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The ring core inductors are widely used in EMI filters to reduce the conducted emissions induced by the power converters. However, the high frequency behavior of these inductors is modified by the apparition of the stray capacitances. These elements have more influence on the efficiency of the EMI filters. In this paper, three modeling methods based on the finite elements method are proposed to calculate...
In power electronics applications, high frequency models for cables are necessary to understand EMI issues in pulsewidth modulation drives. This paper shows the approach developed at the French Institute of Technology (IRT) Saint-Exupery, in order to take account of the frequency dependency of unshielded power cables per-unit-length parameters for EMC simulations. Fast, predictive models are compared...
In order to research the conducted EMI modeling of the inverter circuit, in this paper the high frequency models of power semiconductor devices, passive components, and extractions of parasitic parameters of passive components, printed circuit board (PCB) are presented. The simulation model of conducted EMI of the inverter circuit is proposed by using the Saber software and its simulation waveform...
A new direct extraction method for the determination of the parasitic capacitances of multi-finger MOSFETs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including Cpg, Cpd and Cpgd can be extracted simultaneously by using MOSFETs of different...
This paper presents a new way of modeling the integrators non-idealities for high-level sigma-delta modulator models. In this way, designers can correlate directly the integrator specifications like finite DC gain, Gain-Bandwidth product and Slew Rate with modulator performances (SNR, SNDR). Taking into account capacitive effects, a high degree of accuracy is obtained which is verified by transistor...
This work describes a statistical model for the C-V global variability of 28 nm FD-SOI using the sensitivities of the capacitance to each process parameter calculated using Leti-UTSOI compact model. The percentage contribution of each process parameter to the total C-V variation is explored to identify the dominant source of variation at different bias conditions. The proposed model provides an alternate...
This paper presents a scalable MIM capacitor model that is applicable at RF and mm-wave frequencies. The model parameters are obtained from electromagnetic simulations and verified by measurements over a wide range of geometry parameters. A de-embedding method is described that is based on two through structures.
In this paper, we propose a new intelligent sensor based on Electrolyte-Gated Graphene Field-Effect Transistor (EGG-FET) and Artificial Neural Network (ANN)-based Corrector, for high performance and low cost pH monitoring applications. The EGG-FET behavior is investigated analytically using an analytical drain current model based on drift-diffusion carrier transport which is given as function of chemical,...
In order to achieve a minimum and stable TSV capacitance independent of operating voltage and frequency, a simple but feasible silicon-insulator-silicon (SIS) TSV structure is proposed using ultra-low-resistivity silicon (ULRS) and polymer Benzocyclobutene (BCB). In this paper, an analytical model for capacitance evaluation of the proposed SIS TSV is strictly derived in detail from Poisson's equation...
Core vias found in the packages of high-speed ICs can have a large impact on overall channel performance. Thus accurately modeling core vias in the package is essential. In this paper analytical methodologies are used to calculate equivalent circuit models of core vias.
This paper presents the simplified charge-based EKV MOSFET model and shows that it can be used for advanced CMOS processes despite its very few parameters. The concept of inversion coefficient is then presented as an essential design parameter that spans the entire range of operating points from weak via moderate to strong inversion, including the effect of velocity saturation. It is then used to...
This paper deals with the static electrical modeling of the super-gain BJT which is dedicated to an innovative 600V AC switch solution which it gives birth to. As power bipolar component, its electrical modeling is based on the Gummel-Poon model which is widely accepted and used by researchers as well as circuit simulators such as Pspice. All of the model parameters are extracted from device characterization...
This paper presents numerical estimation for the capacitance of an arbitrarily shaped conducting bodies based on the moment method with triangular patch modeling. The integral equation is evaluated numerically using a Gaussian quadrature method for triangles. The singular elements of the moment matrix are evaluated by using the Duffy transformation method. The Numerical data on the capacitance of...
This work investigates power losses in conventional and multi-level buck converters. Conduction and switching losses are modeled for conventional, 3-level and 5-level buck converters as a function of technology parameters, design variables and the operating point. It is shown that for a given set of technology parameters and optimized design variables, multi-level buck converters achieve higher efficiencies...
We modeled the electrostatic doping in multilayer graphene interconnects by self-consistently solving Poisson's equation and we computed the resistivity per layer by accounting for acoustic and optical phonon scattering. For the analysis, we used two different doping concentrations, representative for graphene on top of hexagonal Boron Nitride and SiO2 substrates. Finally, we benchmarked graphene...
The paper presents the comparison and the experimental validation of three ultracapacitor (UC) circuit models of the Maxwell Boostcap® module. The more advanced layout takes into account the nonlinear dependence on the terminal voltage, the internal losses and the charge redistribution effects by suitable RC branches. By means of different types of charge tests, the more convenient circuit layout...
Planar inductors devices are essential parts in power converters which are used in the different stage of energy conversion. Designed and simulated power converters needs prototype-less approaches. However, Models of planar inductors devices are still not available in simulator tools. There is, thus, a specific limitation during the simulation process of integrated power converters. Thus, this paper...
In this paper, Si Schottky-barrier diodes (SBD's) fabricated in CMOS process are shown to be suitable for THz imaging applications. We firstly present a physical-based equivalent circuit model for Si Schottky diodes fabricated by standard 130nm CMOS technology in which I-V, C-V and RF performance are covered. Secondly, the developed transmission Line (TL) model are employed to optimize T-type matching...
Field effect transistor (FET) or bipolar junction transistor (BJT) based circuits, involving emitter/source degeneration by any general impedance are widely known for their positive effects on circuit performance. The circuit's behavior like input-output impedances, trans-admittance, voltage and power gains of such topologies are well known. In this paper, we propose to analyze the topology by looking...
EMI becomes unavoidable owing to the high frequency of power electronics. In order to predict and reduce the influence of EMI, a precise high frequency model of power MOSFET needs to be established to forecast EMI in the circuit. First, two common used power MOSFET models, the sub-circuit model and the lumped-charge model were described. After comparing the advantages and disadvantages of these two...
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