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Gallium Nitride, in the form of epitaxial HEMT transistors on silicon carbide substrates is now almost universally acknowledged as the replacement for silicon bipolar, power MOSFET, high power devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-SiC based MMIC's which enable state-of-the-art high frequency performance and bandwidth to be extended into Ku-Band and Ka-Band...
InAlGaAs/InP p-i-n photodiodes epitaxially grown on silicon substrate with a dark current density as low as 1.3 mA/cm2 at −3 V are demonstrated. Responsivity, bandwidth, and output power at 1-dB compression are 0.76 A/W, 8 GHz, and −3.4 dBm, respectively.
We report 1300 nm continuous wave lasing on an on-axis GaP/Si (001) virtual substrate operating up to 60°C with record low threshold current of 27 mA. Ridge and broad area lasers were fabricated with seven layers of p-modulation doped quantum dots and as-cleaved facets.
Fully functional thin-film blue LED was fabricated by novel means of (1) performing epitaxial growth of a single crystalline InGaN/GaN heterostructure on a recycled graphene/SiC substrate (2) followed by release and transfer of the heterostructure.
We report on the monolithic integration of RGB InGaN dot-in-a-wire LEDs on a single chip. The correlated color temperature can be continuously varied in the range of 1900K to 6800K, while maintaining excellent color rendering index capability (CRI>90). Moreover, submicron scale RGB pixels were demonstrated.
Technological results about low temperature epitaxial deposition of GaN layers on LTCC substrates are reported. Epitaxial growths of GaN layers have been performed on commercially available LTCC substrates at 540 °C. Pre-growth preparations of the LTCC substrates has been carried out by aluminum oxide buffering layers on the LTCC surface. Further depositions have been performed in an epitaxial reactor...
This paper reports the epitaxial-Si growth and dopant diffusion characteristics during fabrication of a vertical thin poly-Si channel (VTPC) transfer gate (TG) structured pixel, which is a possible candidate for future three-dimensional (3D) CMOS image sensor (CIS). Due to the increasing demand for higher resolution sensor, major CIS companies have presented various innovative 3D pixel structures...
Film bulk acoustic wave resonator (FBAR) filters are promising for the mobile communication devices. Frequency switchable filters are suitable for selecting the vacant frequency bands. Usual polarity unidirectional single layer resonator excites fundamental mode whereas polarity inverted double layer resonator excites second mode. In this study, we considered that polarity inverted structure is easily...
The frequency switchable filters are suitable for selecting the vacant frequency bands. Usual polarity unidirectional single-layered resonators excite 1st mode whereas polarity inverted two-layered resonators excite 2nd mode. We previous reported the frequency switchable two-layered PZT/PbTiO3 epitaxial film resonators[1]. However, PbTiO3 films grown on PZT/PbTiO3 films are difficult to obtain since...
We demonstrate for the first time that InAlAs/InGaAs QW can be selectively grown on micron-sized InP-OI substrates, obtained by selective epitaxy in empty oxide cavities on Si. The concept, material and optical characterizations are presented, paving the way towards integrated light sources for infrared applications.
The anisotropic behaviors of micro solder interconnects have been recognized as a crucial reliability concern due to the continuous trend of miniaturization in high-performance electronic devices. The hexagonal structure η-Cu6Sn5 with highly anisotropic phase structure has considerable influence on its growth behavior during soldering and performance in service. In the present work, synchrotron radiation...
Monolithically integrated light sources on silicon are key for future semiconductor microchips that comprise Si CMOS and on-chip optical interconnects as prerequisite for more energy efficient computers and data centres. Recently, major advances were achieved regarding direct integration of III-V gain material on silicon without introducing threading dislocations, especially via heteroepitaxy of semiconductor...
Since the first theoretical prediction by Yang [1] and the first experimental realization [2] interband cascade lasers (ICL) became more and more established for gas sensing applications. The ICL combines the cascading of several active stages known from the quantum cascade laser (QCL) and the interband transition of the diode lasers (DL) enabled by the semimetallic interface between InAs and GaSb...
We demonstrated that heteroepitaxial ε-Ga2O3 thin films can be grown on (111) GGG substrates by mist CVD. The out-of-plane and in-plane epitaxial relationship between the ε-Ga2O3 thin film and the (111) GGG substrate was determined to be (0001) ε-Ga2O3 [10-10] // (111) GGG [-1-12] by XRD 2θ-ω and φ scanning. This is the first report on heteroepitaxial growth of ε-Ga2O3 thin films on (111) GGG substrates...
Photonic Integrated Circuits (PICs) are evolving rapidly for applications from interconnects to sensors. We present the evolution of four different platforms for photonic integration: pure III-V/InP, pure SOI (monolithic silicon photonics), III-V heterogeneously integrated on SOI (heterogeneous integration), and III-V epitaxially grown on silicon. Presently, thousands of optical devices are integrated...
Low turn-on voltage junction barrier Schottky (JBS) diodes were fabricated using very thin (20 nm) and extremely highly Mg doped (2×1020 cm−3) p+-GaN layer placed on top of n−-GaN epitaxial layers grown on n-GaN substrates. By omitting p-GaN layers in conventional p+-GaN/p-GaN/n−-GaN vertical p-n junction diodes, device processing has been eased and low specific on-resistances (Ron<0.3 mΩcm2) have...
A thickness controlled dual junction GaAs//Si solar cell for current matching was fabricated and demonstrated. The optically thin GaAs top cell grown by metal-organic vapor phase epitaxy (MOVPE) was directly integrated on the Si bottom cell by surface-activated bonding (SAB) method. Owing to the optically thin (∼300 nm) GaAs top sub-cell, the operation of current-matched dual junction cell was observed...
Lasing characteristics dependent on the bonding temperature for 1.5μm GalnAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE using InP/Si substrate, and fabricated broad area edge-emitted LD. For the preparation of InP/Si substrate, the temperature during direct bonding process was changed to 350, 400, and 450 °C. The electrical and lasing...
We have developed the integration method for III-V semiconductor devices on silicon platform using epitaxial growth on direct wafer bonded thin film InP-Silicon substrate. We have successfully obtained 2-inch InP-Si substrate with low void density, and attained room temperature operation of 1.5μm wavelength GaInAsP laser by MOVPE growth.
In this paper, growth and fabrication of enhancement mode InGaN (5nm)/AlGaN (35nm)/ GaN (1.8 μm) HEMT is presented through focused ion beam (FIB) lithography technique for different alloy material as a source/drain contact. The X-TEM, AES, AFM has been done of the metal deposited surfaces and DC characterization reveals threshold voltage of 1.2 V.
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