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In the past several decades on-chip dimensions have scaled over 2000X, while dimensions on printed circuit board have scaled 4-5X. This modest scaling of packaging dimensions has severely limited system scaling. To address this, we have proposed a disruptive package-free integration scheme. We replace the traditional organic printed circuit board (PCB) with silicon interconnect fabric (SiIF) and replace...
In the existing electronic devises, chip-to-chip and on-chip interconnects are based on copper wires. However, copper interconnects have created problems on the performance and functionality of conventional electronics devices by imposing parasitic load that leads to limit in speed, lower bandwidth, increased power consumption(high heating on the devices) and electromagnetic interferences. On the...
Through Silicon Via (TSV) is the major technology in order to transmit data among various devices in 3D IC. Therefore higher concentration of TSV is required for higher packing density in 3D IC. In order to obtain high density of TSV, the dimensions of TSV needs to be reduced. This may be achieved by increasing the surface area per layer which will benefit in packing of more components for any operation...
With the emerging trends in RF design domain, semiconductor process technology has also evolved to meet the stringent design requirements. Owing to better electromigration resistance, low resistance and dielectric constant, scalability, ability to handle higher current densities and efficient power consumption, copper interconnects have emerged as the widely accepted metallization option to aid silicon...
For a limited solder volume interconnect structure, bump interconnect reliability is more sensitive to the growth behavior of the interfacial intermetallic compounds(IMCs). The study of the effect of solder cap thickness on the interfacial diffusion reaction is of great importance to the application of copper pillar bump. Here, we investigated the effect of different solder cap thicknesses on IMCs...
In this paper, we describe the performance and power benefits of our Fine Pitch integration scheme on a Silicon Interconnect Fabric (Si IF). Here we propose a Simple Universal Parallel intERface (SuperCHIPS) protocol enabled by fine pitch dielet to interconnect fabric assembly. We show the dramatic improvements in bandwidth, latency, and power are achievable through our integration scheme where small...
Flip-chip interconnects made entirely from copper are needed to overcome the intrinsic limits of solder-based interconnects and match the demand for increased current densities. To this end, dip-based all-copper interconnects are a promising approach to form electrical interconnects by sintering copper nanoparticles between the copper pillar and pad. However, the remnant porosity of the copper joint...
The paper will present a continuation of our investigation [1] in implementing a solderless assembly process for electronics. The addressed technology is known as the OCCAM process and was patented by Verdant Industries [2]. We present our proof of feasibility, at least for a prototyping phase on a single connection layer. Different from the original process that employs for the interconnection tracks...
We examine graphene for interconnects within a 7-nm FinFET technology. Multiple scenarios considered alter dimensions and/or materials to reflect realistic graphene interconnect fabrication. Replacement is restricted up to the 3rd BEOL metal layer (M3) as graphene is advantageous over copper in terms of resistivity only for line widths < 30 nm. Initial standard-cell level analysis is extended to...
Microstructure variation with post-patterning dielectric aspect ratio (AR) and post-plating annealing temperature has been investigated in Cu narrow wires. As compared to the conventional annealing at 100 ◦C for a feature AR of 2.6, both elevated temperature anneals and reduced AR structures modulated Cu microstructure, which then resulted in a reduced rate of electrical resistivity increase with...
A model of copper and carbon nanotube (CNT) composite filled through silicon via (TSV) is developed to estimate signal delay of a novel interconnect, employed in 3D integrated circuit (IC) design. The main objective of 3D interconnect is to electrically connect two stacks of circuits and offer robust chip functionalities. The 3D integration scheme allows independent design of operational blocks in...
Co/Cu composite interconnect systems were studied. Since wide Cu lines require a diffusion barrier which is simultaneously applied also to fine Co lines to reduce Co volume fraction, through-Cobalt Self-Formed-Barrier (tCoSFB) was employed to thin down TaN barrier to <1 nm which works as an adhesion layer for Co lines. Line R of fine Co lines was reduced by 30% successfully. The Co/tCoSFB-Cu composite...
Due to the rapid increases in current densities, wires, planar conductors and ground lines, become more and more vulnerable to electromigration. Future RF advanced packaging applications require new materials endowed of low electrical resistance, high reliability, chip-to-package interconnects, and improved thermal management. In this contribution, we introduce a multi-physics full-wave investigation...
Modern power grids use via arrays to connect wires across metal layers. These arrays are susceptible to electromigration (EM), which creates voids under the vias, potentially causing circuit malfunction. We combine the effect of via redundancy with models that characterize the effect of via array geometry on thermomechanical stress, and determine how the choice of via arrays can affect EM-induced...
In this paper the delay occurring in SWCNT bundle interconnect is analysed based on process related parameters and it is also compared to copper wire. The circuit parameters are calculated to develop an equivalent RLC model for both SWCNT and copper considering the practical constraints. This model is used to calculate the delay for local, intermediate and global interconnects by varying the bundle...
In this paper, we propose self-contained built-in-self-test/repair (BIST/R) solutions to improve the reliability of the direct face-to-face copper thermo-compression bonding A dual-mode transceiver is presented to operate either as an ohmic mode when the bonding has low resistance or as a capacitive coupling mode when the bonding is faulty showing high resistance.
Three dimensional integrated package constructions are a very active area of development in the electronics packaging industry. In many of these constructions, creating vertical interconnections between packaging elements presents a particular challenge. This problem is exacerbated as package footprints and pitches become smaller and exacting interconnection height is needed to accommodate nested...
In an industry which demands for continuous innovation and perfection, we are constantly deriving new processes and solutions to break the technological limits which will set us apart. We are striving to achieve denser integrated circuits for better performance as Moore's law perceives and also redefining the word, “Thin”. Driven by cost and in order to achieve thinner IC packages, we have created...
On-chip data movement is a major source of power consumption in modern processors, and future technology nodes will exacerbate this problem. Properly understanding the power that applications expend moving data is vital for inventing mitigation strategies. Previous studies combined data movement energy, which is required to move information across the chip, with data access energy, which is used to...
High resistivity of copper interconnect is bringing on expansive defer and power utilization in the Integrated Circuit at global interconnect length. In this paper we have analyzed the performance of Copper and Carbon Nanotube (CNT) interconnects. CMOS and CNFET device technology is incorporated with Copper (Cu), Single-walled CNT (SWCNT), Multi-Walled CNT (MWCNT), and Mixed CNT Bundle (MCB) interconnect...
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