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The degradation mechanism of 808 nm GaAs-based high-power laser diode bars (LDBs) which has 47 single laser diodes is investigated using infrared thermography, focused ion beam, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy techniques. We obtained the temperature distribution of the output facet and the results indicate that emitter 24, which is located...
In this paper, Spread Spectrum Time Domain Reflectometry (SSTDR) has been implemented for the first time across the gate and the source of a power metal oxide semiconductor field effect transistor (MOSFET) to perform the online degradation monitoring of switching devices as well as the overall converter. To accomplish this, the SSTDR test signal is superimposed with the pulse width modulated (PWM)...
Degradation prediction is important for safety related products to avoid failures. When the degradations of multiple parameters of a product is taken into account, traditional univariate degradation prediction method is not applicable, especially when the parameters are correlated. To cope with this problem, Mahalanobis distance is proposed, to combine multiple parameters into one unified index. Then...
According to the character of long-term repairable storage systems, a method for estimation and optimization of storage availability is presented. Such system experiences two storage periods, cold storage period and hot storage period. According to the different inspection methods of the two periods, we established the storage models based on periodic inspection and continuous inspection respectively,...
The evolution of convolutional neural networks (CNNs) into more complex forms of organization, with additional layers, larger convolutions and increasing connections, established the state-of-the-art in terms of accuracy errors for detection and classification challenges in images. Moreover, as they evolved to a point where Gigabytes of memory are required for their operation, we have reached a stage...
A GaN-on-Si power device is a strong candidate to replace power components based on silicon in high-end market for low-voltage applications, thanks to its electrical characteristics. To maximize opportunities of the GaN device in field applications, a package technology plays an important role in a discrete GaN power device. A few specialized package technologies having very lower stray inductance...
The emerging 650 V large current rating, Enhancement-mode (E-mode) Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) is a promising device for low to medium power, high power density converters (e.g., motor drives, battery chargers), which require high robustness levels. Thus, a comprehensive study of the short circuit behavior of high power E-mode GaN HEMT is the subject of this paper...
Degradation reliability prediction under stochastic failure threshold is studied. The explicit expression of reliability is derived, by charactering the uncertainty of failure threshold with probability distribution. Then, a possibilistic approach for reliability modeling and prediction for degrading components is presented, by use of possibility distribution.
To analysis the reliability of the permanent magnetic actuator, the life test of permanent magnetic actuator is carried out and the related parameters are measured. Traditional reliability evaluations are generally based on the failure life data. Due to the small samples of the life test, the performance degradation method is applied in this paper. By analyzing the degradation path of the related...
A reliability study under high RF power stressing was conducted on two SiGe cascode Low Noise Amplifiers (LNA) using an in-house reliability tool. The first LNA was stressed at 19 dBm of RF power during 600 hours. Obtained results (relative degradation values in dB) showed a decrease of 11% in the small-signal gain (S21), while the second was stressed at 20 dBm of RF power during non-stop 600 hours...
This paper presents a novel subthreshold Darlington pair based negative bias temperature instability (NBTI) monitoring sensor under the stress conditions. The Darlington pair used in the circuit provides the stability of the circuit and the high input impedance of the circuit makes it less affected by the PVT variations. The proposed sensor provides the high degree of linearity and sensitivity under...
Electrical energy obtained from state-owned electricity company is often can not fulfill the electrical energy required by the industry during peak load. Another problem that industry faced is the availability of electrical energy supply is not continuous. Solution to this problem, the industry needs another source of electrical energy so the availability of electrical energy can be achieved. This...
We have demonstrated 1200V and 3300V planar 4H-SiC MOSFET technology at our 6-inch foundry. 1200V MOSFETs demonstrate good avalanche ruggedness under single-and one million (1,000,000) repetitive unclamped inductive switching (UIS) pulse tests. 1200V MOSFETs can pass one hundred (100) 10 microsecond short-circuit events at 600V bus voltage, while 3300V MOSFETs can pass 5 microsecond short-circuit...
Consider the problem of H2 filtering of a linear system in a networked control system scenario. More precisely, the communication between the system and the filter is accomplished through a multi-hop network where packet loss, modeled by a Markov chain with a Bernoulli distribution, may occur. The purpose of this paper is to investigate the trade-off between the network resource saving and the performance...
In this contribution, impact of extreme environmental conditions in terms of energy-level radiation of protons on SiGe integrated circuits is experimentally studied. Canonical representative structures including linear (passive interconnects/antennas) and non-linear (Low Noise Amplifiers) are used as carriers for assessing impact of aggressive stress conditions on their performances. Perspectives...
An analysis of the degradation occurred in RF life-tests of n-type MOSFETs operated from pulsed bench for a radar application in S-band is introduced. The analysis comes accompanied with experimental results, which are used to facilitate optimization of the robustness of Power RF MOSFETs. The recorded S-parameters before and after degradation allows the observation of the corresponding changes in...
Comprehending material, technology and design interaction with key reliability metrics is becoming critical to ensure successful product introduction with continued scaling beyond 10nm. This paper summarizes the key challenges for reliability and its implication for the design/technology co-optimization. Building in reliability requires a detailed understanding of material properties, device architecture...
Battery energy storage (BES) is an indispensable resource in stand-alone microgrids. A reliable and cost effective microgrid operation can be achieved when the BES is optimally designed and deployed. The BES lifetime, however, is greatly impacted by its operation where two important operation factors must be considered to prolong its lifetime, namely the depth of discharge and the number of cycles...
Through ever changing terms and regulations on fuel consumption and emissions, weight becomes the number one concern of car manufacturers. Meeting those new regulations and the customer's desire for more options and variations is only possible without adding more weight by changing the wiring harnesses' technology. One solution to face this problem can be found by the application of flexible flat...
The Capacitive Micromachined Ultrasound Transducer (CMUT) technology has been under development for more than 20 years at Universities and industry labs. One of the major limitations for commercial use of CMUT probes has been poor reliability. Kolo Medical Inc. has developed a number of methods to improve reliability of CMUT probes. Kolo performed long term reliability tests to verify the improvements...
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