Search results for: Cem Alper

Items from 1 to 17 out of 17 results

article

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

Cem Alper, Jose Luis Padilla, Pierpaolo Palestri, Adrian M. Ionescu

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 2 - 7

We propose and validate a novel design methodology for logic circuits that exploits the conduction mechanism and the presence of two independently biased gates (“n-gate” and “p-gate”) of the electron-hole bilayer tunnel field-effect transistor (EHBTFET). If the device is designed to conduct only under certain conditions, e.g., when

$V_{\mathrm {n-gate}} = V_{\mathrm {DD}}$

and

$V_{\mathrm {p-gate}} = 0$

...

article

Analysis of the Heterogate Electron–Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

Jose L. Padilla, Cristina Medina-Bailon, Carlos Navarro, Cem Alper, more

IEEE Transactions on Electron Devices > 2018 > 65 > 1 > 339 - 346

Within the research in bilayer tunneling field-effect transistors (TFETs) exploiting interband tunneling phenomena with tunneling directions aligned with gate-induced electric fields, simulation results for the heterogate electron–hole bilayer TFET (HG-EHBTFET) showed that this type of devices succeeded in suppressing the parasitic tunneling leakage currents appearing in EHBTFETs as a result of the...

article

Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs

Cristina Medina-Bailon, Jose L. Padilla, Carlos Sampedro, Cem Alper, more

IEEE Transactions on Electron Devices > 2017 > 64 > 8 > 3084 - 3091

Tunnel FETs (TFETs) are in the way to become an alternative to conventional MOSFETs due to the possibility of achieving low subthreshold swing combined with small OFF current levels, which allows operation at low

$V_{\mathrm {DD}}$

. In this paper, a nonlocal band-to-band tunneling model has been successfully implemented into a multisubband ensemble Monte Carlo (MS-EMC) simulator and applied to ultrascaled...

article

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Arnab Biswas, Gia Vinh Luong, M. Foysol Chowdhury, Cem Alper, more

IEEE Transactions on Electron Devices > 2017 > 64 > 4 > 1441 - 1448

This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both

${I}$

–

${V}$

and

${G}$

–

${V}$

characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear onset of the output characteristics, and the temperature dependence. Experimental calibration on long channel (350 nm) complementary...

chapter

Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET

Cem Alper, Jose L. Padilla, Pierpaolo Palestri, Adrian M. Ionescu

2016 46th European Solid-State Device Research Conference (ESSDERC) > 307 - 310

ESSDERC 2016 - 46th European Solid-State Device Research Conference

We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET) considering different geometries. Through quantum simulations based on the effective mass approximation (EMA), it is found that the fin EHBTFET is affected by the corner effects at the substrate-fin interface, due to reduced electrostatic control that causes a dramatic reduction of the ON current...

article

The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

Cem Alper, Pierpaolo Palestri, Jose Luis Padilla, Adrian M. Ionescu

IEEE Transactions on Electron Devices > 2016 > 63 > 6 > 2603 - 2609

An extensive parameter analysis is performed on the electron–hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrödinger–Poisson solver with corrections for band non-parabolicity considering thin InAs, In_0.53Ga_0.47As, Ge, Si_0.5Ge_0.5, and Si films. It is found that depending on the channel material and channel thickness, the EHBTFET can operate either as a 2-D–2-D or...

article

Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations

Jose L. Padilla, Cem Alper, Francisco Gamiz, Adrian Mihai Ionescu

IEEE Transactions on Electron Devices > 2016 > 63 > 6 > 2570 - 2576

Switching behavior in electron–hole bilayer tunnel FETs is known to be unaffected by the subthreshold swing limitation of 60 mV/decade imposed by thermal injection, due to the band-to-band tunneling phenomena on which they rely. However, in this paper, we show that, once parasitic lateral tunneling processes are suppressed by means of heterogate configurations, a new physical limitation arises at...

article

Quantum Mechanical Confinement in the Fin Electron–Hole Bilayer Tunnel Field-Effect Transistor

