantly influences the interrupting process of breakers, which can reflect the appearance of the arc before current zero and the residual metal vapors in electrode distance after current zero. In order to investigate the characteristics of post-arc current in DC interruption, a high speed hybrid actuator was designed, and forced current zero method was used to carry out the...
With the development of new energy, DC system is widely applied in urban rail, ships and other fields. H2-N2 mixed gas switch has been one of the effective methods to interrupt direct circuit current for its large breaking capacity and small volume. In order to study the arc characteristics of H2-N2 mixed gas switch, a detachable interrupter is designed. The arc voltampere characteristics of H2-N2...
Microbial fuel cells (MFCs) are sources harvesting energy from organic matters and showing great promise in powering environmental sensors. Because of the low power and voltage issues (100μW at 0.3V for 20 cm2 electrodes), an electrical interface is required to extract the maximum power delivered by the MFC and boost the output voltage. However the switching operation of most converters induces a...
Both experimental and numerical approaches have been done on switching arc plasmas for fundamental studies. In the experimental approaches, power-semiconductor switching has been used to control intentional current injections and voltage applications to switching arcs with a high accuracy in time. The systematic experiments provided the interruption probability property for different gas kinds and...
MoO3−x-based Transition Metal Oxide Resistive Random Access Memory (ReRAM) devices were fabricated using atomic layer deposition, and their resistance-switching behaviors were investigated. The bipolar phenomenon was observed when 100-nm-thick Au were deposited by electron beam evaporation as bottom electrode (BE) and top electrode (TE), respectively. The proper electrical properties, such as excellent...
Organometal halide perovskite material was investigated as a promising candidate for resistive random-access memory (RRAM). In order to improve the stability of perovskite RRAM, a polymethyl methacrylate (PMMA) interlayer was inserted between perovskite and metal electrode. High ON-OFF current ratio (106) and operating voltage as low as 0.5 V were achieved in the PMMA encapsulated perovskite RRAM.
The bipolar resistive switching properties of the CBRAM device are investigated for nonvolatile memory applications in a SiO2/ZrO2/SiO2 structure. The device shows good switching characteristics with set/reset voltages less than + 1 V/−1 V with a variation of less than 0.2 V. The SiO2/ZrO2/SiO2 tri-layer CBRAM device exhibits excellent memory performances, such as stable DC endurance up to 103 cycles...
Ejected plasma used in gas spark switch has been proved efficient as a trigger method. However, the development and trigger mechanism are still to be revealed. In this paper, an experimental platform was built to investigate the influence of trigger pulse energy and polarity on the space-time shape evolution characteristics and the ejecting characteristic of ejected plasma. The results indicate that...
Bioelectrical impedance analysis (BIA) is one method of measuring body fat levels by distinguishing the fat mass and non-fat mass based on body composition assessment. This research designs a system to measure the body fat percentage by BIA method. The system is capable of measuring BIA with automatic switching between four different electrode schemes, i.e cross-sectional, hand-to-hand, hand-to-foot,...
Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. In this work, we fabricated several HfOx ReRAM devices with different structure, material, and thickness, followed by a study of their electrical...
Recently it was demonstrated that an asymmetric DRAM capacitor stack can introduce non-volatility and at the same time outperform ferroelectric HfO2 based FeRAM in terms of cycle endurance. With the present work, we provide an in-depth study of the underlying mechanisms and perform a comprehensive retention study that characterizes ferroelectric memories. Piezoelectric force microscopy is applied...
A compact model for the low and high resistance state conduction characteristics of electroformed capacitors with hexagonal boron nitride (A-BN) as insulator material and with multi-layer graphene and metal electrodes is presented. The model arises from an approximation of the expression for multi-filamentary electron transport with parabolic shaped constrictions. The model takes into account the...
Redox-based resistive switching devices can be switched between a high resistance state and a low resistance state in a reversible manner. An important requirement is the stable operation between these two states for a high amount of switching cycles. In this work the switching dynamics of these devices are investigated by means of device simulation. Hereby, we discuss the conditions for which a fading...
A very important aspect in the design of RF-MEMS switches, is to obtain low switching time. The switching time not only depends on the device geometric parameters but also on the operating conditions. This paper presents the squeeze film damping effect on the dynamic response of the RF-MEMS switches. The squeeze film damping effect, with and without perforations, on the switching time is analyzed...
This paper presents a novel architecture for a kilo-ohm to giga-ohm pseudo-resistor (PR), based on transistors operating in subthreshold with a fixed-Vgs configuration. This PR when used in an RC filter has a very low and constant settling time regardless of the programmed pole frequency. The proposed PR takes advantage of bootstrapping to improve its tuning range. By defining a constant VGs for the...
As the use of tablet computers and cell phones has become a standard medium of access to information, entertainment, and communication around the world, the reliance on having access to such devices has increased tremendously. For individuals with quadriplegia or neurodegenerative diseases, the access to these mobile devices is greatly hindered due to their inherent touchscreen design. Assistive technology...
In this paper, we outline the performance enhancement at low current (10 μA) introduced by implementing CBRAM devices were the solid electrolyte is made of two layers with different Cu mobility, enabling to form a hourglass-shaped conductive filament. With such a filament configuration, the CBRAM devices combine a large memory window with high writing speed (10 ns) and a write endurance of 106 cycles,...
The physical principle of redox based resistive switching memory cells is based on ionic and electronic transport propertips. Both normally reveal a strong temperature dependence. A novel heating setup enables to study the influence of high temperatures on the switching mechanism of these memories. It consists of a 100 nm-wide Pt heating line and includes a Pt/Ta2O5/Ta-based ReRAM cell. It is heated...
Arc faults are a fire-safety risk in both AC (alternating current) and DC wiring, but reliable detection of arc faults and determining the appropriate response is particularly difficult in DC plug-load circuits. This paper presents the development of AFCI lab setup to characterize DC arc current in DC circuits operating at 24-80 volts. The process to characterize the arc current utilizes the frequency...
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