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In this paper, we propose a feasible and prospective method to prepare copper-coated ceramic substrate by using nano thermo-compression bonding technology. Nanoporous copper (NPC) can be prepared by dealloying of Cu-Zn alloy system in L-tartaric acid solution. By controlling the concentration of L-tartaric acid solution and dealloying temperature, NPC presents good homogeneity and open bi-continuous...
The plasma activation is a promised process to improve the bonding performance for materials pretreated with the plasma. In this study, the chips studded with gold bumps flipped-bonding onto alumina substrates using the thermal compressional bonding. To improve the bonding performance of gold bumps onto copper electrodes, both gold bumps and alumina substrates were pretreated to Ar/H2 plasma at 400...
Insulated gate bipolar transistor (IGBT) operates at high current, high power and repeated shock current conditions. Joule heating induced during high current conditions, subsequently raising the temperature of the IGBT module. In this paper, we carried out the DC power cycling test with the 200 A current condition. The temperature distribution and the temperature change process of the whole IGBT...
Via last TSV (through silicon via) technology is more and more applied in 3D WLCSP, which can decrease package volume and increase I/O density. The process of via last includes temporary bonding, grinding, photolithograph, silicon etching, SiO2 etching, CVD, PVD, plating and so on. Silicon etching and SiO2 etching are important process of via last TSV package for interconnect technology. Temporary...
The scaling of package and circuit board dimensions is central to heterogeneous system integration. We describe our solderless direct metal-to-metal low pressure ( 20 MPa. The combined reduction of dielet interconnect pitch, dielet-to-dielet spacing and trace pitch will enable a Moore's law for packaging.
Recently, silver solid solution phase with indium, (Ag)-xxIn, has been demonstrated to be one of potential candidates of metallic packaging material for future high-power electronics bonding and interconnection applications due to its great anti-tarnishing property and superior mechanical properties, such as high ductility and high ultimate tensile strength. To further explore and utilize its great...
3D multi-layer chip stacking is a significant assembly challenge with dependencies on die size and thickness, interconnect pitch, bump diameter, number of dies involved, and die warpage. The assembly processes used to overcome the technical difficulties associated with the stacking of medium and large logic dies with fine pitch copper pillar bumps is discussed, including mass reflow and thermo-compression...
Wide band gap semiconductors have becomevery attractive for power electronics because of their excellentproperties at high power and high junction temperaturesabove 300°C. However, the maximum operation temperaturesof conventional packaging materials, like tin-based solders oreven tin-lead solders, are limited to around 220°C. Thus, a newpackaging material with a higher melting temperature must bedeveloped...
Flip-chip interconnects made entirely from copper are needed to overcome the intrinsic limits of solder-based interconnects and match the demand for increased current densities. To this end, dip-based all-copper interconnects are a promising approach to form electrical interconnects by sintering copper nanoparticles between the copper pillar and pad. However, the remnant porosity of the copper joint...
Flip-chip bonding has become an efficient method to realize fine-pitch interconnection in high density interconnection applications. Thermal-compression bonding of Cu/Sn microbumps can induce extra thermal stress because of high bonding temperature, long bonding time and high bonding force. Temperature, time and force are expected to be decreased to improve the thermal-mechanical reliability of the...
Silver (Ag) has been emerging as an attractive die-attach material for high power devices because of its highest thermal conductivity among metals and high melting stability. The most well-known silver die-attach technique is to sinter micro-or nano-silver pastes. The challenging issues of sintered Ag joints are pores in the joint and migration of unfriendly species such as chlorine ions through these...
Copper/tin thermo-compression bonding technology has been a focus and hot spot of global research institutions for a long time. Inter-diffusion and intermetallic compound (including the metastable η-phase Cu6Sn5 and the stable ε-phase Cu3Sn) formation will occur at the bonding interface during the heating and pressing step of bonding experiments. Considering that tin is easily oxidized and copper/tin...
Handheld consumer electronics are requiring more complex packaging designs to accommodate higher component densities and reduce form factor. Fan-out wafer-level packaging (FOWLP) has garnered much attention lately as a cost-effective way to achieve high interconnect density and manage larger I/O counts within an affordable package. Two principal approaches to manufacturing FOWLP components have evolved:...
Cu-to-Cu direct bonding is one of the key technologies for 3D (three-dimensional) chip stacking. This research proposes a new concept to enhance Cu-Cu direct bonding through the control of residual stresses on bonding surface. Compressive residual stress induced by near-infrared radiation (NIR) enhances the diffusion of copper atoms and thus direct bonding. Subjected to thermal compression bonding...
An innovative pre-treatment to enhance Cu-to-Cu bonding through the exposure of electromagnetic radiations including flash light and near infrared rays is first proposed in this study. Short period of electromagnetic radiation exposure can significantly improve the bonding strength. It can be ascribed to the sudden heating/cooling and thus compressive residual stresses which enhance the diffusion...
Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.
Laserbonding is a newly developed technology that combines the flexibility and robustness of classical ultrasonic wire-bonding with the advantages of laser welding as regards large connector cross-sections, low quality requirements to surf aces and clamping rigidity. Thanks to modern laser sources with high brilliance, near-infrared radiation can be used in oscillation welding Cu even in a keyhole...
The sealing and contact bonding of IMU (inertial measurement unit) are important procedures in the MEMS device fabrication. Conventional process is Al-Ge eutectic bonding developed by InvenSense, for which the process temperature is above 450°C and the bonding time is longer than 1 hr. This study proposes an innovative and efficient process combined with an air plasma bombardment and a following catalyzed...
This paper presents electromigration results on a hybrid bonding-based test vehicle to study the impact of bonding and passivation annealings on backend of line robustness. Black's parameters extraction leads to typical values of Cu-based interconnects. Electromigration lifetime remains the same whatever the bonding annealing conditions but a significant influence of passivation annealing is observed...
Nowadays, copper bump is often used in driver IC which usually used in high current density environment. High current density leads to electromigration. Therefore, the main objective of this paper is reliability analysis, including observing the changing by electromigration in copper pillar bump with different magnitude of current and temperature. Use gridding and Scanning Electron Microscope (SEM)...
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