The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The semiconductor packaging technology trend for electronic products continues to achieve greater miniaturization and higher functionality. Thinner profile chip scale packaging (CSP), such as flip chip CSP (fcCSP), with increasing die complexities is a very important technology for next generation communication devices and internet of things (IoT) applications. Recently, integrated fan out wafer-level...
Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic...
This work is the first to achieve a low temperature (≦250 °C) and low pressure (≦0.1 MPa) fluxless bonding of plateless Cu-Cu substrates by transient liquid phase sintering (TLPS) of Ag nanoparticles and Sn-Bi eutectic powder. Sintering was conducted under formic environment to assist the wetting of Sn-Bi and to suppress the oxidation of Cu substrate. Effect of mixture composition to the shear strength,...
We present a new bonding process for gallium nitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and sCd at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout)...
The formation of a high temperature die attach based on transient liquid phase (TLP) bonding is demonstrated using the binary system Ag-Sn in a sputtered thin layer approach. The microstructure and shear strength are compared to a foil based approach and show the successful replacement of the Sn foil and thus a simplification of the stack assembly. The diffusion of the Ag-Sn system is investigated...
This paper presents two types of coplanar transitions based on aluminum nitride (AlN) substrate for interposer designs of terabit transceivers. The designs of coupled coplanar waveguide (CCPW), coupled line, coplanar waveguide (CPW), and coplanar stripline (CPS) based on AlN substrate are explained. The effects of absorber layer and wire bonding bridges are described. Two types of coplanar transitions...
As compared to piezoelectric technology, MEMS technology employed for Capacitive Micromachined Ultrasonic Transducer (CMUT) fabrication provides increased compatibility with 3D packaging methods, enabling the possible development of advanced transducer-electronics multi-chip modules (MCM) for medical imaging applications. In this paper, an acoustically optimized 3D packaging method for the interconnection...
We present a transimpedance amplifier (TIA) based on a low temperature polysilicon (LTPS) process, which is operated in a rïactive atmosphere of alkali vapor contained in a glass cell. We successfully encapsulated the electronics and present a sealing method for the glass cell, which is compatible with the employed LTPS process and shows long term leak tightness in the ultra high vacuum regime. The...
In this paper, we propose a feasible and prospective method to prepare copper-coated ceramic substrate by using nano thermo-compression bonding technology. Nanoporous copper (NPC) can be prepared by dealloying of Cu-Zn alloy system in L-tartaric acid solution. By controlling the concentration of L-tartaric acid solution and dealloying temperature, NPC presents good homogeneity and open bi-continuous...
The plasma activation is a promised process to improve the bonding performance for materials pretreated with the plasma. In this study, the chips studded with gold bumps flipped-bonding onto alumina substrates using the thermal compressional bonding. To improve the bonding performance of gold bumps onto copper electrodes, both gold bumps and alumina substrates were pretreated to Ar/H2 plasma at 400...
Plastic package of integrated circuit has the advantages of excellent performance, light weight, small size, and outstanding mechanical properties, which can be widely applied to weapons and equipments, aerospace, and other important areas. Due to the thermal mismatch of CTE, the traditional substrate-type plastic package is more likely to have a series of failures such as delamination and warping...
Hybrid integration of GaN and Si photonic devices is promising. Using a polymer bonding technique, GaN microring resonators are fabricated on Si substrate. Transmission characteristics of the GaN microring is measured.
Package warpage is often a problem in surface mount reflow process especially for thin package. Large warpage prevents package solder balls to be connected to PCB pads and results in low process yield. In order to effectively minimize warpage in reflow process, this paper proposed a new approach to reduce package warpage by temporally bonding the back of the packaged component to a rigid plate. In...
In the analysis of plastic packaging SiP product failure, we should not only consider the plastic material and techniques inherent problems, but also the problem that SiP products have a lot of materials, complex structure, and small surface bonding. A type of plastic packaging SiP module function failure after reflow soldering, through appearance inspection, pin electrical characteristic test, X-ray...
This paper presents a low temperature technological process ahle to integrate an all-glass microfluidic network with an ElectroWetting On Dielectric (EWOD) structure for the digital handling of liquids. The fluidic channels result from the wet-etching of the glass, while the electrodes necessary for the droplet movement are deposited on the bottom and top surfaces of the microfluidic structure. The...
Isotropic conductive adhesives (ICAs) based on metal-coated polymer spheres (MPS) have shown high potential for low-temperature, high-throughput assembly of a transducer array on a substrate in ultrasound imaging applications. The process of bonding and subsequently dicing a transducer stack on a flexible substrate was evaluated. The bonding material was MPS-based ICAs containing a commercial epoxy...
For improvement of the productivity and the cost reduction, FOWLP (fan-out wafer level package) or FOPLP (fan-out panel level package) process using large-sized substrate has been actively developed in recent years. Above all, we will report about the novel TCB (thermal compression bonding) equipment which is even applicable to a 3D-IC stacking process and a fine pitch FOWLP or FOPLP of RDL-first...
Soft soldering is still the standard bonding method in order to provide a large void-free joining area in power electronics module applications. Ag sintering has been proven for small-area die attach applications to increase junction temperature and reliability. In this paper, we explore silver sintering technology further for large-area high-temperature substrate bonding in order to enable full benefits...
This study investigated the relations between base resins and flux compounds applied to NCF (Non Conductive film) for thermal compression bonding with micro Cu pillar bumps. As the use of NCF expands, outgas during flip-chip bonding process is being recognized as a serious problem because it lowers both of the productivity and the package quality. The flux compounds which are normally used to get...
Temporary bonding and de-bonding techniques using respectively spin-on glass (SOG) and hydrogenated amorphous-Si (a-Si:H) have been examined for multichip-to-wafer three-dimensional (3D) integration process. In this study, a 280 um-thick known good dies of 5 mm × 5 mm in size were temporarily bonded to a pre-deposited (a-Si:H (100 nm) and SOG (400 nm)) support glass wafer. After completing the die...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.