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Fan-Out Wafer Level Packages (FOWLPs) and Fan-Out Panel Level Packages (FOPLPs) have been proposed for promising candidates of the advanced packages for multifunctional LSI with many I/O (input/output). FOPLP is expected to reduce the cost of FOWLP by improving the productivity per substrate. Dielectric materials for redistribution layers (RDLs) are one of the most important materials for FOPLPs....
A novel IGBT module construction using materials with matching coefficients of thermal expansion (CTEs) to provide longer lifetime and increased reliability will be presented. This technology reduces the stress on solder layers in the module, which tend to fatigue due to the module's flex during heat cycle tests. It will be shown that designs with matching CTEs also reduce the module's susceptibility...
Since the year 2000, the up to 400 Volt Direct Current (400VDC) powering interface for Telecom and Datacenters equipment has been standardized and industrialized as it brings advantages. Compared to 48 Volt Direct Current power solutions, it uses much less copper and the energy losses in cable are lower. Compared to Alternating Current uninterrupted power supply (UPS) benefits are simplicity higher...
Packages of commercial Gallium-Nitride power semiconductors present increasingly small dimensions to enable low parasitic inductance, increasing the heat flux density of the package and the challenges associated with their thermal management. This paper compares between Printed Circuit Boards and Direct Copper Bonded as substrates for a Gallium Nitride based half-bridge from a thermal and reliability...
The plasma activation is a promised process to improve the bonding performance for materials pretreated with the plasma. In this study, the chips studded with gold bumps flipped-bonding onto alumina substrates using the thermal compressional bonding. To improve the bonding performance of gold bumps onto copper electrodes, both gold bumps and alumina substrates were pretreated to Ar/H2 plasma at 400...
In this paper, the growth behavior of twin boundary in plated copper film was thoroughly investigated using SEM and TEM to facilitate its application as under bump metallization (UBM). The bath consisting of different amounts of H2SO4 was adopted to individually study the influence of pH on cross-sectional microstructure of copper film. Increasing the sulfuric acid concentration could greatly increase...
For a limited solder volume interconnect structure, bump interconnect reliability is more sensitive to the growth behavior of the interfacial intermetallic compounds(IMCs). The study of the effect of solder cap thickness on the interfacial diffusion reaction is of great importance to the application of copper pillar bump. Here, we investigated the effect of different solder cap thicknesses on IMCs...
As the electronic packaging density continues to increase, flip chip or stacked packaging via bump bonding is gradually replacing traditional wire bonding and will become the mainstream packaging form in the future. For copper bumps, this new type of electronic interconnection has not yet been fixed by industry standards. Therefore, this paper has made a preliminary study on the reliability of this...
In order to investigate the reliability of micro-interconnecting copper pillar bump under thermal-electric coupling, the test chip with electrified daisy chain copper pillar bumps was designed and manufactured. And 9 sets of thermoelectric coupling accelerated life test were carried out respectively, which the resistance increased by 10% was considered as the failure threshold to get the mean-time-to-failure...
Aluminium is widely used as conductor material for power cables, but corrosion taking place under specific circumstances can have impact on its reliability. Aluminium corrosion under the influence of an alternating current was studied experimentally. Submerged cable segments with inflicted damage exposing the conductors resulted in a continuous corrosion of the conductor material. Effects of temperature...
This paper presents the relations between processing, microstructure and mechanical reliability of copper pillar bumps (CuPi). Two sets of samples were manufactured: Cu/SnAg and Cu/Ni/SnAg with diameters between 15 and 20 µm. From the microstructure point of view: at these dimensions and for simulated reflows, up to 5, intermetallic compounds (IMC) follow a classical power law with a time exponent...
3D multi-layer chip stacking is a significant assembly challenge with dependencies on die size and thickness, interconnect pitch, bump diameter, number of dies involved, and die warpage. The assembly processes used to overcome the technical difficulties associated with the stacking of medium and large logic dies with fine pitch copper pillar bumps is discussed, including mass reflow and thermo-compression...
This work presents the thermal reliability test results of a metaconductor device on a glass substrate. Custom thermal cycling testing between room temperature and 100 °C has been performed for both Cu/Ni and Cu/NiFe metaconductor based transmission lines. The overall electrical performance has been well preserved between 300 kHz and 12 GHz. After a high temperature annealing treatment with 400 °C...
The reliability of copper through-silicon vias (TSVs) has been shown to be largely determined by the microstructure and extrusion statistics, and the mechanism for this requires further investigation. Synchrotron x-ray microdiffraction is an advantageous technique for TSV measurements due to its high beam intensity, which allows for full stress derivation with submicron resolution, and its nondestructive...
To take full advantage of silicon carbide (SiC) devices' superior electrical and thermal performance, advanced power module packaging designs and suitable materials are required. In this paper, the development of a new high power density module using the Power Overlay (POL) packaging platform is presented. The wirebond-less packaging platform has shown significantly reduced electrical parasitics,...
3DIC technology has enabled scaling beyond the Moore's Law to achieve higher transistor count, increased functionality and superior performance. Additionally, this technology allows integrating heterogeneous components such as Processor, FPGA, GPU, Memory, Serdes, etc. on the same interposer die enabling faster computing through reduced latency. The yields on the 3DIC technology have matured and are...
Copper/tin thermo-compression bonding technology has been a focus and hot spot of global research institutions for a long time. Inter-diffusion and intermetallic compound (including the metastable η-phase Cu6Sn5 and the stable ε-phase Cu3Sn) formation will occur at the bonding interface during the heating and pressing step of bonding experiments. Considering that tin is easily oxidized and copper/tin...
Emerging fan-out packages require advances in mold compounds, polymer interfaces to metals and silicon, and innovative processing to reach the required high reliability. In this paper, we discuss the fracture energy for mold compound interface to copper and silicon, and use that information for studying interfacial delamination propagation of mold compound. We have examined mold compound delamination...
The next generation of switches for power electronics is based upon Wide Band Gap semiconductors (WBG), e.g. GaN or SiC. These materials are supporting the possibility of higher switching currents and high frequency applications. Wide band gap semiconductors enable high voltage and high temperature applications. Power electronics need an optimized low inductive commutation cell for reducing the switching...
Reliability analysis is performed for various redistribution layer (RDL) interconnect patterns. Five different RDL patterns are designed to examine die pitch, line length, line width, dummy block, and die edge/corner effects on RDL reliability. Temperature dependent material properties, grain growth induced stress, thermal mismatch stress, and plastic deformation evolution are taken into consideration...
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