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Reliability testing has become extremely important in modern electronics as the soft error rate has been increasing due to technology scaling. The testing must be controllable, generic, done before deployment, cheap, and fast. Even though fault injection is often the most appropriate solution considering these requirements, it is very time-consuming. This work proposes a hybrid fault injection framework...
With the rapid advances in IoT technologies, the role of IoT gateways becomes even more important. Therefore, improving the reliability, availability and serviceability (RAS) of IoT gateways is crucial. Nowadays, Linux is widely adopted for core enterprise systems not only because it is a free operating system but also because it offers advantages in regards to operational stability. With many Linux...
Active Thermal Control (ATC) consists in driving power switches in a less efficient way when low load conditions are present. The resulting wasted power is used to self-heat the device, reducing amplitude and occurrence of thermal cycles and hence improving the reliability. This paper presents a novel way to control losses, and hence temperature, of both positive- and negative-current devices in half-bridge...
This paper proposes an Active Thermal Control (ATC) method for MOS-gated power switches aimed at reducing temperature swing amplitude during operation. It leverages on the fact that thermal cycle amplitude of many actuation system components (such as power devices) has a large impact on the system reliability and lifetime. These figures can then be improved, which eases the adoption of electrification...
Fault tree analysis (FTA) is a prominent reliability analysis method widely used in safety-critical industries. Computing minimal cut sets (MCSs), i.e., finding all the smallest combination of basic events that result in the top level event, plays a fundamental role in FTA. Classical methods have been proposed based on manipulation of boolean expressions of fault trees and Binary Decision Diagrams...
MODBUS is still one of the most widespread application layer protocols used in industrial communication due to its simple request-response communication session and its readiness to be implemented on top of several lower level communication protocols and various physical media such as RS232/RS485 serial lines and Ethernet TCP/IP. Given the well-known inclination of Modbus to inter-networking, a solution...
Since radio links in wireless body area networks (WBANs) commonly experience highly time-varying attenuation due to topology instability, communication protocols with fixed transmission power cannot produce a very good performance in terms of energy consumption, interference range, and communication reliability. We explain that how channel behaviourcan be modelled using Markov Chain. Then, a power-adaptive...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency than their Silicon (Si) counterparts for 200–1.2kV rated applications. The benefits of GaN technologies and their market potential will be highlighted in this paper together with the main challenges that GaN-based power systems need to overcome to reach their full potential and finally enter the market...
Owing to the high current density but smaller die area of SiC components, high current SiC power modules typically feature a large number of parallel connected dies. Due to the faster electrical dynamics of these power modules, and the inherent mismatch of properties between the dies, certain dies can be poorly utilized — requiring either more dies to achieve a given current rating or a de-rating...
The emerging 650 V large current rating, Enhancement-mode (E-mode) Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) is a promising device for low to medium power, high power density converters (e.g., motor drives, battery chargers), which require high robustness levels. Thus, a comprehensive study of the short circuit behavior of high power E-mode GaN HEMT is the subject of this paper...
Automation of modern industrial plants require real-time tracking of object locations and sensing of local and ambient parameters for variety of applications such as counting and tracking of objects in assembly line, detection and positioning of failures of machines etc. Mostly, discrete Real Time Location System (RTLS) performs object tracking in existing industrial automation without its integration...
This paper presents an energy-efficient solution to overcome packet loss in Wireless Sensor Networks (WSNs) by adding seed-based Random Linear Network Coding to MQTT for Sensor Networks (MQTT-SN). Whereas most sensors integrated in common WSN devices consume little energy, using the radio is costly. To increase battery lifetime, devices try to minimize their radio uptime, while still satisfy timeliness...
A Physical Unclonable Function (PUF) is a random cryptographic function which could be implemented using a complex process-based physical system. PUF is a good inexpensive candidate for producing signature keys for cloud-based reliable communication within Internet of Things (IoT) devices in future. PUF made from on-chip Ring Oscillator (RO) is popular due to random physically induced frequency behavior...
We have demonstrated 1200V and 3300V planar 4H-SiC MOSFET technology at our 6-inch foundry. 1200V MOSFETs demonstrate good avalanche ruggedness under single-and one million (1,000,000) repetitive unclamped inductive switching (UIS) pulse tests. 1200V MOSFETs can pass one hundred (100) 10 microsecond short-circuit events at 600V bus voltage, while 3300V MOSFETs can pass 5 microsecond short-circuit...
This presents DC electrical characteristics and reliabilities of AlGaN/GaN metal-oxide-semiconductor heterojunction-field-effect transistors (MOS-HFETs) with HfO2 gate dielectric deposited by atomic layer deposition (ALD). Two types of oxidants were investigated, namely, water (H2O) and ozone (O3) for the ALD deposition. The comparison study reveals that GaN MOSHFETs with O3 oxidant results in overall...
In this paper, key aspects of silicon-carbide (SiC)-based automotive traction drives are reviewed. Firstly, the required supporting factors to achieve optimal operating conditions and best performance are described. Major component sizing methodologies and constraints are included. Expectations on gate threshold voltage, trans-conductance, and transient oscillation are discussed. Tolerance against...
In this paper, we present an 880 MHz common-drain power amplifier (CDPA) in 130 nm CMOS technology. New PA topologies are required to address the issues of linearity, reliability, and efficiency. The CDPA is one such promising topology. Owing to the inherent feedback nature of a CDPA, the output voltage is a replica of input voltage, thus making the CDPA a highly linear amplifier with good efficiency...
In this paper, we present an 880 MHz common-drain power amplifier (CDPA) in 130 nm CMOS technology. New PA topologies are required to address the issues of linearity, reliability, and efficiency. The CDPA is one such promising topology. Owing to the inherent feedback nature of a CDPA, the output voltage is a replica of input voltage, thus making the CDPA a highly linear amplifier with good efficiency...
Silicon Carbide (SiC) diodes are already commercially available since 15 years and have gained significant market share in power supply and solar converter applications. In the last few years, the SiC device family was enriched by switches. They become increasingly more important for differentiation of power converters in size, weight and/or efficiency. The dedicated material properties of SiC enable...
Comprehending material, technology and design interaction with key reliability metrics is becoming critical to ensure successful product introduction with continued scaling beyond 10nm. This paper summarizes the key challenges for reliability and its implication for the design/technology co-optimization. Building in reliability requires a detailed understanding of material properties, device architecture...
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