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An overview of the state-of-the art of the ongoing research on high-k gate dielectrics for the advanced nano-CMOS technology is presented. The most promising high-k candidates for next-generation MOS devices are highlighted. The associated performance degradation and the scaling limitations of these high-k materials are also discussed and emerging solutions and optimization schemes for the subnanometer...
In this paper the electrical and trapping characteristics of multilayer HfO2/Al2O3 dielectric stacks on silicon as a potential device for flash memory applications were investigated. Trapping phenomena have been studied by evaluating the memory window, i.e. the flat-band voltage shift of high frequency C-V curves after application of series of positive and negative voltages. The influence of post-deposition...
We report on a progress in development of an idea that a proper arrangement of dielectric particles with a particular structural asymmetry which are made from a low-loss high-refractive-index material allows to reach high-Q trapped-mode resonant conditions in planar metamaterials in the microwave, infrared and visible parts of spectrum. In these metamaterials an electromagnetic coupling between the...
We demonstrate a heterogeneous microring resonator with integrated InP-dielectric-Si metal-oxide-semiconductor (MOS) capacitor by high-k dielectric wafer bonding. HfO2 is used for its extremely high k value (20–30) and enables optical tuning range more than twice better than Al2O3 based MOS devices.
The fabrication of both n and p-type Si MOS capacitors using high k dielectric as insulator deposited by atomic layer deposition technique is presented. The interface obtained between the high k dielectric and the semiconductor substrate, critical for stability and feasibility of the experimental devices, is analyzed using both numerical calculation of the ideal capacitance — voltage (C-V) characteristics...
In this paper, a compact model for the gate current in HKMG nMOS transistors is presented. The carrier transport through the multi-stack gate dielectrics of HKMG MOS transistors is shown to be dominated by the Trap Assisted Tunneling and Poole-Frenkel conduction mechanisms. Both these mechanisms occur simultaneously and each is dominant in a particular gate voltage range. The interdependence and simultaneity...
Electrostatic adhesion force is studied and analysed with emphasis on design parameters of the interdigital electrodes, material properties of dielectric layers and its thickness. From these results two fabrication processes of the electroadhesive foils are studied to reach the highest possible performance. Experimental measurements are carried out to verify the results.
The hybrid material of PI (with SiC whisker, SiC particle, AlN particle, and diamond particle) is proposed to satisfy the requirement of higher thermal conductivity for the high density package system. The thermal conductivity of the proposed hybrid materials with a moderate amount of doping can be improved to about 6–12 times. The hybrid films are fabricated by mechanical ball-milling process, high...
This paper purposes a portable multispectra tunable forensic lens for jadeite analysis. The visible and ultraviolet light are used to detect the absorption spectra of natural jadeite, implement jadeite, and jadeite color spectra around 550∼700 nm. Besides, tunable lens with three-step (5, 7 and 10 X) magnification is based on the dielectric liquid lens.
Grain characteristics of copper filler have an important influence on physical properties of through silicon vias (TSVs) in three-dimensional (3D) packaging. Due to the mismatch of coefficients of thermal expansion (CTE) between the copper and silicon, there exist obvious thermal stresses when the TSV structure is bearing thermal load. However, the elastic response characteristics of copper can be...
We report a chiral dielectric metasurface with regular 3D nanorelief patterned by focused ion beam in a 300 nm thin single-crystal silicon film on sapphire. Upon annealing, the metasurface features a high transparency along with a circular dichroism and an optical activity reaching 0.5 and 20° respectively in the visible range, possesses crystal-grade hardness, chemical inertness of glass, and thermal...
We propose and demonstrate a fabrication technique to realize extremely narrow dielectric slots in silicon waveguides. Using this method, we have demonstrated a silicon slot waveguide with 10 nm dielectric slot with a measured propagation loss of 13.6 dB/cm.
In this work, we present FEAs based on silicon field emitter tips on top of silicon nanowires with four different device structures: (a) buried tips, (b) buried tips with graphene, (c) released tips, and (d) released tips with graphene. Measured device parameters are used to characterize the performance of the devices. In general, we obtain low turn-on voltages when bFN is low. Additional studies...
This is a case study of an early failure analysis on a chip fabricated on the 40nm technology node. A large leakage current was observed in the high voltage (HV) supply after the chip was stressed as a part of an early failure rate (EFR) test. Electrical failure analysis (EFA) using Backside Emission spectroscopy [1] and Optical Beam Induced Resistance Change (OBIRcH) [2] showed the existence of hotspots,...
A dielectric-metal double layer grating structure is proposed for high performance of polarization converter and one-way transmission in the terahertz (THz) region. The results show that this composite grating structure achieves a high polarization conversion of 90% and a broadband one-way transmission with an extinction nearly 30dB from 0.2 to 1.2THz. It provides a simple way towards practical applications...
We propose in this work an original nanobeam cavity geometry for the hybrid integration of active materials in silicon photonics. The key point of this structure is to use Bragg mirrors exploiting a dielectric dispersion band, to form a field-confining cavity core relying on an air dispersion band. The resulting situation opens the way for a gentle confinement of the electromagnetic field in the low-index...
Ultra-short breakdown in the bulk of transparent materials has been intensively investigated in the last years, especially in dielectrics [1]. Whereas three-dimensional (3D) femtosecond laser micromachining in dielectrics is highly advanced, it remains extremely challenging in narrow bandgap materials such as silicon (Si). Recent numerical and experimental investigations show that only an underdense...
Similar to their plasmonic counterparts, dielectric nanoantennas have the ability to manipulate the emission properties of nanoscale emitters placed in their vicinity. Most importantly, they can increase the radiative decay rate of emitters by coupling to Mie-type resonances and/or shape the emission into directional patterns [1]. While considerable theoretical work has been dedicated to the study...
Huygens' metasurfaces that utilize tailored Mie-type resonances of dielectric particles form a versatile platform for the design of ultra-thin and highly-efficient wavefront-shaping devices [1-3]. Dielectric metasurfaces typically yield higher efficiencies than comparable plasmonic structures due to their significantly lower absorption losses. Furthermore, it was shown that the superposition of the...
The recently introduced concept of photonic phase diagram between metamaterials and photonic crystals allows the design of periodic dielectric structures to be easier. In this paper, we apply inverse dispersion method to build the phase diagram of structures with a frequency dependent dielectric permittivity of their constituents. We show that the phase diagram obtained by means of the inverse dispersion...
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