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In this paper, a new LDMOS on silicon-on-insulator (SOI) with homo-type fixed interface charges in the bottom of field oxide layer is proposed. The surface electric field can be improved by adding the fixed interface charges and optimizing the doping profile, which can effectively modulate electric field to obtain the optimization trade-off between the breakdown voltage and on-resistance. The numerical...
There is a demand to further improve upon performance parameter of particle detectors for high luminosity applications. Higher breakdown voltage, larger signal, lower leakage current and low noise is the primary requirement for future detectors. We want systematic study and investigate one of the important parameters namely the breakdown voltage and want to achieve optimum result for future detectors...
This work proposes a new method for the extraction of the flatband voltage, effective nanowire width and doping concentration of junctionless nanowire transistors. The accurate extraction of such parameters is essential for the understating of the device behavior and for the prediction of its performance in circuits through analytical models. The method is validated using 3D numerical simulations...
In this paper, twin gate rectangular recessed channel (TG-RRC) MOSFET with independent gate control is used to realize its application in digital electronics by using it as two input logic. The input logic is controlled by the independent gates which have different work functions (Φ1 for gate 1 and Φ2 gate 2) which are separated by oxide layer of 2 nm, thus controlling various electrical parameters...
A multitude of existing technologies are based on the ability of converting light into electrical signals. Graphene has demonstrated a number of optical and transport properties [1] which are promising for this type of optoelectronic applications and great efforts have been devoted to the development of graphene-based photodetectors. Being a gapless semiconductor, graphene enables light absorption...
Deep UV (DUV) light-emitting diodes (LEDs) are finding increased application in many areas including water purification and sterilization. Sub-270 nm emission is ideal for these applications since bacterial DNA absorbs strongly in this wavelength regime. To extract high energy photons (∼5 eV), the LED cladding regions must be transparent and therefore consist of high Aluminum content (>60%) n-...
Hall-effect measurements for n-type and p-type GaN with low doping concentration are presented. The GaN layers were grown by metal-organic vapor phase epitaxy on hydride-vapor-phase-epitaxy-grown free-standing GaN substrates. For n-GaN, the origin of acceptor which compensating donor is not only C but also native defects for the Si doping concentration of 1016 cm−3 level. The electron mobility is...
Recently, Ga2O3 has become an attractive material for both power electronic and optoelectronic device applications since large-size electronic-grade Ga2O3 substrates can be readily produced by melt-grown methods. Furthermore, high quality epitaxy and n-type doping schemes have been demonstrated [1, 2]. Due to its ultra-wide band gap (∼4.5–4.9 eV), Ga2O3 is estimated to have a critical breakdown field...
β-Ga2O3 is being actively pursued for power devices owing to its wide bandgap of 4.5 eV and the availability of melt-grown native substrates for high quality epitaxy. Depletion and enhancement mode Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETS) reported to date have been implemented as lateral devices. For high voltage and high power ratings, vertical topologies are preferred since...
Recently, β-Ga2O3 has shown its great promise for next generation high power device applications due to its ultra-wide bandgap of 4.6–4.9 eV [1]-[5]. Despite the very early development stage, β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) have demonstrated a high blocking voltage of 0.75 kV and a breakdown field of 3.8 MV/cm [2][4]. However, a crucial disadvantage of this material...
As transistor technologies continue to scale and device density increases, junction formation requirements are subject to increasing challenges. Ion implantation is the preferred approach for junction formation due to its precise control of dopant depth and dose. These aspects are crucial to deliver finely tuned transistor performance and limit device variation. Arsenic and phosphorus (n-type) dopants...
Ion implantation technique for controlling n- or p-type conduction has been a significant challenge for GaN-based high-power devices to achieve levels approaching their theoretical limits of performance. Previous studies on n-type conduction of GaN through Si ion implantation achieved 86% [1] and approximately 100% [2] of activation rate after annealing at 1250 and 1400 °C, respectively. Such high-temperature...
In this work, a trench power MOSFET (UMOS) with vertical RESURF is investigated. And the influence of some key parameters on UMOS static performances are simulated and analyzed by TCAD-Process. The proposed RESURF conventional trench gate UMOS is able to achieve better UIS performance while maintaining a specific low on state-resistance with breakdown voltage over 100 Volts. Here we are proposing...
A novel concept for a BCD technology is presented which comprises the processing of the wafer on the thinned backside and which offers — similar to SOI technology — a full dielectric isolation of power devices. Limitations of the breakdown voltage of p-LDMOS encountered in conventional BCD technologies are overcome by replacing the commonly applied deep n well layer by an n+ region formed on the wafer...
The characteristics of junctionless(JL) SON(Silicon on Nothing) FinFET, JL Bulk FinFET and SOI(Silicon on Insulator) JNT(Junctionless nanowire transistor) transistors were compared. A Silicon on nothing transistor have substrate with air filled dielectric. JL SON FinFET have better on/off current ratio and short channel effect (SCE) by reducing channel thickness due to substrate channel junction....
To improve the stability of multilayer graphene (MLG) doped with molybdenum pentachloride (MoCl5) for low-resistance interconnects, we have newly developed an in-situ passivation process with molybdenum oxides. The improved air stability of dopants was confirmed with Raman spectroscopy by the direct MoOx passivation at room temperature.
Graphene has been employed as gate electrodes of n-channel silicon transistors. When the graphene gate is exposed and gas molecules adsorb on the graphene surface, the work function of graphene changes depending on the gas species and concentrations, thus changing the threshold of the silicon transistor. This novel graphene-gate sensor exhibits sensitivities more than one order of magnitude higher...
FinFETs and Ultrathin Body FETs are promising candidates to enhance scaling trends of CMOS technology. Wavy FinFET is a hybrid device that combines these competing tech-nologies on SOI platform to provide high density and drivability without causing area penalty. The problem associated with this device is higher leakage and lower threshold voltage. Device engineering is the only solution for this...
In this paper, a novel triple reduced surface field (RESURF) LDMOS with N-top layer based on substrate termination technology (STT) is proposed. The analytical models of surface potential, surface electric field, breakdown voltage (BV) and optimal integrated charge of N-top layer (Qntop) for the novel triple RESURF LDMOS are achieved. Furthermore, STT is applied to avoid the premature avalanche breakdown...
Integration of isolated LDMOS transistors in smart power process is subjected to bipolar parasitics due to multi layers constructions that are needed for high voltage operation. These parasitics need to be minimized to assure proper circuit functionality. Several approaches for parasitics reduction are suggested: DTI (Deep Trench Isolation) module optimization, NLDMOS and PLDMOS device construction...
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