Jose L. Padilla, Cem Alper, Francisco Gamiz, Adrian Mihai Ionescu

IEEE Transactions on Electron Devices > 2016 > 63 > 8 > 3320 - 3326

Quantum mechanical confinement in electron–hole bilayer tunnel field-effect transistors (EHBTFETs) affects in a substantial way the band-to-band tunneling (BTBT) mechanism that constitutes their operating principle. Field-induced quantization is known to set off effective bandgap widening phenomena—with the subsequent BTBT probability reduction that it entails—and to give rise to harmful parasitic...

chapter

Modeling the imaginary branch in III–V tunneling devices: Effective mass vs k · p

Cem Alper, Michele Visciarelli, Pierpaolo Palestri, Jose L. Padilla, more

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) > 273 - 276

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the...

chapter

Efficient quantum mechanical simulation of band-to-band tunneling

Cem Alper, Pierpaolo Palestri, Jose L. Padilla, Antonio Gnudi, more

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon > 141 - 144

2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation. Comparison against more advanced full-quantum simulators based on TB and k ·p Hamiltonians is presented as well and indicates very...

chapter

Electron-hole bilayer deep subthermal electronic switch: Physics, promise and challenges

Adrian M. Ionescu, Cem Alper, Jose L. Padilla, Livio Lattanzio, more

2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) > 1 - 3

2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

This paper overviews the physics and promised performance of electron hole bilayer TFETs (EHBTFET) as deep subthermal electronic switch for ultra-low voltage operation. We provide a first complete roadmap for optimizing its design for combined high performance and low leakage. Based on advanced quantum mechanical (QM) simulation methods, it is shown that the major issue with the EHBTFET is the wavefunction...

chapter

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

Cem Alper, Pierpaolo Palestri, Livio Lattanzio, Jose L. Padilla, more

2014 44th European Solid State Device Research Conference (ESSDERC) > 186 - 189

ESSDERC 2014 - 44th European Solid State Device Research Conference

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of Schrödinger-Poisson system, using the Finite Element Method. The quantum mechanical model includes direct as well as phonon-assisted transitions and it is applied to Germanium electron-hole bilayer tunnel FETs (EHBTFET). It is found that 2D direct tunneling through the underlap regions may degrade the subthreshold...

chapter

Compact modeling of homojunction tunnel FETs

Arnab Biswas, Nilay Dagtekin, Cem Alper, Luca De Michielis, more

2014 Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES) > 54 - 57

2014 MIXDES - 21st International Conference "Mixed Design of Integrated Circuits & Systems"

Aggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supply voltage reduction, and the rising leakage currents that directly affect the switching ratio between the ON and OFF states. At present, the available...

chapter

Conformal mapping based DC current model for double gate tunnel FETs

Arnab Biswas, Luca De Michielis, Cem Alper, Adrian M. Ionescu

2014 15th International Conference on Ultimate Integration on Silicon (ULIS) > 85 - 88

2014 15th International Conference on Ultimate Integration on Silicon (ULIS)

In this work, the conformal mapping technique is applied to obtain an analytical closed form solution of the 2D Poisson's equation for a double-gate Tunnel FET. The generated band profiles are accurate in all regions of device operation. Furthermore, the current levels are estimated by implementing the non-local band-to-band tunneling model from Synopsys Sentaurus TCAD. A good agreement with simulations...

article

Quantum Mechanical Study of the Germanium Electron–Hole Bilayer Tunnel FET

Cem Alper, Livio Lattanzio, Luca De Michielis, Pierpaolo Palestri, more

IEEE Transactions on Electron Devices > 2013 > 60 > 9 > 2754 - 2760

The electron–hole bilayer tunnel field-effect transistor (EHBTFET) is an electronic switch that uses 2-D-2-D sub-band-to-sub-band tunneling (BTBT) between electron and hole inversion layers and shows significant subthermal swing over several decades of current due to the step-like 2-D density of states behavior. In this paper, EHBTFET has been simulated using a quantum mechanical model. The model...

chapter

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Cem Alper, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, more

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) > 161 - 164

ESSDERC 2012 - 42nd European Solid State Device Research Conference

We propose and report the significant improvement obtained by a non-uniform gate capacitance made by appropriate combination of high-k and low-k regions over the tunneling and the channel regions of a heterostucture TFET (called HKLKT-FET). In addition to significantly enhanced I_ON and subthreshold swing, we find that this structure offers great improvements for the dynamic switching energy (66% saving)...

