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The paper concerns ferroelectric film features and their application in the field of memory ICs design. The results of FRAM test memory cells irradiation are shown and discussed. The current responses of the memory cells are presented as well as the calculated value of polarization The measurement complex used during the experiment is described.
This paper presents the system that allows SEFI modelling by means of injecting upsets in different microcontroller memory blocks, carrying out its functional control and detect the moment when SEFI occurs. Test setup was developed on the basis of National Instruments PXI modular equipment and LabVIEW software. Developed fault injection system was tested on PIC17 microcontroller. The comparison between...
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