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A novel configuration operating at 1550 nm based on silicon-on-insulator substrate is proposed for side-lobes suppression of a dielectric optical nanoantenna. The proposed configuration consists of reflection gratings which can reflect the downward light back. By using this configuration, the side-lobe level can be improved by 12.78 dB.
We present an ultra-broadband two-mode de/multiplexer based on a multimode interference coupler with sub-wavelength grating waveguides, a symmetric Y-junction and a 90° phase shifter. Numerical simulations show insertion losses below 0.18 dB and crosstalk lower than −20.6 dB in a 300 nm wavelength range.
A novel SOI trench LDMOS with vertical double-RESURF is studied in this paper. A p-type silicon pillar is inserted beside the oxide trench as a vertical double RESURF layer, which can effectively modulate the electronic field and enhance the doping concentration in the drift region. The drain n+ region extends to the surface of buried oxide layer, shortening the motion-path in the high-resistance...
This work presents a novel Si-on-SiC laterally-diffused (LD) MOSFET structure intended to provide high breakdown voltage of 600 V and be resistant for harsh-environment space applications. Single-event effects (SEE) and total ionizing dose (TID) are investigated for the first time in such device. Initially, the considered Si LDMOS structure on SiC suffers from single-event burnout (SEB) at a drain...
A fully suspended mid-infrared racetrack resonator is experimentally demonstrated. It has good mechanical stability and broad spectral range of transparency. The measured loaded optical Q factor is 16,440 at 2402.38 nm, with an extinction ratio of 11.83 dB.
We demonstrate a new post-fabrication trimming technique to fine-tune the phase of integrated Mach-Zehnder Interferometers (MZIs), enabling permanent correction of typical fabrication based phase errors. Preliminary results demonstrate a phase trimming accuracy of 0.146π.
We present on experimental results of strain-induced Pockels effect in silicon based on Mach-Zehnder interferometer modulators. We theoretically studied both Pockels effect and carrier parasitic effect in silicon under an electric field. We demonstrated high speed Pockels-based optical modulation up to 25 GHz.
We report on experimental results of silicon micro-ring resonators based on non-resonant photonic metamaterial waveguides. High extinction ratio up to 30 dB and loaded Q-factors in a range of 1500 to 6000 were achieved at a wavelength of 1550nm.
We design and fabricate a silicon based 1×2 optical switch based on the free-carrier plasma dispersion effect, with a Mach-Zehnder interferometer structure on silicon-on-insulator (SOI) wafer. The experimental result shows that it has an extinction ratio of 21.8 dB at 1546 nm, which meets the requirements of the most applications in optical telecommunication networks.
The bandgap reference circuits are very sensitive to electromagnetic interferences (EMI) which induce voltage offset on their outputs. Two bandgap chips with different technologies are designed for EMC study. The conducted immunity of VDD and VSS pins are tested following direct power injection (DPI) method. The aim of this study is to compare the susceptibility characteristics of same bandgap circuit...
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive...
Silicon on Insulator (SOI) is a well-established photonic platform that is of interest to photonic integrated circuits (PICs) due to its compatibility with existing fabrication processes used in the manufacture of electronic integrated circuits. Although SOI offers a high refractive index contrast that enables strong optical confinement of the propagating optical mode in the silicon layer, the performance...
Intelligent connected sensor and actuator endpoint nodes enable the Internet-of-Things (IoT). A brief overview of endpoint node functional blocks and requirements for low-power consumption are discussed. VLSI technology enablers for IoT include Ultra low Power (ULP) and Ultra Low Leakage (ULL) semiconductor process platform extensions. ULP and ULL implementations for bulk silicon technologies are...
Intelligent connected sensor and actuator endpoint nodes enable the Internet-of-Things (IoT). A brief overview of endpoint node functional blocks and requirements for low-power consumption are discussed. VLSI technology enablers for IoT include Ultra low Power (ULP) and Ultra Low Leakage (ULL) semiconductor process platform extensions. ULP and ULL implementations for bulk silicon technologies are...
Neuromorphic engineering aims at building cognitive systems made of electronic neuron and synapse circuits. These emerging computing architectures have a high potential for real-world problems that are difficult to formalize and program, such as vision or sensorimotor control. In order to leverage the potential of neuromorphic engineering and study cognition principles in physical systems, the development...
Systematic experiments demonstrate the presence of the kink effect even in FDSOI MOSFETs. The back-gate bias controls the kink effect via the formation of a back accumulation channel. The kink is more or less pronounced according to the film thickness and channel length. However, in ultrathin (<10 nm) and/or very short transistors (L < 50 nm), the kink is totally absent as a consequence of super-coupling...
This paper shows for the first time, the influence of back gate bias (VB) in some analog parameters on pMOS Silicon-On-Insulator (SOI) omega-gate nanowire (ΩG-NW) devices down to 10 nm width (W). An excellent electrostatic control is observed in devices down to 40 nm of channel length. The saturated transconductance slightly increase while the output conductance slightly decrease with VB increment,...
A novel nano MOSFET is reported in this paper to have high electrical performance. In the proposed structure which is named as QSZ-MOSFET, two silicon zones are considered in the channel and buried oxide. The N-silicon zone in the channel region creates a depletion region that increases the current capability. Moreover, the majority of the holes due to the floating body effect could be absorbed in...
On advanced technology nodes, increases in power density, non-planar architectures and different material systems can exacerbate local self-heating due to active power dissipation, which can affect device performance and reliability in various ways. This paper presents an overview of the research on self-heating in transistors and discusses modulators, measurement schemes, spatio-temporal sensitivities,...
Fully Depleted Silicon-On-Insulator (FDSOI) devices have been shown to have a superior resilience to radiation effects. In this work an analysis of the 28nm FDSOI resilience to heavy-ion impacts is undertaken at different temperature and buried oxide (BOX) thickness using TCAD tools. The results show that BOX thickness variation has a low impact on the collected charge (CC) produced by the heavy ion...
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