chapter

New tunnel-FET architecture with enhanced I_ON and improved Miller Effect for energy efficient switching

Arnab Biswas, Cem Alper, Luca De Michielis, Adrian M. Ionescu

70th Device Research Conference > 131 - 132

2012 70th Annual Device Research Conference (DRC)

Tunneling Field Effect Transistors (TFET) are promising devices to respond to the demanding requirements of future technology nodes. The benefits of the TFETs are linked to their sub-60mV/decade sub-threshold swing, a prerequisite for scaling the supply voltage well below 1V. Main research efforts are currently dedicated to improving the on current (I_ON) level in a TFET. However, from the circuit...

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Keywords

TUNNELING (9)
LOGIC GATES (7)
TFETS (7)
BAND-TO-BAND TUNNELING (BTBT) (6)
CHARGE CARRIER PROCESSES (6)
MATHEMATICAL MODEL (4)
QUANTUM CONFINEMENT (4)
QUANTUM MECHANICAL SIMULATION (4)
SWITCHES (4)
EFFECTIVE MASS (3)
GERMANIUM (3)
TUNNEL FIELD-EFFECT TRANSISTOR (TFET) (3)
2-D-2-D TUNNELING (2)
2D-2D TUNNELING (2)
BAND-TO-BAND TUNNELING (2)
DENSITY OF STATES (DOS) (2)
DOPING (2)
EHBTFET (2)
QUANTIZATION (SIGNAL) (2)
ANALOG CIRCUITS (1)
ASYMMETRIC LAYOUTS (1)
BENCHMARK TESTING (1)
BENCHMARKING (1)
BIOLOGICAL SYSTEM MODELING (1)
COMPACT MODEL (1)
COMPACT MODELNG (1)
DENSITY OF STATES (1)
DISPERSION (1)
ELECTRON–HOLE BILAYER TUNNEL FIELD-EFFECT TRANSISTOR (EHBTFET) (1)
ELECTRON-HOLE BILAYER TUNNEL FET (EHBTFET) (1)
FIELD EFFECT TRANSISTORS (1)
FIN ELECTRON–HOLE BILAYER TUNNEL FIELD-EFFECT TRANSISTOR (EHBTFET) (1)
GEOMETRY EFFECTS (1)
HETEROGATE ELECTRON-HOLE BILAYER TUNNEL FET (HG-EHBTFET) (1)
HETEROGATE ELECTRON–HOLE BILAYER TUNNELING FIELD-EFFECT TRANSISTOR (HG-EHBTFET) (1)
INTEGRATED CIRCUIT MODELING (1)
INVERSION LAYERS (1)
INVERTERS (1)
LOGIC CIRCUITS (1)
LOW LEAKAGE (1)
MONTE CARLO METHODS (1)
MOSFET (1)
MULTISUBBAND ENSEMBLE MONTE CARLO (MS-EMC) (1)
NUMERICAL MODELS (1)
OCCUPANCY PROBABILITIES (1)
PHOTONIC BAND GAP (1)
QUANTUM MECHANICAL (QM) SIMULATION (1)
RADIO FREQUENCY (1)
SEMICONDUCTOR DEVICE MODELING (1)
SILICON (1)
SMOOTHING METHODS (1)
STEEP SLOPE TRANSISTORS (1)
STRAINED-SI (SSI) NANOWIRE (NW) TUNNEL FET (TFET) (1)
SUBSTRATES (1)
SUBTHERMAL ELECTRONIC SWITCH (1)
SUBTHRESHOLD SLOPE (1)
SWITCHING BEHAVIOR. (1)
TEMPERATURE DEPENDENCE (1)
TFET (1)
TRAJECTORY (1)
TRANSCONDUCTANCE (1)
TUNELL FET (1)
TUNNEL FETS (TFET) (1)
TUNNEL FIELD-EFFECT TRANSISTOR (TFET). (1)
VERLOG-A (1)
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Search results for: Cem Alper

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