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Microsystem technology based on micro machining technology and integrated circuit technology has the advantages of miniaturization, integration, intelligence, low cost, high performance, mass production and so on. An overview of the composition and working principle of the microsystem, it introduces the development history of micro system technology, current situation and industrial distribution pattern,...
This paper proposes an improved KNN algorithm to overcome the class overlapping problem when the class distribution is skewed. Different from the conventional KNN algorithm, it not only finds out the k nearest neighbors of each sample (even the test object itself) in the training dataset, but also the neighbors of the unknown test object. Then the validity value of a data point is computed based on...
The demand of electronic device applications for high performance, minimization and cost effectiveness has driven the highly integrated semiconductor packaging development in recent years. Embedding die technology, which reduces package height and weight, increases the functionality and density, improves electrical and thermal performance and reduces the cost effectively, is particularly attractive...
This work proposes a new method for the extraction of the flatband voltage, effective nanowire width and doping concentration of junctionless nanowire transistors. The accurate extraction of such parameters is essential for the understating of the device behavior and for the prediction of its performance in circuits through analytical models. The method is validated using 3D numerical simulations...
Flexible ITO-lree P3HT:PC61BM solar cells with spin-coated silver nanowire transparent electrode are demonstrated. For conventional structure type of solar cells, the power conversion efficiency (PCE) of devices based on silver nanowire can reach around 2.29%. As for inverted structure type, the PCE of devices can reach 3.39%. The conventional and inverted flexible ITO based P3HT:PC61BM solar cells...
Demands for highly-fUnctional flexible nonvolatile memories are quite increasing to realize future flexible consumer electronic systems. We demonstrated and fabricated the ferroelectric-based memory thin-film transistors (Fe-MTFTs) on flexible poly(ethylene naphthalate) substrates using organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and oxide semiconductor...
P-channel solution-processed organic thin film transistors based on a dual layer semiconducting network of polythiophene polymers and oriented germanium nanowires show a marked enhancement of up to five-fold in hole field effect mobility with respect to that of pristine polythiophene devices. The work presented here furthers our understanding of the interaction between polythiophene and oriented nanowires...
III-nitrides InGaN solar cells have exhibited many favorable physical properties for space photovoltaic (PV) applications. Here we demonstrate the first nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on nonpolar m-plane and semipolar (2021) plane bulk GaN substrates. The optical properties and PV performance of these InGaN solar cells were systematically studied, including...
We have demonstrated an all-solution-processed of flexible piezoelectric nanogenerator based on BaTiO3 and graphene quantum dots (GQDs) with several different concentrations by adding together GQD and PVDF on PET substrate. These devices then have been obtained by spin coating method which able to convert small mechanically wise deformation into electric energy. Even with limited area of active element...
In this contribution, we report the modifications incurring in the electro-optical characteristics of Organic Photodiodes exposed to ambient conditions on rigid and flexible substrates. Once the degradation of the devices is assessed and the challenges related to the use of plastic substrates are clarified, we propose an encapsulation method which is compatible with the fabrication process of solution...
In this presentation, we report a simple and effective method for improving the performance of CH3NH3PbI3 perovskite solar cells. By employing a novel hot-air annealing process (HAAP) and a merged annealing method (MA) for preparing the perovskite CH3NH3PbI3 film, we could successfully enhance the crystallinity of the CH3NH3PbI3 active layer and improve its photon collection properties. This led to...
The superb advantages of carbon nanotubes (CNTs) cannot be exhibited completely by devices using random CNT networks as channel materials due to the large tube-to-tube contact resistance. Traditional Langmuir-Blodgett (LB) method with direct compression and dipping has little performance improvement for films due to defects of CNT orientation. Here an improved LB method with gradually increased surface...
In this paper, we examine two shielding and grounding (GND) structures of conformal shields by using numerical simulation. The first case is about the number of GND pads of the conformal shield on a package. The second case is about the side-wall shielding of multilayered package's substrate. Numerical results show that the shielding performance is improved as the number of GND pads increases. In...
We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68...
GaN lateral transistors (HEMTs) continue to penetrate the power electronics market demonstrating excellent performance in the medium power applications. However, for power applications 10kW and higher, vertical GaN devices are preferred over lateral one, since the former offers higher current and power densities. To date, several different vertical transistor structures have been proposed and reported,...
The performance of integrated DC/DC converters is affected by substrate parasitic devices, such as bipolar transistors and thyristors: these devices cause enhanced substrate noise that can lead to the malfunctioning of the control circuitry, they degrade the efficiency, and thyristors can even cause the failure of the converter by latch-up. Due to the lack of software tools for the evaluation of the...
In the mobile phone market-driven trend, mobile phones are equipped with high definition display, low power consumption, and a thin and light body. As mobile phone body thickness keeps decreasing, many components should follow the trend, including display panel module, covering panel glass, phone case, battery, camera module, PCB, IC package…etc. In this paper, the fan-out wafer level package (FOWLP)...
We propose a new process utilizing back-side under bump metallurgy to improve die shift and enhance the thermal properties of advanced fan-out package applications. Using a back-sided UBM pad and molten solder, the pick-and-placed dies were spontaneously aligned on the substrate pad during reflow. Four kinds of UBMs were prepared on glass dies, and SAC305 solder was formed on the Cu and ENEPIG pads...
As modern consumer electronics are continuously driven toward to thinner and compact size, shrinking of assembly package size is a must. One of the challenges for reducing package height is to reduce substrate height, given that substrate provided an essential ratio in heightens for the entire package. Single Layer MIS (Molded Interconnect System) is one of innovative assembly technology that can...
We investigated the evaporative cooling performance of a nanoporous membrane based thermal management solution designed for ultra-high heat flux dissipation from high performance integrated circuits. The biporous evaporation device utilizes thermally-connected, mechanically-supported, high capillarity membranes that maximize thin film evaporation and high permeability liquid supply channels that minimize...
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